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11 Sep 2000

Volume 77, Issue 11, pp. 1569-1731

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Low-resistance Ti/Au ohmic contacts to Al-doped ZnO layers

Han-Ki Kim, Sang-Heon Han, Tae-Yeon Seong, and Won-Kook Choi

Appl. Phys. Lett. 77, 1647 (2000); http://dx.doi.org/10.1063/1.1308527 (3 pages) | Cited 65 times

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We report on low-resistance ohmic contacts to the moderately doped n-type ZnO:Al(nd = 2×1017 cm−3) obtained using Ti (30 nm)/Au (50 nm) metallization schemes. Annealed Ti/Au contacts exhibit linear current–voltage characteristics, showing that high-quality ohmic contacts are formed. The Ti/Au scheme produces a specific contact resistance of 2×10−4 Ω cm2 when annealed at 300 °C for 1 min in a N2 atmosphere. © 2000 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
85.40.Ls Metallization, contacts, interconnects; device isolation

Nitrogen dependence of the GaAsN interband critical points E1 and E1+Δ1 determined by spectroscopic ellipsometry

G. Leibiger, V. Gottschalch, B. Rheinländer, J. Šik, and M. Schubert

Appl. Phys. Lett. 77, 1650 (2000); http://dx.doi.org/10.1063/1.1309021 (3 pages) | Cited 27 times

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The effects of the nitrogen concentrations on the E1 and E1+Δ1 transitions of tensile-strained GaAs1−yNy (0.1% ⩽ y ⩽ 3.7%) grown pseudomorphically to GaAs by metalorganic vapor-phase epitaxy are studied by spectroscopic ellipsometry. Adachi’s critical-point composite model is employed for ellipsometry data analysis. Contrary to the well-known redshift of the band-gap energy E0, we observe linearly blueshifted E1 and E1+Δ1 transition energies with increasing nitrogen composition y. For nitrogen compositions of 0 ⩽ y ⩽ 1.65%, the observed blueshift of the E1 energy is well explained by the sum of the effects of biaxial (001) strain and alloying. © 2000 American Institute of Physics.
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71.20.Nr Semiconductor compounds
07.60.Fs Polarimeters and ellipsometers
78.66.Fd III-V semiconductors

Si/SiGe electron resonant tunneling diodes

D. J. Paul, P. See, I. V. Zozoulenko, K.-F. Berggren, B. Kabius, B. Holländer, and S. Mantl

Appl. Phys. Lett. 77, 1653 (2000); http://dx.doi.org/10.1063/1.1309020 (3 pages) | Cited 22 times

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Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.8Ge0.2 n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm2 with peak-to-valley current ratios of 1.1 have been achieved. Theoretical modeling of the structure demonstrates that the major current peak results from the tunneling of light-mass electrons from the relaxed substrate and not from the heavy-mass electrons in the emitter accumulation layer. © 2000 American Institute of Physics.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling
73.50.Fq High-field and nonlinear effects

SiGe heterojunction vertical p-type metal–oxide–semiconductor field-effect transistors with Si cap

Xiangdong Chen, Qiqing Ouyang, David M. Onsongo, Sankaran Kartik Jayanarayanan, Al Tasch, and Sanjay Banerjee

Appl. Phys. Lett. 77, 1656 (2000); http://dx.doi.org/10.1063/1.1309018 (3 pages) | Cited 2 times

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SiGe source heterojunction p-type metal–oxide–semiconductor field-effect transistors (p-MOSFETs) have been used before to suppress the short channel effect for sub-100 nm devices. While the leakage is reduced, the drive current is also reduced due to the heterojunction. In this letter, we discuss a SiGe source heterojunction vertical p-MOSFET with a few nanometers thick Si cap. With this device structure, the absence of the heterojunction-induced potential barrier right below the oxide interface improves the drive current substantially while the drain induced barrier lowering (DIBL) effect and floating body effect are still suppressed. The electrical characterization of the device shows it exhibits higher drive current and less DIBL compared with a Si control device. © 2000 American Institute of Physics.
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85.30.Tv Field effect devices
81.05.Hd Other semiconductors

Control of the residual doping of InAs/(GaIn)Sb infrared superlattices

L. Bürkle, F. Fuchs, J. Schmitz, and W. Pletschen

Appl. Phys. Lett. 77, 1659 (2000); http://dx.doi.org/10.1063/1.1310167 (3 pages) | Cited 21 times

