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16 Oct 2000

Volume 77, Issue 16, pp. 2437-2616

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Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs

C. K. Hyon, S. C. Choi, S.-H. Song, S. W. Hwang, M. H. Son, D. Ahn, Y. J. Park, and E. K. Kim

Appl. Phys. Lett. 77, 2607 (2000); http://dx.doi.org/10.1063/1.1318393 (3 pages) | Cited 20 times

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The application of atomic-force-microscope (AFM) direct patterning to the selective positioning of InAs quantum dots (QDs) on a (100) GaAs substrate has been proposed and experimentally implemented. The AFM direct patterning was used to generate various patterns of several tens of nanometers in size, and InAs QDs were subsequently grown by a metalorganic chemical vapor deposition technique. A nonuniform distribution of the QDs was observed near the patterns. The detailed shape of the QD distribution and the size of the QDs depended on the geometrical properties such as the sidewall angle, the spacing, and the width of the patterns. We have been able to ascertain, through our work, what growth conditions are necessary for QDs’ alignment along the patterns. © 2000 American Institute of Physics.
Show PACS
81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
85.40.Hp Lithography, masks and pattern transfer
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
07.79.Lh Atomic force microscopes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures

A. R. Stonas, P. Kozodoy, H. Marchand, P. Fini, S. P. DenBaars, U. K. Mishra, and E. L. Hu

Appl. Phys. Lett. 77, 2610 (2000); http://dx.doi.org/10.1063/1.1318726 (3 pages) | Cited 23 times

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A photoelectrochemical (PEC) wet-etching technique (backside-illuminated PEC) is described that utilizes the dopant or band-gap selectivity of PEC etching to fabricate deeply undercut structures. Lateral etch rates exceeding 5 μm/min have been observed, producing cantilevers in excess of 100μm in length. Dramatically different etch morphologies were noted between the frontside- and backside-illuminated etching, though dopant-dependent etch selectivities were maintained. © 2000 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
07.10.Cm Micromechanical devices and systems
68.35.B- Structure of clean surfaces (and surface reconstruction)
82.45.-h Electrochemistry and electrophoresis
82.50.-m Photochemistry

Self-healing effects in the fabrication process of photonic crystals

Takayuki Kawashima, Kenta Miura, Takashi Sato, and Shojiro Kawakami

Appl. Phys. Lett. 77, 2613 (2000); http://dx.doi.org/10.1063/1.1316070 (3 pages) | Cited 21 times

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We demonstrate a self-healing effect of unwanted defects in the autocloning process: autocloning is a previously proposed technique to fabricate multidimensional periodic nanostructures by stacking up corrugated multilayers. With the self-healing effect, aperiodic perturbations in the initial periodic shape of the structure immediately disappear and the surface shape becomes periodic in a few cycles of stacking. If the perturbations exist in photonic crystal, they cause light-scattering loss and also make the boundaries between photonic bands and band gaps unclear. In other words, they make the attenuation of light at the frequency in photonic band gaps weak. Consequently, to attain uniformity of the shape automatically with this effect is very important in the fabrication process for practical photonic crystal devices. In this letter, we verify this phenomenon experimentally, and discuss the mechanism by comparison with process simulation. © 2000 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
81.05.Cy Elemental semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
78.66.Db Elemental semiconductors and insulators
42.50.-p Quantum optics
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.46.-w Structure of nanoscale materials
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