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2 Oct 2000

Volume 77, Issue 14, pp. 2083-2258

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Photostability enhancement of an azobenzene photonic polymer

A. Galvan-Gonzalez, K. D. Belfield, G. I. Stegeman, M. Canva, K.-P. Chan, K. Park, L. Sukhomlinova, and R. J. Twieg

Appl. Phys. Lett. 77, 2083 (2000); http://dx.doi.org/10.1063/1.1313809 (3 pages) | Cited 6 times

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We have found that the presence of a methacrylate group on an azobenzene electro-optic chromophore can provide an enhancement in photostability of up to one or two orders of magnitude. Systematic studies involving the change in chromophore structure and atmospheric environment indicate that the photostabilization is due to antioxidant action by the unsaturated functional group. © 2000 American Institute of Physics.
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42.70.Jk Polymers and organics
78.20.Jq Electro-optical effects
82.50.-m Photochemistry
82.35.-x Polymers: properties; reactions; polymerization

Surface-emitting distributed feedback quantum-cascade lasers

W. Schrenk, N. Finger, S. Gianordoli, L. Hvozdara, G. Strasser, and E. Gornik

Appl. Phys. Lett. 77, 2086 (2000); http://dx.doi.org/10.1063/1.1313807 (3 pages) | Cited 30 times

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We report on the realization of second-order distributed feedback quantum-cascade lasers at λ = 9.35 μm, where the active region consists of GaAs, AlGaAs, and strained InGaAs grown on GaAs. A metal-stripe surface grating structure allows a high surface emission efficiency for the TM-polarized light. The emitted power via the surface is in the range of 100 mW and exceeds the emitted power from one facet. A double-lobed surface-emission far-field pattern is obtained for the lasing mode. The single-mode emission wavelength is continuously tunable by the heat sink temperature. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
42.79.Dj Gratings

Time-gated scanning near-field optical microscopy

S. K. Sekatskii, G. T. Shubeita, and G. Dietler

Appl. Phys. Lett. 77, 2089 (2000); http://dx.doi.org/10.1063/1.1314287 (3 pages) | Cited 6 times

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A time-gated scanning near-field optical microscope (SNOM) has been developed. The optical signal was recorded at the precise moment during the fiber tip oscillation period when it made contact with the sample surface. The use of such an approach substantially improves the signal-to-noise ratio for common SNOM applications such as frustrated total internal reflection, surface plasmon imaging, and fluorescence resonance energy transfer-based SNOM. The observed dependence of the frustrated total internal reflection optical signal on the gate delay time confirms that repetitive bumping is the mechanism responsible for the shear force tip–sample interaction. © 2000 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
07.60.Rd Visible and ultraviolet spectrometers

Comparative study of the analog performance of a vertical-cavity surface-emitting laser under gain and cavity loss modulation

Janice A. Hudgings, Robert J. Stone, Sui F. Lim, Kam Y. Lau, and Connie J. Chang-Hasnain

Appl. Phys. Lett. 77, 2092 (2000); http://dx.doi.org/10.1063/1.1314297 (3 pages) | Cited 2 times

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The analog performance of a vertical-cavity surface-emitting laser is compared for gain and cavity loss modulation. Direct gain modulation consistently results in a larger spur free dynamic range (SFDR) than does cavity loss modulation; the maximum SFDR achieved is 96.5 dB Hz2/3. Analysis of the physical origins of variations in the measured SFDR with applied electrical bias indicates potential strategies for improving the analog response of these lasers. © 2000 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Optical control of third-harmonic generation in azo-doped polymethylmethacrylate thin films

Victor M. Churikov and Chia Chen Hsu

Appl. Phys. Lett. 77, 2095 (2000); http://dx.doi.org/10.1063/1.1314878 (3 pages) | Cited 12 times

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The possibility of controlling third-harmonic generation in polymethylmethacrylate doped with disperse red 1 via exposition by frequency-doubled and fundamental radiation of a Nd:YAG laser is demonstrated. It was possible to change the third-harmonic efficiency up to four times depending on pumping intensity. The change was completely reversible after 15 min of dark relaxation in the case of pumping the sample with the second harmonic. This effect is attributed to the reversible change of third-order susceptibility due to trans-to-cis isomerization of azo-bond molecules. © 2000 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Jk Polymers and organics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Qn Polymers; organic compounds
42.65.An Optical susceptibility, hyperpolarizability
82.30.Qt Isomerization and rearrangement

