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11 Sep 2000

Volume 77, Issue 11, pp. 1569-1731

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Dielectric properties in heteroepitaxial Ba0.6Sr0.4TiO3 thin films: Effect of internal stresses and dislocation-type defects

C. L. Canedy, Hao Li, S. P. Alpay, L. Salamanca-Riba, A. L. Roytburd, and R. Ramesh

Appl. Phys. Lett. 77, 1695 (2000); http://dx.doi.org/10.1063/1.1308531 (3 pages) | Cited 144 times

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A series of heteroepitaxial Ba0.6Sr0.4TiO3 were grown on 0.29(LaAlO3):0.35(Sr2TaAlO6) substrates using pulsed-laser deposition. X-ray characterization revealed compressive in-plane stresses in the thinnest films, which were relaxed in a continuous fashion with increasing thickness. A theoretical treatment of the misfit strain was in good agreement with the measured out-of-plane lattice parameter. The low-frequency dielectric constant was measured to be significantly less than the bulk value and found to decrease rapidly for films less than 100 nm. A thermodynamic model was developed to understand the reduction in dielectric constant. By observing the microstructure using plan-view and cross-section transmission electron microscopy, we identified local strain associated with a threading dislocation density on the order of 1011 cm−2 as a possible mechanism for dielectric degradation in these films. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.22.Ch Permittivity (dielectric function)
77.80.-e Ferroelectricity and antiferroelectricity
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.60.Bs Mechanical and acoustical properties

Large strain electrostrictive actuation in barium titanate

E. Burcsu, G. Ravichandran, and K. Bhattacharya

Appl. Phys. Lett. 77, 1698 (2000); http://dx.doi.org/10.1063/1.1308533 (3 pages) | Cited 59 times

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Large strain electrostriction in single-crystal ferroelectric materials is investigated. The mode of electrostriction is based on a combined electromechanical loading used to induce cyclic, 90° domain switching. Experiments have been performed on crystals of barium titanate with constant compressive stress and oscillating electric-field input. Induced strains of more than 0.8% have been measured. Strains as large as 5% are predicted for other materials of the same class. The results demonstrate a possible avenue for obtaining large actuation strains in electromechanical devices. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
77.65.Bn Piezoelectric and electrostrictive constants
85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Piezoelectric response of epitaxial Pb(Zr0.2Ti0.8)O3 films measured by scanning tunneling microscopy

O. Kuffer, I. Maggio-Aprile, J.-M. Triscone, Ø. Fischer, and Ch. Renner

Appl. Phys. Lett. 77, 1701 (2000); http://dx.doi.org/10.1063/1.1309017 (3 pages) | Cited 20 times

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We report on scanning tunneling microscopy measurements of the piezoelectric response in ferroelectric heterostructures grown by off-axis rf magnetron sputtering. The samples are composed of a single-crystalline ferroelectric film of Pb(Zr0.2Ti0.8)O3 deposited on a conducting substrate and covered with an ultrathin metallic film of gold. The high quality of the c-axis oriented ferroelectric layer is evidenced by sharp polarization hysteresis loops. By applying a voltage to the bilayer and recording the inverse piezoelectric effect with the scanning tunneling microscope, we demonstrate the ability to measure the phase response as well as the ferroelectric switching. We obtained strain-field plots with a butterfly loop shape, and a quantitative measurement of the longitudinal piezoelectric coefficient (d33). © 2000 American Institute of Physics.
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77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.65.Bn Piezoelectric and electrostrictive constants
68.55.-a Thin film structure and morphology
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application

Wen-Jie Qi, Renee Nieh, Easwar Dharmarajan, Byoung Hun Lee, Yongjoo Jeon, Laegu Kang, Katsunori Onishi, and Jack C. Lee

Appl. Phys. Lett. 77, 1704 (2000); http://dx.doi.org/10.1063/1.1308535 (3 pages) | Cited 54 times

