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16 Oct 2000

Volume 77, Issue 16, pp. 2437-2616

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Longitudinal magnetic recording media with thermal stabilization layers

E. N. Abarra, A. Inomata, H. Sato, I. Okamoto, and Y. Mizoshita

Appl. Phys. Lett. 77, 2581 (2000); http://dx.doi.org/10.1063/1.1319183 (3 pages) | Cited 110 times

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We introduce promising longitudinal recording media with enhanced thermal stability compared to conventional media. The media consist of one or more magnetic layers disposed between the recording layer and the underlayer with the magnetization direction of the layers being antiparallel to the adjacent layer or layers. Antiferromagnetic coupling is induced through a thin Ru layer between the Co-based magnetic layers. Comparison with conventional media with the same remanence magnetization and thickness product reveals improved thermal stability and read-write properties for the proposed media. © 2000 American Institute of Physics.
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75.50.Ss Magnetic recording materials
68.60.Dv Thermal stability; thermal effects
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.15.Cd Deposition by sputtering
75.30.Et Exchange and superexchange interactions

Preparation of crack-free antiferroelectric PbZrO3 thin films by a two-step annealing process

L. B. Kong and J. Ma

Appl. Phys. Lett. 77, 2584 (2000); http://dx.doi.org/10.1063/1.1319184 (3 pages) | Cited 7 times

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Crack-free antiferroelectric PbZrO3(PZ) thin films were prepared by a two-step annealing technique via a modified sol-gel process. Although x-ray diffraction results showed that single phase of perovskite PbZrO3 was obtained in the thin films annealed at 550, 700, and 550 °C/700 °C, double P-E hysteresis loop indicating phase transformation from antiferroelectric to ferroelectric phase was only observed for the two-step annealed PZ thin film at room temperature, with a forward switching field (EAFE-FE) of 151 kV/cm, a backward switching field (EFE-AFE) of about 77 kV/cm, and saturated polarization of 54 μC/cm2. The dielectric constant and dielectric loss of the PZ film annealed at 700 °C are 260 and 0.04 at 1 kHz, respectively. The prevention of the PZ film from being cracking by the two-step annealing procedure is believed to be a result of the more stable property of the film caused by the 550 °C pre-annealing. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
68.60.Dv Thermal stability; thermal effects
77.80.Fm Switching phenomena
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
77.80.B- Phase transitions and Curie point
68.55.-a Thin film structure and morphology
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization
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