Dual-band infrared metallodielectric photonic crystal filters

J. A. Oswald, B.-I. Wu, K. A. McIntosh, L. J. Mahoney, and S. Verghese

Appl. Phys. Lett. 77, 2098 (2000); http://dx.doi.org/10.1063/1.1314880 (3 pages) | Cited 6 times

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We have designed a metallodielectric photonic crystal with planar metallic scatterers to produce high reflectance in both the 3–5 and 8–12 μm atmospheric windows over a wide range of angles of incidence. We have fabricated similar crystals using photolithography with Al scatterers in a polymer dielectric medium and measured their optical transmission, confirming the results of our design simulations. A fabricated filter produced a reflection band with >30 dB rejection and a fractional bandwidth of 0.38. Our results show that it is possible to fabricate infrared photonic crystal filters comparable in performance to those with thick metal elements, but with the ease of manufacture of thin metal layers. © 2000 American Institute of Physics.
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42.79.Ci Filters, zone plates, and polarizers
42.70.Qs Photonic bandgap materials
42.82.Cr Fabrication techniques; lithography, pattern transfer
78.66.Bz Metals and metallic alloys

Tuning of second-harmonic generation in waveguides induced by photorefractive spatial solitons

Song Lan, Charalambos Anastassiou, Mordechai Segev, Ming-feng Shih, J. A. Giordmaine, and Greg Mizell

Appl. Phys. Lett. 77, 2101 (2000); http://dx.doi.org/10.1063/1.1314890 (3 pages) | Cited 5 times

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We demonstrate experimentally wavelength tuning of second-harmonic generation in waveguides induced by photorefractive solitons in a KNbO3 crystal. By rotating the crystal, we can attain as large wavelength tunability as in bulk but with considerable improvement in conversion efficiency and elimination of walk-off. © 2000 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Tg Optical solitons; nonlinear guided waves
42.65.Wi Nonlinear waveguides
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Passively mode-locked picosecond lasers with up to 59 GHz repetition rate

L. Krainer, R. Paschotta, M. Moser, and U. Keller

Appl. Phys. Lett. 77, 2104 (2000); http://dx.doi.org/10.1063/1.1315336 (2 pages) | Cited 16 times

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We present very compact Nd:YVO4 lasers which are passively mode-locked with a semiconductor saturable absorber mirror at very high repetition rates between 39 and 59 GHz. We achieved between 30 and 80 mW of average output power and pulse durations of 4.8–5.5 ps. As the pulse-to-pulse spacing is only 17 ps at 59 GHz, we are approaching the limit in repetition rate which is set by the pulse duration. © 2000 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Rz Doped-insulator lasers and other solid state lasers
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Bh Lenses, prisms and mirrors
42.70.Hj Laser materials

Permanent polarization gratings in photosensitive Langmuir–Blodgett films

G. Cipparrone, A. Mazzulla, S. P. Palto, S. G. Yudin, and L. M. Blinov

Appl. Phys. Lett. 77, 2106 (2000); http://dx.doi.org/10.1063/1.1308056 (3 pages) | Cited 22 times

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An investigation was carried out on thin permanent phase polarization gratings recorded in Langmuir–Blodgett films using two orthogonal circularly polarized Ar-ion laser beams. The films are composed of amphiphilic azo-dye molecules and manifest an extremely large value of photoinduced optical anisotropy, Δn ≈ 0.36. The experimental results are in excellent accord with the theoretical model based on the Jones matrix representation of the polarization pattern. The gratings are stable at least, for half a year. © 2000 American Institute of Physics.
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42.40.Eq Holographic optical elements; holographic gratings
42.79.Dj Gratings
78.66.Qn Polymers; organic compounds

