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18 Sep 2000

Volume 77, Issue 12, pp. 1741-1913

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Variation in the fixed charge density of SiOx/ZrO2 gate dielectric stacks during postdeposition oxidation

M. Houssa, V. V. Afanas’ev, A. Stesmans, and M. M. Heyns

Appl. Phys. Lett. 77, 1885 (2000); http://dx.doi.org/10.1063/1.1310635 (3 pages) | Cited 86 times

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The effect of postdeposition oxidation of SiOx/ZrO2 gate dielectric stacks at different temperatures (500–700 °C) on the density of fixed charge and interface states is investigated. It is shown that with increasing oxidation temperature the density of negative fixed charge is reduced, but the density of interface states increases. The net positive charge observed after oxidation at T>500 °C resembles the charge generated at the Si/SiO2 interface by hydrogen in the same temperatures range. This association is supported by the resistance of both types of charge against molecular hydrogen anneal but their fast removal in the presence of atomic hydrogen at 400 °C. Therefore, we propose that the observed oxidation-induced positive charge in the SiOx/ZrO2 gate stack may be related to overcoordinated oxygen centers induced by hydrogen. © 2000 American Institute of Physics.
Show PACS
81.65.Mq Oxidation
73.20.Hb Impurity and defect levels; energy states of adsorbed species
61.72.Cc Kinetics of defect formation and annealing
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Dielectric dispersion and critical behavior in relaxor ferroelectric Pb(Mg1/3Nb2/3)O3–PbTiO3

A. A. Bokov and Z.-G. Ye

Appl. Phys. Lett. 77, 1888 (2000); http://dx.doi.org/10.1063/1.1310629 (3 pages) | Cited 35 times

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A critical behavior of dielectric susceptibility has been discovered in relaxor ferroelectric 0.75Pb(Mg1/3Nb2/3)O3–0.25PbTiO3. The real part of permittivity ε′ was found to follow the relation ε′−ε∞ = χ′∝(T−T0)−2 at T>T0, and ε′∝(TC−T)−1 at T<TC, where T0 ≈ TC<Tm; Tm is the temperature of the diffused ε′(T) maximum as is typical of relaxors; ε∞ is the frequency-independent parameter, and χ′ is the susceptibility depending on frequency via the “universal” relaxation law χ′∝fn−1. The susceptibility χ′ is suggested to originate from the polarization of polar nanoclusters. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
64.60.F- Equilibrium properties near critical points, critical exponents
77.22.Gm Dielectric loss and relaxation

Fabrication of acoustic superlattice LiNbO3 by pulsed current induction and its application for crossed field ultrasonic excitation

Zhi-liang Wan, Quan Wang, Yuan-xin Xi, Yan-qing Lu, Yong-yuan Zhu, and Nai-ben Ming

Appl. Phys. Lett. 77, 1891 (2000); http://dx.doi.org/10.1063/1.1311817 (3 pages) | Cited 5 times

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An acoustic superlattice LiNbO3 crystal with periodic ferroelectric domain structure was fabricated by introducing a periodic electric current through the solid–liquid interface during the crystal growing process. The domain morphology of an as-grown crystal was observed with a scanning electron microscope, and was found to be of good periodicity. A light diffraction experiment indicated that there was a periodic fluctuation of the dielectric constant along the crystal’s growing direction. Using the “crossed field” scheme, a 340 MHz ultrasonic was excited in the crystal, which means that the acoustic superlattice is suitable for constructing high-frequency bulk-wave acoustic devices. © 2000 American Institute of Physics.
Show PACS
62.65.+k Acoustical properties of solids
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants
81.10.Fq Growth from melts; zone melting and refining
77.22.Ch Permittivity (dielectric function)
43.38.Fx Piezoelectric and ferroelectric transducers

Correlation between switching and fatigue in PbZr0.3Ti0.7O3 thin films

M. Grossmann, D. Bolten, O. Lohse, U. Boettger, R. Waser, and S. Tiedke

Appl. Phys. Lett. 77, 1894 (2000); http://dx.doi.org/10.1063/1.1290154 (3 pages) | Cited 31 times

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Fast pulse switching experiments with variable width and amplitude of the write pulse were performed on PbZr0.3Ti0.7O3 thin films and the results were correlated to fatigue measurements with varying frequency and amplitude of the fatigue signal. It was found that small amplitudes in combination with a small pulse width of the write pulse does not provide sufficient switching of the ferroelectric film. Furthermore, for the fatigue measurements, it is shown that the degree of switching caused by the fatigue excitation signal strongly influences the fatigue results. In the case of complete switching, the fatigue behavior is found to be independent of the fatigue frequency and only the number of switching cycles is decisive for the polarization decrease. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.22.Ej Polarization and depolarization
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