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18 Sep 2000

Volume 77, Issue 12, pp. 1741-1913

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Flexible piezoelectric motor based on an acoustic fiber

Riccardo Carotenuto, Antonio Iula, Giosuè Caliano, and Nicola Lamberti

Appl. Phys. Lett. 77, 1905 (2000); http://dx.doi.org/10.1063/1.1310636 (3 pages)

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A flexible, long (500 mm) and thin (diameter 0.8 mm) steel wire capable of transferring mechanical power from the stator of a piezoelectric motor to the rotor is presented. We experimentally demonstrate that the steel wire, acting as a waveguide and here called “acoustic fiber” by optical analogy, can transfer good mechanical power (maximum torque 1.4×10−5 N m, maximum rotational velocity 3200 rpm) with the unique property of high flexibility. The fiber is well suited to a variety of different applications in which the source of the mechanical power must be at a distance from the load. © 2000 American Institute of Physics.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.50.+d Electric motors
07.10.Cm Micromechanical devices and systems

Influence of the heterojunction on the field emission from tetrahedral amorphous carbon on Si

N. L. Rupesinghe, M. Chhowalla, G. A. J. Amaratunga, P. Weightman, D. Martin, P. Unsworth, and J. Murray

Appl. Phys. Lett. 77, 1908 (2000); http://dx.doi.org/10.1063/1.1310623 (3 pages) | Cited 6 times

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In order to study the influence of the back barrier on the electron emission properties of tetrahedral amorphous carbon (ta-C), we have deposited identical films on p and n+ Si. The valence and conduction band offsets were measured for ta-C on p and n+ Si using in situ x-ray photoelectron spectroscopy and optical spectroscopy. From the band measurements it is shown that there is a substantial back barrier to emission. We show that for films having very similar properties, the electron emission can be influenced by the ta-C/Si heterojunction. © 2000 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
79.60.Jv Interfaces; heterostructures; nanostructures
78.40.Fy Semiconductors
78.66.Db Elemental semiconductors and insulators
78.66.Jg Amorphous semiconductors; glasses
79.20.Kz Other electron-impact emission phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Nondestructive positron-lifetime measurements during fatigue of austenitic stainless steel using a mobile positron beam

Andrea Barbieri, Sabine Hansen-Ilzhöfer, Achim Ilzhöfer, and Uwe Holzwarth

Appl. Phys. Lett. 77, 1911 (2000); http://dx.doi.org/10.1063/1.1311323 (3 pages) | Cited 5 times

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Nondestructive positron-lifetime measurements have been performed during stress-controlled symmetric fatigue of austenitic stainless steel up to failure for different applied stress amplitudes between 230 and 300 MPa. For this purpose a fatigue machine has been equipped with a mobile positron beam emitted from a 22 μCi (0.8 MBq) 72Se/72As generator. A pronounced increase of the mean positron lifetime has been found within the first 10% of fatigue life. Saturation has been reached after 40% of fatigue life. The mean positron lifetime at failure depends strongly on the applied stress amplitude. © 2000 American Institute of Physics.
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81.70.-q Methods of materials testing and analysis
78.70.Bj Positron annihilation
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