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9 Oct 2000

Volume 77, Issue 15, pp. 2271-2423

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Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm

R. J. Curry, W. P. Gillin, A. P. Knights, and R. Gwilliam

Appl. Phys. Lett. 77, 2271 (2000); http://dx.doi.org/10.1063/1.1316064 (3 pages) | Cited 43 times

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1.5-μm light-emitting diodes which operate at room temperature have been fabricated on silicon substrates. The devices use an erbium-containing organic light-emitting diode (OLED) structure which utilizes p++ silicon as the hole injection contact. The OLEDs use N, N′-diphenyl-N,N′-bis(3-methyl)-1,1′-biphenyl-4,4′-diamine as the hole transporting layer and erbium tris(8-hydroxyquinoline) as the electron conducting and emitting layer. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices

Detection of volatile organic compound vapors by using a vapochromic material on a tapered optical fiber

C. Bariáin, I. R. Matías, I. Romeo, J. Garrido, and M. Laguna

Appl. Phys. Lett. 77, 2274 (2000); http://dx.doi.org/10.1063/1.1316074 (3 pages) | Cited 24 times

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A low-cost optical fiber sensor to detect volatile organic compounds has been developed. Changes of up to 13.5 dB in the transmitted optical power have been detected with different concentrations of acetone and dichloromethane vapors. The device uses a standard single-mode fiber. The sensing mechanism relies on a vapor-induced refractive index change in a film of a vapochromic material deposited on the thinner region of a tapered fiber. © 2000 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.60.Vg Fiber-optic instruments
42.81.Pa Sensors, gyros
82.80.-d Chemical analysis and related physical methods of analysis
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Wc Optical coatings

Wavelength locking of multiple diode lasers by multiplexed gratings in a photorefractive crystal

Changxi Yang and Min Xiao

Appl. Phys. Lett. 77, 2277 (2000); http://dx.doi.org/10.1063/1.1315630 (3 pages)

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We propose a technique to simultaneously stabilize relative wavelengths among multiple diode lasers by using multiplexed photorefractive gratings. Each grating is designed to be Bragg matched for the counter-propagating reflection at a specific diode laser wavelength. Experimental results from stabilization of two diode laser wavelengths by using two photorefractive gratings exhibit excellent short- and long-term wavelength stability. We show that this technique can be extended to stabilize relative wavelengths of many diode lasers. The thermal stability of the photorefractive gratings and the signal-to-noise ratio (or the bit-error rate) are discussed. © 2000 American Institute of Physics.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.60.By Design of specific laser systems
42.79.Dj Gratings

Polymer phosphorescent light-emitting devices doped with tris(2-phenylpyridine) iridium as a triplet emitter

Chang-Lyoul Lee, Kyung Bok Lee, and Jang-Joo Kim

Appl. Phys. Lett. 77, 2280 (2000); http://dx.doi.org/10.1063/1.1315629 (3 pages) | Cited 136 times

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We have fabricated phosphorescent polymer light-emitting devices with tris(2-phenylpyridine) iridium [Ir(ppy)3] as a triplet emissive dopant in poly(vinylcarbazole) (PVK) host. The device with 8% doping concentration of [Ir(ppy)3] in PVK showed the external quantum efficiency of 1.9% and the peak luminance of 2,500 cd/m2. The emission spectrum of the device exhibited no emission from PVK, indicating that the energy transfer from PVK to [Ir(ppy)3] is efficient. This work demonstrates that efficient electrophosphorescent light-emitting devices can be realized with polymers. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.-b Other luminescence and radiative recombination
42.70.Jk Polymers and organics

Continuous-wave operation of phase-coupled vertical-cavity surface-emitting laser arrays

F. Monti di Sopra, M. Brunner, H.-P. Gauggel, H. P. Zappe, M. Moser, R. Hövel, and E. Kapon

Appl. Phys. Lett. 77, 2283 (2000); http://dx.doi.org/10.1063/1.1316772 (3 pages) | Cited 25 times

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Coupled arrays of vertical-cavity surface-emitting lasers were realized by patterning the reflectivity of the top-distributed Bragg reflector using a phase-matching layer and a metal grid. For improved current injection and better heat dissipation the devices were selectively oxidized. Continuous-wave room-temperature operation of these arrays has been achieved at 960 nm. Near- and far-field measurements confirm the phase-coupling in a typical out-of-phase mode pattern. Analysis of the differential efficiency reveals a strong decrease when the number of lasing pixels and hence the mesa size is increased. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.-k Nonlinear optics
42.60.Pk Continuous operation