Near-field infrared imaging with a microfabricated solid immersion lens

D. A. Fletcher, K. B. Crozier, C. F. Quate, G. S. Kino, K. E. Goodson, D. Simanovskii, and D. V. Palanker

Appl. Phys. Lett. 77, 2109 (2000); http://dx.doi.org/10.1063/1.1313368 (3 pages) | Cited 36 times

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We report imaging in the infrared with a microfabricated solid immersion lens. The integrated 15-μm-diameter lens and cantilever are fabricated from single-crystal silicon and scanned in contact with a sample to obtain an image. We demonstrate a focused spot size of λ/5 and an effective numerical aperture of 2.5 with λ=9.3 μm light. The total power transmitted through the lens is a factor of 103 greater than through a metal aperture giving the same spatial resolution. Two 1.0 μm holes in a metal film separated by 3.0 μm are imaged with the solid immersion lens in transmission and shown to be resolved. © 2000 American Institute of Physics.
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42.79.Bh Lenses, prisms and mirrors
07.10.Cm Micromechanical devices and systems
42.86.+b Optical workshop techniques
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Generation of atmospheric pressure plasma with a dual-chamber discharge

H. D. Park and S. K. Dhali

Appl. Phys. Lett. 77, 2112 (2000); http://dx.doi.org/10.1063/1.1315339 (3 pages) | Cited 5 times

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We discuss the experimental results of a method for generation of nonthermal plasma at atmospheric pressure. The device uses two chambers separated by a dielectric. A low-pressure chamber produces UV emission, which is coupled to the atmospheric pressure discharge. The electrical and optical characteristics of this device are discussed. Results show that the dual-chamber discharge is more uniform compared to conventional dielectric-barrier discharges. © 2000 American Institute of Physics.
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52.50.-b Plasma production and heating
52.80.Hc Glow; corona
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Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films

M. Benaissa, P. Vennéguès, B. Beaumont, P. Gibart, W. Saikaly, and A. Charai

Appl. Phys. Lett. 77, 2115 (2000); http://dx.doi.org/10.1063/1.1313811 (3 pages) | Cited 13 times

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In the present letter, Mg-doped GaN thin films grown by metalorganic vapor-phase epitaxy were studied using parallel electron energy-loss spectroscopy in a transmission electron microscope. A microstructural characterization of such thin films showed the presence of pyramidal defects (PDs) with a density of about 1018 cm−3. Comparison of energy-loss spectra recorded outside a PD and from the PD showed a significant change in the energy-loss near-edge structure strongly reflecting the presence of inclusions (Mg-based), the electronic properties of which differ from those of GaN. Considering, however, their relatively high density ( ∼ 1018 cm−3), one can expect that the optical properties of such inclusions may interfere with those of GaN and, therefore, be at the origin of the frequently obtained blue emission at 2.8–2.9 eV in heavily doped samples. © 2000 American Institute of Physics.
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79.20.Kz Other electron-impact emission phenomena
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.72.Qq Microscopic defects (voids, inclusions, etc.)
78.66.Fd III-V semiconductors
71.55.Eq III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Enhanced second harmonic generation at surface in transparent nanocrystalline TeO2-based glass ceramics

Ryosuke Sakai, Yasuhiko Benino, and Takayuki Komatsu

Appl. Phys. Lett. 77, 2118 (2000); http://dx.doi.org/10.1063/1.1313805 (3 pages) | Cited 39 times

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Transparent TeO2-based glass ceramics consisting of nanocrystalline particles such as 15K2O.15Nb2O5.70TeO2 have been prepared, and the effect of surface layers on the second harmonic (SH) intensity has been examined using the Maker fringe method. An enhanced second harmonic generation (SHG) with fine fringe patterns has been observed at the original surface layers in transparent glass ceramics. The thickness of the surface layers giving a strong SHG is estimated to be around 50 μm, which is much larger than the coherence length of 3.5 μm for the glass ceramics. The glass ceramics without the original surface layers obtained by mechanical polishing show weak SH intensity, and any fringe pattern is not observed. Any evidence for an orientation of crystals at the surface has not been confirmed, and the origin of an enhanced SHG is unclear at this moment. © 2000 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Ce Glasses, quartz
81.05.Pj Glass-based composites, vitroceramics
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Ps Polishing, grinding, surface finishing
42.86.+b Optical workshop techniques
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.-w Structure of nanoscale materials

