APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

9 Oct 2000

Volume 77, Issue 15, pp. 2271-2423

Return to All Sections
back to top
RSS Feeds

Self-assembled Ge nanostructures as field emitters

V. N. Tondare, B. I. Birajdar, N. Pradeep, D. S. Joag, A. Lobo, and S. K. Kulkarni

Appl. Phys. Lett. 77, 2394 (2000); http://dx.doi.org/10.1063/1.1316076 (3 pages) | Cited 13 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Self-assembled two-dimensional arrays of Ge islands on Si(111)7×7 were grown by depositing Ge on Si(111)7×7 substrates held at 650 K. It was observed that these islands were conical in shape as well as nearly uniform in size and shape. Consequently, the substrates of about 1 cm2 area were used as field-emitter arrays. It was found that the arrays exhibited a low onset voltage for field emission, large emission current, as well as high current stability. © 2000 American Institute of Physics.
Show PACS
85.45.Db Field emitters and arrays, cold electron emitters
81.05.Cy Elemental semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
79.70.+q Field emission, ionization, evaporation, and desorption
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Temperature-dependent internal friction in silicon nanoelectromechanical systems

S. Evoy, A. Olkhovets, L. Sekaric, J. M. Parpia, H. G. Craighead, and D. W. Carr

Appl. Phys. Lett. 77, 2397 (2000); http://dx.doi.org/10.1063/1.1316071 (3 pages) | Cited 43 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report the temperature-dependent mechanical properties of nanofabricated silicon resonators operating in the megahertz range. Reduction of temperature leads to an increase of the resonant frequencies of up to 6.5%. Quality factors as high as 1000 and 2500 are observed at room temperature in metallized and nonmetallized devices, respectively. Although device metallization increases the overall level of dissipation, internal friction peaks are observed in all devices in the T = 160–180 K range. © 2000 American Institute of Physics.
Show PACS
07.10.Cm Micromechanical devices and systems
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.05.Cy Elemental semiconductors
85.40.Ls Metallization, contacts, interconnects; device isolation
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices

Resonant-cavity-enhanced p-type GaAs/AlGaAs quantum-well infrared photodetectors

A. Shen, H. C. Liu, M. Gao, E. Dupont, M. Buchanan, J. Ehret, G. J. Brown, and F. Szmulowicz

Appl. Phys. Lett. 77, 2400 (2000); http://dx.doi.org/10.1063/1.1317548 (3 pages) | Cited 10 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Resonant cavities are used to enhance the absorption efficiency in p-type GaAs/AlGaAs quantum-well infrared photodetectors. The cavities are fabricated by applying thick gold films on the detector bottom sides after substrate removal via selective wet etching. The observed peak enhancement and spectral shape are in good agreement with model predictions. Peak absorption of about 25% is obtained for the device studied. © 2000 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
81.65.Cf Surface cleaning, etching, patterning

Role of CsF on electron injection into a conjugated polymer

Pongpun Piromreun, HwanSool Oh, Yulong Shen, George G. Malliaras, J. Campbell Scott, and Phil J. Brock

Appl. Phys. Lett. 77, 2403 (2000); http://dx.doi.org/10.1063/1.1317547 (3 pages) | Cited 76 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We studied electron injection from Al and Au cathodes into the conjugated polymer poly[2-methoxy,5-(2-ethylhexoxy)-1,4-phenylene vinylene] (MEH–PPV). When a thin CsF layer is inserted between MEH–PPV and Al, a substantial enhancement in electron injection is observed. Insertion of the same layer between MEH–PPV and Au does not have a similar effect, indicating that the enhancement mechanism is specific to CsF and Al. Thin Cs layers enhance electron injection regardless of the cathode metal. A mechanism that explains these observations is proposed. © 2000 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
73.40.Ns Metal-nonmetal contacts
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close