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4 Sep 2000

Volume 77, Issue 10, pp. 1413-1560

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Dielectric enhancement and Maxwell–Wagner effects in ferroelectric superlattice structures

D. O’Neill, R. M. Bowman, and J. M. Gregg

Appl. Phys. Lett. 77, 1520 (2000); http://dx.doi.org/10.1063/1.1290691 (3 pages) | Cited 85 times

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In an attempt to reproduce the functional properties associated with relaxor electroceramics, pulsed laser deposition has been used to fabricate thin-film capacitor structures in which the dielectric layer is composed of a superlattice of Ba0.8Sr0.2TiO3 and Ba0.2Sr0.8TiO3. The properties of the capacitors were investigated as a function of superlattice periodicity. The dielectric constant was significantly enhanced at stacking periodicities of a few unit cells, consistent with relaxor behavior. However, enhancement in dielectric constant was generally associated with high dielectric loss. Analysis of the imaginary permittivity as a function of frequency shows that fine-scale superlattices conform to Maxwell–Wagner behavior. This suggests that the observed enhancement of the real part of the dielectric constant is an artifact produced by carrier migration to interfaces within the dielectric. A comparison of this data with that already published on dielectric superlattices suggests that previous claims of an enhancement in dielectric constant may also be attributed to the Maxwell–Wagner effect. © 2000 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Fg Pulsed laser ablation deposition
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)

Structural and dielectric properties of epitaxial Ba1−xSrxTiO3/Bi4Ti3O12/ZrO2 heterostructures grown on silicon

C. L. Canedy, S. Aggarwal, Hao Li, T. Venkatesan, R. Ramesh, F. W. Van Keuls, R. R. Romanofsky, and F. A. Miranda

Appl. Phys. Lett. 77, 1523 (2000); http://dx.doi.org/10.1063/1.1290724 (3 pages) | Cited 18 times

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We report on the dielectric properties of an epitaxial heterostructure comprised of Ba1−xSrxTiO3, Bi4Ti3O12, and (ZrO2)0.91(Y2O3)0.09 grown on silicon substrates for potential use in microwave devices. Careful x-ray analysis indicates crystallographic alignment of all layers and transmission electron microscopy and Auger analysis reveals high quality epitaxy with minimal interdiffusion. The viability of using such heterostructures in actual microwave devices was assessed by incorporating the films in a coupled microstripline phase shifter design. The phase shifter devices, operating in the Ku band, had losses of less than 4 dB with a maximum phase shift of nearly 40° at 40 V. We compare this performance with a (Ba, Sr)TIO3/MgO phase shifter. These results presented represent significant progress towards integrating ferroelectric films with conventional silicon technology. © 2000 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.55.-a Thin film structure and morphology
84.40.Az Waveguides, transmission lines, striplines
81.15.Fg Pulsed laser ablation deposition

Study of the electronic conduction mechanism in Nb-doped SrTiO3 thin films with Ir and Pt electrodes

Sundararaman Gopalan, Venkat Balu, Jian-Hung Lee, Jeong Hee-Han, and Jack C. Lee

Appl. Phys. Lett. 77, 1526 (2000); http://dx.doi.org/10.1063/1.1308274 (3 pages) | Cited 11 times

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Strontium titanate (ST) is an attractive material for dynamic random access memory applications. Doping ST with other elements such as Nb has been shown to reduce problems such as frequency dispersion and resistance degradation associated with this material. In this report, we study the electronic conduction mechanism in Nb-doped ST films [Sr(Ti1−xNbxO3)] with Ir and Pt electrodes. Film thicknesses were of the order of 35–40 nm. It was found that the “true” leakage current satisfied both Schottky and Frenkel–Poole conduction mechanism equations for both positive and negative polarities. The effect of Nb content (x = 0, 0.001, 0.01, and 0.05) on the barrier heights using both the mechanisms were determined. It was found that the barrier height decreased with increased Nb content, which was correlated with the increase in leakage current. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
73.40.Rw Metal-insulator-metal structures
77.55.-g Dielectric thin films
73.50.Fq High-field and nonlinear effects
73.30.+y Surface double layers, Schottky barriers, and work functions

Direct observations of electric field-induced domain boundary cracking in 〈001〉 oriented piezoelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystal

X. Tan, Z. Xu, J. K. Shang, and P. Han

Appl. Phys. Lett. 77, 1529 (2000); http://dx.doi.org/10.1063/1.1308060 (3 pages) | Cited 37 times

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In situ transmission electron microscopy study of electric field-induced cracking has been conducted on 〈001〉 oriented 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 crystal. Fracture of the 90° domain boundary was directly observed in the tetragonal area under both static and alternating electric fields. The field strength required to induce domain boundary cracking was lower for alternating electric field than for static field. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.-j Piezoelectricity and electromechanical effects
77.80.Dj Domain structure; hysteresis
62.20.M- Structural failure of materials

Thickness dependence of stress in lead titanate thin films deposited on Pt-coated Si

Desheng Fu, Takeshi Ogawa, Hisao Suzuki, and Kenji Ishikawa

Appl. Phys. Lett. 77, 1532 (2000); http://dx.doi.org/10.1063/1.1308061 (3 pages) | Cited 28 times

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Thickness dependence of the soft mode E(1TO) of tetraganol lead titanate thin film, deposited on Pt-coated Si by a chemical solution deposition, was determined with Raman scattering measurements. A downshift of the soft mode was attributed to the residual stress in the thin film, which was estimated in the range of 1.3–2.6 GPa, corresponding to film thickness of 400–50 nm. The variation of the clamped dielectric constants determined by observed mode frequencies was found to agree with the prediction of stress dependence of dielectric constants by Devonshire theory. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.60.Bs Mechanical and acoustical properties
77.55.-g Dielectric thin films
78.30.Hv Other nonmetallic inorganics
63.70.+h Statistical mechanics of lattice vibrations and displacive phase transitions
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.22.Ch Permittivity (dielectric function)
78.66.Nk Insulators

Orientation dependence of the ferroelectric and piezoelectric behavior of Ba(Ti1−xZrx)O3 single crystals

Zhi Yu, Ruyan Guo, and A. S. Bhalla

Appl. Phys. Lett. 77, 1535 (2000); http://dx.doi.org/10.1063/1.1308276 (3 pages) | Cited 58 times

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The dielectric properties, ferroelectric polarization, and piezoelectric strain behavior of Ba(Ti1−xZrx)O3 (x = 0.05 and 0.08) single crystals are studied for different crystal orientations. The study of dielectric properties suggests that the three phase transitions in BaTiO3 are pinched by substituting Ti with Zr but the anisotropic dielectric behavior is present in crystals of various orientations. The remnant polarization and strain behavior are also studied for different crystal directions. Higher strain and lower polarization are obtained along the pseudocubic 〈001〉 direction compared to those observed along the 〈110〉 and 〈111〉 directions in both orthorhombic (x = 0.05) and rhombohedral (x = 0.08) phase. The results for the 〈001〉 oriented orthorhombic crystals with x = 0.05 indicate the highest strain level (∼0.25%) with almost hysteresis-free behavior and high piezoelectric coefficient (d33 = 500 pC/N). © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
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