Far-infrared reflectivity of Cd3−xZnxAs2 monocrystals

A. I. Belogorokhov, I. S. Zakharov, A. V. Kochura, and A. F. Knjazev

Appl. Phys. Lett. 77, 2121 (2000); http://dx.doi.org/10.1063/1.1314292 (3 pages) | Cited 2 times

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Reflectivity spectra of Cd3−xZnxAs2 solid solutions with compositions x = 1.2, 1.8, 2.25, and 2.55 were measured at room temperature within the range of 50–700 cm−1. Analysis based upon Kramers–Kronig relation has helped to calculate the basic optical functions (real and imaginary parts of dielectric constant, reflection, and absorption idecis) in the measured energy range. Dispersion analysis has been applied to find the parameters of phonons within the range of 50–300 cm−1. As a result a curve has been made to characterize the dependency of the most strong oscillator upon their composition features. © 2000 American Institute of Physics.
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78.30.Hv Other nonmetallic inorganics
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Stress tuning in crystal ion slicing to form single-crystal potassium tantalate films

M. Levy, R. M. Osgood, A. S. Bhalla, R. Guo, L. E. Cross, A. Kumar, S. Sankaran, and H. Bakhru

Appl. Phys. Lett. 77, 2124 (2000); http://dx.doi.org/10.1063/1.1314294 (3 pages) | Cited 9 times

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We report on the implementation of crystal ion slicing in potassium tantalate (KTaO3). Deep-ion implantation is used to create a buried sacrificial layer in (001) single-crystal wafers of KTaO3. 10-μm-thick single-crystal films have been fabricated by adjusting the stress level in the implantation damage layer to induce room-temperature etchless exfoliation. Crack propagation is found to depend critically on implantation dose, with a threshold dose for exfoliation near 1×1016 cm−2. A significant implantation-induced etch selectivity between the sacrificial layer and the rest of the sample is also found. Capacitance measurements show that the films exhibit a bulk-like dielectric constant and loss tangents below 0.01 at low temperatures. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
61.72.up Other materials
68.60.Bs Mechanical and acoustical properties
77.80.-e Ferroelectricity and antiferroelectricity
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation

Electromigration in YBa2Cu3O7−δ using a metal clad near-field scanning optical microscope probe

S. H. Huerth, M. P. Taylor, H. D. Hallen, and B. H. Moeckly

Appl. Phys. Lett. 77, 2127 (2000); http://dx.doi.org/10.1063/1.1314296 (3 pages) | Cited 8 times

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Electromigration or electron-induced-migration (EIM) of oxygen in the hightemperature superconductor YBa2Cu3O7−δ alters the superconducting properties through variations in the oxygen concentration. We study this process with unprecedented spatial resolution and find that the transport of oxygen through a grain boundary into a neighboring grain is unlikely, and that hot electron effects dominate the mechanism for EIM in this system. The extent of the EIM effects implies that grain boundary scattering is strong for these electrons. EIM is induced with the tunnel current from the metal cladding on a near-field optical microscope (NSOM). Variations in the oxygen concentration due to fabrication, aging, and electromigration are imaged optically and corroborated to the grain structure. © 2000 American Institute of Physics.
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66.30.Qa Electromigration
74.78.-w Superconducting films and low-dimensional structures
74.72.-h Cuprate superconductors
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
61.72.Mm Grain and twin boundaries
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
74.25.F- Transport properties

X-ray diffraction and optical characterization of interdiffusion in self-assembled InAs/GaAs quantum-dot superlattices

S. J. Xu, H. Wang, Q. Li, M. H. Xie, X. C. Wang, W. J. Fan, and S. L. Feng

Appl. Phys. Lett. 77, 2130 (2000); http://dx.doi.org/10.1063/1.1314298 (3 pages) | Cited 19 times

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We report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measured x-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlattices annealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In–Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated. © 2000 American Institute of Physics.
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68.35.Fx Diffusion; interface formation
78.66.Fd III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
66.30.Ny Chemical interdiffusion; diffusion barriers
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.72.Cc Kinetics of defect formation and annealing