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Magnetotransport and photoluminescence (PL) measurements on InAs/(GaIn)Sb superlattices (SLs) grown by molecular-beam epitaxy on GaSb substrates at different substrate temperatures are reported. With increasing growth temperature, a transition of the SLs from residual n type to residual p-type doping was observed. For n-type samples, a decrease in the electron concentration leads to a strong increase in the PL intensity. In contrast, the PL intensity of p-type samples is only weakly dependent on the hole concentration. This correlation can be used to control the residual doping of the SLs. © 2000 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.uj III-V and II-VI semiconductors
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions

S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, and K. Eisenbeiser

Appl. Phys. Lett. 77, 1662 (2000); http://dx.doi.org/10.1063/1.1310209 (3 pages) | Cited 92 times

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We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO3/Si(001) interfaces, as prepared by molecular-beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at the valence band edge. In addition, band bending is much larger at the p-Si heterojunction than at the n-type heterojunction. Previously published threshold voltage behavior for these interfaces can now be understood in light of the present results. © 2000 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
79.60.Jv Interfaces; heterostructures; nanostructures
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Controlled oxide removal for the preparation of damage-free InAs(110) surfaces

T. D. Veal and C. F. McConville

Appl. Phys. Lett. 77, 1665 (2000); http://dx.doi.org/10.1063/1.1310211 (3 pages) | Cited 8 times

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Controlled oxide removal from InAs(110) surfaces using atomic hydrogen (H∗) has been achieved by monitoring the contaminant vibrational modes with high resolution electron energy loss spectroscopy (HREELS). The contributing oxide vibrational modes of the partially H∗ cleaned surface have been identified. Following hydrocarbon desorption during preliminary annealing at 360 °C, exposure to atomic hydrogen at 400 °C initially removes the arsenic oxides and indium suboxides; complete indium oxide removal requires significantly higher hydrogen doses. After a total molecular hydrogen dose of 120 kL, a clean, ordered surface, exhibiting a sharp (1×1) pattern, was confirmed by low energy electron diffraction and x-ray photoelectron spectroscopy. Energy dependent HREELS studies of the near-surface electronic structure indicate that no residual electronic damage or dopant passivation results from the cleaning process. © 2000 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.35.Ja Surface and interface dynamics and vibrations
79.20.Kz Other electron-impact emission phenomena
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.20.At Surface states, band structure, electron density of states

Light-induced conductance resonance in ultrasmall Si nanoparticles

Joel Therrien, Gennadiy Belomoin, and Munir Nayfeh

Appl. Phys. Lett. 77, 1668 (2000); http://dx.doi.org/10.1063/1.1308524 (3 pages) | Cited 12 times

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Ultrasmall, uniform-size (∼1 nm) Si nanoparticles, dispersed from p-type boron-doped silicon, are reconstituted on a Si substrate. Electronic transport processes are studied by current–voltage spectroscopy at room temperature, using scanning tunneling microscopy, in a two-terminal configuration, under both dark conditions and light illumination. Unlike the dark conditions, we observe, under light irradiation, for negative tip biasing, a regular structure at ∼1.0 eV period. The series is discussed in terms of light-induced hole states that otherwise are highly infrequent in ultrasmall Si particles, under standard low doping. © 2000 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
72.80.Cw Elemental semiconductors
73.22.-f Electronic structure of nanoscale materials and related systems
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
71.20.Mq Elemental semiconductors

Capacitance–voltage characteristics of InAs/GaAs quantum dots embedded in a pn structure

R. Wetzler, A. Wacker, E. Schöll, C. M. A. Kapteyn, R. Heitz, and D. Bimberg

Appl. Phys. Lett. 77, 1671 (2000); http://dx.doi.org/10.1063/1.1290137 (3 pages) | Cited 27 times

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We study the electronic states of self-organized InAs quantum dots embedded in a pn junction by means of capacitance–voltage (C–V) characteristics. A model based on the self-consistent solution of the Poisson equation and the drift-diffusion equations is proposed for calculating the capacitance. This model allows us to determine the energy levels of the quantum dot states and their inhomogeneous broadening from a comparison with experimental C–V data. Good quantitative agreement between predictions of the model and the low-frequency C–V characteristics is obtained. © 2000 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.61.Ey III-V semiconductors
02.30.Jr Partial differential equations
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