Surface plasmon quantum cascade lasers at λ ∼ 19 μm

Alessandro Tredicucci, Claire Gmachl, Michael C. Wanke, Federico Capasso, Albert L. Hutchinson, Deborah L. Sivco, Sung-Nee G. Chu, and Alfred Y. Cho

Appl. Phys. Lett. 77, 2286 (2000); http://dx.doi.org/10.1063/1.1316768 (3 pages) | Cited 23 times

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The longest wavelength III–V semiconductor laser to date has been realized employing a quantum cascade configuration for the active material. It operates at λ ∼ 19 μm on interminiband transitions in graded superlattices. The waveguide is based on surface plasmon modes confined at a metal–semiconductor interface. The devices emit peak output powers of 14 mW per facet at 10 K and laser action is achieved up to the maximum temperature of 145 K. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

Optical characterization of CdS nanocrystals in Al2O3 matrices fabricated by ion-beam synthesis

D. Matsuura, Y. Kanemitsu, T. Kushida, C. W. White, J. D. Budai, and A. Meldrum

Appl. Phys. Lett. 77, 2289 (2000); http://dx.doi.org/10.1063/1.1316777 (3 pages) | Cited 32 times

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We have studied optical properties of CdS nanocrystals formed by sequential Cd+ and S+ ion implantation into Al2O3 matrices. Two bands related to free excitons in the wurtzite CdS are clearly observed in the absorption spectrum at low temperatures. Efficient photoluminescence (PL) appears near the absorption edge. At high temperatures, the band edge PL band consists of two components. One is the free-exciton emission with a short lifetime (several hundreds of picoseconds), while the other is the bound exciton emission at shallow localized states with a long lifetime (several nanoseconds). The temperature dependence of the band gap energy has been determined for wurtzite CdS nanocrystals. Spectroscopic analysis shows that high-quality compound semiconductor nanocrystals are fabricated by the ion-beam synthesis technique. © 2000 American Institute of Physics.
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78.66.Vs Fine-particle systems
81.07.-b Nanoscale materials and structures: fabrication and characterization
73.22.-f Electronic structure of nanoscale materials and related systems
61.72.up Other materials
78.40.Fy Semiconductors
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
81.05.Dz II-VI semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
71.35.Gg Exciton-mediated interactions
78.47.-p Spectroscopy of solid state dynamics

Stabilization of the response time in photorefractive polymers

J. A. Herlocker, C. Fuentes-Hernandez, K. B. Ferrio, E. Hendrickx, P.-A. Blanche, N. Peyghambarian, B. Kippelen, Y. Zhang, J. F. Wang, and S. R. Marder

Appl. Phys. Lett. 77, 2292 (2000); http://dx.doi.org/10.1063/1.1316077 (3 pages) | Cited 12 times

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The optical and photoconductive fatigue of fast photorefractive polymers have been studied in a family of C60-sensitized polymer composites containing styrene-based chromophores with varying ionization potential. Changes in response time and in photoconductivity were studied for exposures up to 104 J/cm2. Increasing the chromophore ionization potential beyond that of the polyvinylcarbazole host was found to stabilize the response time. Studies of the electric-field dependence of the steady-state diffraction efficiency in various samples confirm the role of C60 anions as possible traps. © 2000 American Institute of Physics.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Jk Polymers and organics
42.70.Gi Light-sensitive materials
72.40.+w Photoconduction and photovoltaic effects
72.80.Rj Fullerenes and related materials
78.20.Jq Electro-optical effects
72.80.Le Polymers; organic compounds (including organic semiconductors)
78.20.-e Optical properties of bulk materials and thin films

Optimization of the emission characteristics of light emitting diodes by surface plasmons and surface waveguide modes

S. Gianordoli, R. Hainberger, A. Köck, N. Finger, E. Gornik, C. Hanke, and L. Korte

Appl. Phys. Lett. 77, 2295 (2000); http://dx.doi.org/10.1063/1.1317538 (3 pages) | Cited 14 times

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In this letter, the influence of metal films and dielectric waveguides on the radiation characteristics of light emitting diodes (LEDs) is investigated. Cross and hexagonal surface grating structures are used to excite surface plasmons and waveguide modes in these media. A beam divergence as small as 17° is achieved for a hexagonal grating coated with a 40 nm Ag film. The maximum quantum efficiency is found for a hexagonal grating with a 10-nm-thick Au film and a 250-nm-thick dielectric layer. The optical power emitted by this LED into the solid angle from −30° to 30° is 10% higher than that of an LED without metal film and dielectric layer. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.82.Et Waveguides, couplers, and arrays
42.79.Dj Gratings
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μm

