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18 Sep 2000

Volume 77, Issue 12, pp. 1741-1913

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Transport and optical modeling of organic light-emitting diodes

N. Tessler

Appl. Phys. Lett. 77, 1897 (2000); http://dx.doi.org/10.1063/1.1310630 (3 pages) | Cited 16 times

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We present detailed theoretical modeling of organic light-emitting diodes. We incorporate both optical and electrical modeling into one and thus achieve a more comprehensive picture of the device operation. The importance of including the exciton generation and emission rate in a transport model is highlighted and we find that in such devices the charge recombination zone is not necessarily identical to the exciton emission zone. Moreover, both the electrical and optical structure affect the exciton density distribution and thus also the externally measured light. © 2000 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
71.35.-y Excitons and related phenomena

Back illuminated AlGaN solar-blind photodetectors

D. J. H. Lambert, M. M. Wong, U. Chowdhury, C. Collins, T. Li, H. K. Kwon, B. S. Shelton, T. G. Zhu, J. C. Campbell, and R. D. Dupuis

Appl. Phys. Lett. 77, 1900 (2000); http://dx.doi.org/10.1063/1.1311821 (3 pages) | Cited 38 times

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We report the growth, fabrication, and characterization of AlxGa1−xN (0 ⩽ x ⩽ 0.60) heteroepitaxial back-illuminated solar-blind p-i-n photodiodes on (0001) sapphire substrates. The group III-nitride heteroepitaxial layers are grown by low-pressure metalorganic chemical vapor deposition on double polished sapphire substrates using various growth conditions. The back-illuminated devices exhibit very low dark current densities. Furthermore, they exhibit external quantum efficiencies up to 35% at the peak of the photoresponse (λ ∼ 280 nm). Improvements were made to the growth technique in order to achieve crack-free Al0.4Ga0.6N active regions on a thick Al0.6Ga0.4N window layer and to obtain activated p-type Al0.4Ga0.6N layers. © 2000 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.50.Pz Photoconduction and photovoltaic effects
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Modeling of a GaN-based light-emitting diode for uniform current spreading

Hyunsoo Kim, Ji-Myon Lee, Chul Huh, Sang-Woo Kim, Dong-Joon Kim, Seong-Ju Park, and Hyunsang Hwang

Appl. Phys. Lett. 77, 1903 (2000); http://dx.doi.org/10.1063/1.1311819 (2 pages) | Cited 37 times

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The characteristics of the GaN/InGaN multiquantum-well light-emitting diode (LED) have been examined from the view point of uniform current spreading. By means of simple modeling, it was found that the current density and the length of the lateral current path through the transparent layer represent dominant parameters in determining uniform current spreading. In this regard, we studied the effect of current density on the reliability characteristics of the LED. We were able to significantly improve the electrical, optical, and reliability characteristics of the LED in terms of reducing the length of the lateral current path through the transparent layer. © 2000 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
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