Determination of thickness and optical constants of amorphous silicon films from transmittance data

M. Mulato, I. Chambouleyron, E. G. Birgin, and J. M. Martínez

Appl. Phys. Lett. 77, 2133 (2000); http://dx.doi.org/10.1063/1.1314299 (3 pages) | Cited 21 times

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This work presents the application of a recently developed numerical method to determine the thickness and the optical constants of thin films using experimental transmittance data only. This method may be applied to films not displaying a fringe pattern and is shown to work for a-Si:H (hydrogenated amorphous silicon) layers as thin as 100 nm. The performance and limitations of the method are discussed on the basis of experiments performed on a series of six a-Si:H samples grown under identical conditions, but with thickness varying from 98 nm to 1.2 μm. © 2000 American Institute of Physics.
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78.66.Jg Amorphous semiconductors; glasses
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.55.-a Thin film structure and morphology
78.66.Db Elemental semiconductors and insulators
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
78.40.Pg Disordered solids
78.35.+c Brillouin and Rayleigh scattering; other light scattering
78.40.Fy Semiconductors
78.30.Am Elemental semiconductors and insulators

Optical bandgap formation in AlInGaN alloys

G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, G. Simin, M. S. Shur, and R. Gaska

Appl. Phys. Lett. 77, 2136 (2000); http://dx.doi.org/10.1063/1.1314288 (3 pages) | Cited 28 times

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We report on the spectral dynamics of the reflectivity, site-selectively excited photoluminescence, photoluminescence excitation, and time-resolved luminescence in quaternary AlInGaN epitaxial layers grown on GaN templates. The incorporation of a few percents of In into AlGaN causes significant smoothening of the band-bottom potential profile in AlInGaN layers owing to improved crystal quality. An abrupt optical bandgap indicates that a nearly lattice-matched AlInGaN/GaN heterostructure with large energy band offsets can be grown for high-efficiency light-emitting devices. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
78.40.Fy Semiconductors
71.20.Nr Semiconductor compounds
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.47.-p Spectroscopy of solid state dynamics

Stress-induced anisotropy of phosphorous islands on gallium arsenide

C. H. Li, L. Li, Q. Fu, M. J. Begarney, and R. F. Hicks

Appl. Phys. Lett. 77, 2139 (2000); http://dx.doi.org/10.1063/1.1314290 (3 pages) | Cited 3 times

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The initial growth of (2×4) phosphorous islands on (4×2) terraces of gallium arsenide (001) has been studied. The islands grow anisotropically in the [110] direction with an aspect ratio of approximately 8 to 1 at moderate coverages. The distribution of island widths in the [math10] direction follows a Gaussian function. The mean width increases from 24±6 to 47±11 Å as the phosphorous coverage increases from 0.10 to 0.85 monolayers. Evidently, the island anisotropy is caused by stress imposed on the underlying gallium layer by the smaller, more tightly bound phosphorous dimers. © 2000 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Bs Mechanical and acoustical properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.05.Ea III-V semiconductors

Lattice location of implanted Cu in highly doped Si

U. Wahl, A. Vantomme, G. Langouche, J. P. Araújo, L. Peralta, and J. G. Correia

Appl. Phys. Lett. 77, 2142 (2000); http://dx.doi.org/10.1063/1.1314876 (3 pages) | Cited 8 times

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We report on the lattice location of ion-implanted 67Cu in p+- and n+-Si using the emission channeling technique. Following room-temperature implantation, the majority of Cu was found on near-substitutional sites in both p+- and n+-Si. Annealing in the temperature range 200–600 °C resulted in changes of near-substitutional Cu to random sites in p+-Si, while in n+- Si all of the near-substitutional Cu was converted to ideal substitutional lattice sites. The activation energy for dissociation is estimated to be 1.7–2.0 eV for near-substitutional Cu in p+-Si and 2.9(2) eV for ideal substitutional Cu in n+-Si. © 2000 American Institute of Physics.
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61.72.uf Ge and Si
61.72.S- Impurities in crystals
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.Cc Kinetics of defect formation and annealing
61.72.Yx Interaction between different crystal defects; gettering effect

