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16 Oct 2000

Volume 77, Issue 16, pp. 2437-2616

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Comment on “Low-temperature homoepitaxial growth on high-miscut Si(111) mediated by thin overlayers of Pb” [Appl. Phys. Lett. 75, 2954 (1999)]

P. G. Evans, O. D. Dubon, J. F. Chervinsky, F. Spaepen, and J. A. Golovchenko

Appl. Phys. Lett. 77, 2616 (2000); http://dx.doi.org/10.1063/1.1318930 (1 page)

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Abstract Unavailable
Show PACS
81.05.Cy Elemental semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
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