APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

4 Sep 2000

Volume 77, Issue 10, pp. 1413-1560

Return to All Sections
back to top
RSS Feeds

Probing the near fields of the super-resolution near-field optical structure

Din Ping Tsai and Wei Chih Lin

Appl. Phys. Lett. 77, 1413 (2000); http://dx.doi.org/10.1063/1.1290692 (3 pages) | Cited 36 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Super-resolution near-field structure, glass/SiN (170 nm)/Sb (15 nm)/SiN (20 nm), a promising structure for near-field ultrahigh-density optical data storage, has been studied by a tapping-mode tuning-fork near-field scanning optical microscope in transmission mode. Both propagating and evanescent field intensities were found at the focused spots of the surface of the super-resolution near-field structure. Images of the near-field intensity gradients at different excited laser powers (0.42–2.43 μW) showed that the area of the static evanescent intensity could be stably controlled. The enhancement of the near-field intensity, and the reduction of the focused spot through the super-resolution near-field structure, glass/SiN (170 nm)/Sb (15 nm)/SiN (20 nm) have been observed. © 2000 American Institute of Physics.
Show PACS
42.70.Ce Glasses, quartz
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
42.79.Vb Optical storage systems, optical disks
42.79.Wc Optical coatings
42.65.-k Nonlinear optics

Electroluminescence from semitransparent Au film/nanometer SiO2/nanometer Si/nanometer SiO2/n+–Si structure under reverse bias

C. L. Heng, Y. K. Sun, S. T. Wang, Y. Chen, Y. P. Qiao, B. R. Zhang, Z. C. Ma, W. H. Zong, and G. G. Qin

Appl. Phys. Lett. 77, 1416 (2000); http://dx.doi.org/10.1063/1.1290597 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nanometer SiO2/nanometer Si/nanometer SiO2 double-barrier (DB) structures, with Si layers having eleven different thicknesses from 2 to 4 nm, were deposited on n+–Si substrates using the magnetron sputtering technique. Strong electroluminescence (EL) from semitransparent Au film/DB/n+–Si structure was observed under reverse bias in a range of about 5–7 V. It is found that every EL spectrum of the structure can be decomposed into two Gaussian bands with peaks at around 1.85 and 2.25 eV, and their intensities and current swing synchronously with increasing nanometer Si layer thickness; the periodic length of swing is consistent with half of the de Broglie wavelength of the carriers. A comparison was carried out between EL from the Au/DB/n+–Si structure under reverse bias and that from the Au/DB/p–Si structure under forward bias reported previously. © 2000 American Institute of Physics.
Show PACS
78.60.Fi Electroluminescence
78.66.Bz Metals and metallic alloys

Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers

F. Klopf, J. P. Reithmaier, and A. Forchel

Appl. Phys. Lett. 77, 1419 (2000); http://dx.doi.org/10.1063/1.1290601 (3 pages) | Cited 28 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Highly efficient 980 nm GaInAs/(Al)GaAs quantum-dot (QD) and quantum-well (QW) lasers based on a single active layer have been fabricated and compared in view of high-power applications. QD lasers show a significantly reduced temperature shift of the emission wavelength and achieve external quantum efficiencies of 80% (>1 W/A for 1-mm-long devices). For longer cavity lengths (>2.5 mm), QD lasers show lower threshold current densities than QW lasers. Threshold current densities as low as 54 A/cm2 are reached. © 2000 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Monolithic photorefractive molecule with excellent transparency in the visible region

Jiwon Sohn, Jaehoon Hwang, Soo Young Park, Jin-Kyung Lee, Jai-Hyung Lee, Joon-Sung Chang, Geon Joon Lee, Bo Zhang, and Qihuang Gong

Appl. Phys. Lett. 77, 1422 (2000); http://dx.doi.org/10.1063/1.1290727 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
9-(2-Ethyl-hexyl)-3-[2-(4-methanesulfonyl-phenyl)vinyl]-9H-carbazole (EHCS) was synthesized as a monolithic photorefractive molecule forming low Tg( ∼ 25 °C) organic glass. It showed distinct photoconductivity due to the carbazole moiety and the optical nonlinearity by the push–pull structure. The EHCS glass showed excellent optical quality and great stability as the ethylhexyl group effectively suppressed the crystallization in the films. Also, the extremely simple structure of EHCS contributed to a very high chromophore concentration. This single-component photorefractive glass of EHCS showed large net gain (56.3 cm−1) and diffraction efficiency (12%). Photorefractivity of EHCS glass was greatly improved by doping with a small amount (<1%) of 2,4,7-trinitrofluorenone (TNF). The two-beam coupling gain of samples with TNF was 113 cm−1 and the diffraction efficiency was 29%. © 2000 American Institute of Physics.
Show PACS
42.70.Ln Holographic recording materials; optical storage media
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.Jk Polymers and organics
42.70.Ce Glasses, quartz
72.40.+w Photoconduction and photovoltaic effects
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.66.Qn Polymers; organic compounds

Effect of grain boundaries on carrier lifetime in chemical-vapor-deposited diamond film

Hitoki Yoneda, Kazutatsu Tokuyama, Riichi Yamazaki, Ken-ichi Ueda, Hironori Yamamoto, and Kazuhiro Baba

Appl. Phys. Lett. 77, 1425 (2000); http://dx.doi.org/10.1063/1.1308054 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Using the reflective measurements, the effect of grain boundaries on the lifetime of photogenerated carriers was investigated for chemical-vapor-deposited (CVD) diamond films. To investigate the effect of grain boundaries on the carrier dynamics, photons having energy lower than the band gap energy of a single crystal of diamond were used for pumping. For a 4.8 eV photon, the measured lifetime was several tens of picoseconds, and that was consistent with photoconductive current measurements. However, a dramatic decrease of the carrier lifetime was observed in the case of 3.2 eV irradiation. The variation of the lifetime inside the single grain was measured by a microscopic pump–probe method. The carrier lifetime near the grain boundary decreased from 5 to 8 ps at the center to 0.35–0.5 ps. This decreased lifetime and the carrier generation efficiency with lower energy photon had a negative correlation. To explain this mechanism, we considered the decrease in lifetime to be related to the density of the imperfection or mid-band gap states inside the single-CVD-polycrystalline grain. © 2000 American Institute of Physics.
Show PACS
73.61.Cw Elemental semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.72.Mm Grain and twin boundaries
73.50.Pz Photoconduction and photovoltaic effects

How a quantum-dot laser turns on

Marius Grundmann

Appl. Phys. Lett. 77, 1428 (2000); http://dx.doi.org/10.1063/1.1290716 (3 pages) | Cited 16 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The turn-on dynamics of quantum-dot lasers is modeled theoretically. The impact of the—so far technologically inevitable—inhomogeneous broadening σ, the homogeneous broadening Γ, and the interlevel relaxation time on the relaxation oscillations (ROs) is investigated. When the inhomogeneous broadening is dominant (Γ≪σ), the individual nanostructures in the ensemble exhibit independent ROs. In the case of significant homogeneous (Γ ≥ σ) broadening, the quantum-dot ensemble exhibits collective, synchronized ROs, leading to a stronger intensity modulation and a larger turn-on delay. © 2000 American Institute of Physics.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Rn Relaxation oscillations and long pulse operation
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close