X-ray diffraction analysis of the defect structure in epitaxial GaN

H. Heinke, V. Kirchner, S. Einfeldt, and D. Hommel

Appl. Phys. Lett. 77, 2145 (2000); http://dx.doi.org/10.1063/1.1314877 (3 pages) | Cited 103 times

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High-resolution x-ray diffraction has been used to analyze the type and density of threading dislocations in (001)-oriented GaN epitaxial layers. For this, (00l) and (hkl) Bragg reflections with h or k nonzero were studied, the latter one measured in skew symmetric diffraction geometry. The defect analysis was applied to a variety of GaN layers grown by molecular-beam epitaxy under very different conditions. The outcome is a fundamental correlation between the densities of edge- and screw-type dislocations. © 2000 American Institute of Physics.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.05.cp X-ray diffraction
81.05.Ea III-V semiconductors

Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy

A. Ayabe, H. Asahi, H. J. Lee, O. Maeda, K. Konishi, K. Asami, and S. Gonda

Appl. Phys. Lett. 77, 2148 (2000); http://dx.doi.org/10.1063/1.1314881 (3 pages) | Cited 7 times

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TlInGaAs/InP double heterostructures (DHs) were grown on (100) InP substrates by gas-source molecular-beam epitaxy. Almost no occurrence of Tl interdiffusion at the InP/TlInGaAs heterointerface was confirmed. The photoluminescence (PL) intensity for the DH was approximately ten times stronger than that of the single heterostructure. The PL peak energy and its variation with temperature for the TlInGaAs/InP DH decreased with increasing Tl composition. For the DH with a Tl composition of 13%, the PL peak energy varied only slightly with temperature (0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K). © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.70.Hj Laser materials
71.20.Nr Semiconductor compounds
81.05.Ea III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes

Dynamics of optical gain in InxGa1−xN multi-quantum-well-based laser diodes

Yoichi Kawakami, Yukio Narukawa, Kunimichi Omae, Shigeo Fujita, and Shuji Nakamura

Appl. Phys. Lett. 77, 2151 (2000); http://dx.doi.org/10.1063/1.1314882 (3 pages) | Cited 15 times

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Dynamical behavior of optical gain formation has been assessed at room temperature in the InxGa1−xN multi-quantum-well (MQW) based laser diodes (LDs) by employing pump and probe spectroscopy with a pulse width of 150 fs. The LDs are composed of (a) In0.1Ga0.9N–In0.02Ga0.98N MQW and (b) In0.3Ga0.7N–In0.05Ga0.95N MQW, whose stimulated emissions correspond to near ultraviolet (390 nm) and blue (440 nm), respectively. The optical gain was contributed from the nearly delocalized states [the lowest-quantized MQW levels (LQL)] in the sample (a), while it was from highly localized levels with respect to the LQL by 500 meV for the sample (b). It was found that the photogenerated carriers rapidly (less than 1 ps) transferred to the LQL, and then relaxed to the localized tail within the time scale of about 5 ps, giving rise to the optical gain. Such gain spectra were saturated and other bands appeared in the vicinity of the LQL under higher photoexcitation. © 2000 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors

Lattice location of erbium in high-fluence implanted silicon–germanium: Backscattering/channeling study

V. S. Touboltsev, J. Räisänen, E. Johnson, A. Johansen, and L. Sarholt

Appl. Phys. Lett. 77, 2154 (2000); http://dx.doi.org/10.1063/1.1315345 (2 pages) | Cited 4 times

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High-quality crystalline Si0.75Ge0.25 alloy crystals were implanted with 70 keV Er+ ions at 550 °C to a fluence of 1019 m−2. In situ Rutherford backscattering/channeling spectrometry with a 500 keV He2+ beam revealed Er atoms located on regular lattice sites of the host matrix. Angular scans taken around the 〈100〉, 〈110〉, and 〈111〉 crystallographic axes showed that a considerable fraction of Er atoms occupy tetrahedral interstitial sites. © 2000 American Institute of Physics.
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61.72.up Other materials
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
61.72.S- Impurities in crystals
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