A. Wilk, M. El Gazouli, M. El Skouri, P. Christol, P. Grech, A. N. Baranov, and A. Joullié

Appl. Phys. Lett. 77, 2298 (2000); http://dx.doi.org/10.1063/1.1317537 (3 pages) | Cited 9 times

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Mid-infrared laser diodes with compressively strained InAsSb/InAs type-II slightly coupled quantum wells are reported. These lasers, grown on InAs by molecular-beam epitaxy, have emission wavelength near 3.5 μm. They exhibit pulsed operation up to 220 K, with at 90 K threshold current density of 150 A/cm2. Ridge lasers continuous wave (cw) operated up to 130 K with cw output power of 40 mW/A/facet and a characteristic temperature T0 = 40 K. © 2000 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

High-temperature optical gain of 980 nm InGaAs/AlGaAs quantum-well lasers

Federico Beffa, Heinz Jäckel, Martin Achtenhagen, Christoph Harder, and Daniel Erni

Appl. Phys. Lett. 77, 2301 (2000); http://dx.doi.org/10.1063/1.1317541 (3 pages) | Cited 6 times

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The optical modal gain of ridge-waveguide single-quantum-well InGaAs/AlGaAs diode lasers with an emission wavelength of 980 nm were measured up to a temperature of 250 °C. Comparisons of the obtained gain curves with a simple semiclassical model based on the single-band envelope function theory allows straightforward curve fitting of the gain as it is used, e.g., in numeric models. As a result a simple temperature dependence of the line shape function has been deduced. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

Dynamics of GaAs/AlGaAs microdisk lasers

K. J. Luo, J. Y. Xu, H. Cao, Y. Ma, S. H. Chang, S. T. Ho, and G. S. Solomon

Appl. Phys. Lett. 77, 2304 (2000); http://dx.doi.org/10.1063/1.1317544 (3 pages) | Cited 14 times

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Dynamic response of a GaAs/AlGaAs microdisk laser has been experimentally investigated using femtosecond optical pumping. Below the lasing threshold, the delay time of the emission pulse from the microdisk hardly changes with the pump power. Above the lasing threshold, the delay time is shortened dramatically, and it decreases with increasing the pump power. The theoretical simulation based on the rate equations reproduces the experimental observation after the effect of carrier diffusion is taken into account. The simulation result illustrates that the speed of a microdisk laser is limited mainly by the carrier diffusion in the disk plane. © 2000 American Institute of Physics.
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42.55.Sa Microcavity and microdisk lasers
42.55.Px Semiconductor lasers; laser diodes
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Two-dimensional phase-locked antiguided vertical-cavity surface-emitting laser arrays

D. Zhou and L. J. Mawst

Appl. Phys. Lett. 77, 2307 (2000); http://dx.doi.org/10.1063/1.1317545 (3 pages) | Cited 16 times

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4×4 antiguided phase-locked vertical-cavity surface-emitting laser (VCSEL) arrays have been fabricated by a selective etching process and metalorganic chemical vapor deposition regrowth. Stable, diffraction-limited output is observed corresponding to either in-phase or out-of-phase mode operation, depending on the interelement spacing width. Calculations indicate resonant leaky-wave coupling occurs for interelement spacings corresponding to an integral number of half-waves of the radiation leakage from each VCSEL region, and the use of interelement loss is effective in suppressing nonresonant modes. © 2000 American Institute of Physics.
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42.60.By Design of specific laser systems
81.65.Cf Surface cleaning, etching, patterning
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

A nearly diffraction limited surface emitting conjugated polymer laser utilizing a two-dimensional photonic band structure

S. Riechel, C. Kallinger, U. Lemmer, J. Feldmann, A. Gombert, V. Wittwer, and U. Scherf

Appl. Phys. Lett. 77, 2310 (2000); http://dx.doi.org/10.1063/1.1310207 (3 pages) | Cited 87 times

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We have fabricated a mechanically flexible conjugated polymer laser utilizing distributed feedback due to a two-dimensional photonic band structure. An ultraviolet-embossing process is used for nanopatterning a plastic substrate. On top we spin-coat a ladder-type poly(p-phenylene) as the active laser medium. Upon optical pumping, we observe a low threshold and nearly diffraction limited monomode laser emission perpendicular to the surface. Our results are explained within a Laue formulation for the feedback mechanism in the two-dimensional organic photonic crystal. © 2000 American Institute of Physics.
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42.60.By Design of specific laser systems
42.70.Qs Photonic bandgap materials
42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Jk Polymers and organics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
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