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Zirconium silicate (ZrSixOy) films have been sputtered by comagnetron-reactive sputtering. The composition of ZrSixOy has been controlled by adjusting the sputtering powers of Si and Zr targets to achieve various effective dielectric constants. The sputtered silicate layers showed low equivalent oxide thickness of 14.5 Å with a low leakage of 3.3×10−3 A/cm2 at −1.5 V relative to flat band voltage. The silicate films also exhibited good high-temperature stability and smooth interfacial properties on silicon substrate. © 2000 American Institute of Physics.
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81.15.Cd Deposition by sputtering
68.60.Dv Thermal stability; thermal effects
77.22.Ch Permittivity (dielectric function)
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Anomalies in the temperature dependence of the microwave dielectric properties of Ba6−xSm8+2x/3Ti18O54

Anatolii G. Belous, Oleg V. Ovchar, Matjaz Valant, and Danilo Suvorov

Appl. Phys. Lett. 77, 1707 (2000); http://dx.doi.org/10.1063/1.1309024 (3 pages) | Cited 7 times

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Measurements of the microwave dielectric properties of Ba6−xSm8+2x/3Ti18O54 solid solutions revealed the existence of a broad maximum in the temperature dependence of the permittivity as well as the dielectric loss. Submillimeter-wave frequency measurements confirmed the intrinsic origin of the observed anomaly, which could possibly be ascribed to phase transition with unknown nature in the Ba6−xSm8+2x/3Ti18O54 solid solution. The temperature of the anomaly, which is in the range of 90–120 °C, depends on composition of Ba6−xSm8+2x/3Ti18O54 and decreases with an increase in x. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
84.40.-x Radiowave and microwave (including millimeter wave) technology
64.70.K- Solid-solid transitions

Piezoelectric properties and poling effect of Pb(Zr, Ti)O3 thick films prepared for microactuators by aerosol deposition

J. Akedo and M. Lebedev

Appl. Phys. Lett. 77, 1710 (2000); http://dx.doi.org/10.1063/1.1309029 (3 pages) | Cited 60 times

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See Also: Erratum

Show Abstract
Crack-free [Pb(Zr0.52, Ti0.48)O3] (PZT) films with more than 10 μm thickness as the piezoelectric material, were formed on stainless-steel (SUS304) and Pt/Ti/SiO2/Si substrates by aerosol deposition and then annealed at 600 °C in air. The deposition rate was 20 μm/min in an area of 5×5 mm2. To estimate the piezoelectric and mechanical properties of PZT films, a unimorph structured PZT and a free-standing cantilever were fabricated. The Young’s modulus (Y11) of the PZT film was 80 GPa. Poling at 40 kV/cm, 250 °C for 20 min increased the properties by a factor of 4.0–5.5, resulting in the piezoelectric coefficient (−d31) varying from 80 to 180 pm/V. © 2000 American Institute of Physics.
Show PACS
77.65.-j Piezoelectricity and electromechanical effects
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.60.Bs Mechanical and acoustical properties
07.10.Cm Micromechanical devices and systems
68.55.-a Thin film structure and morphology
77.22.Ej Polarization and depolarization

Effect of electron irradiation on poly(vinylidene fluoride-trifluoroethylene) copolymers

Yiwen Tang, Xing-Zhong Zhao, Helen L. W. Chan, and C. L. Choy

Appl. Phys. Lett. 77, 1713 (2000); http://dx.doi.org/10.1063/1.1290266 (3 pages) | Cited 16 times

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Electrical field-induced strain response of electron-irradiated poly(vinylidene fluoride-trifluoroethylene) copolymer has been studied by a Mach–Zehnder type heterodyne interferometer in the frequency range of 3–9 kHz. The electrostrictive constant is calculated from the strain results, which is of the same order of magnitude as those obtained at 1 Hz by a bimorph-based strain sensor but at much lower electrical field. Changes in the dielectric property, phase transition behavior and crystal structure of the same copolymer have also been studied. The reversible solid–state transition between the polar and nonpolar phase in the crystalline regions of the copolymer driven by the external electric field is suggested to be responsible for the significant high electrostrictive strain of the electron-irradiated copolymer. © 2000 American Institute of Physics.
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61.82.Pv Polymers, organic compounds
61.80.Fe Electron and positron radiation effects
77.84.Jd Polymers; organic compounds
77.65.Bn Piezoelectric and electrostrictive constants
61.41.+e Polymers, elastomers, and plastics
64.70.K- Solid-solid transitions
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