APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

30 Oct 2000

Volume 77, Issue 18, pp. 2783-2928

Page 1 of 2 Pages Next Page | Jump to Page
back to top
RSS Feeds

Temperature dependence of the threshold for laser emission in polymer microlasers

G. Ramos-Ortiz, Ch. Spiegelberg, N. Peyghambarian, and B. Kippelen

Appl. Phys. Lett. 77, 2783 (2000); http://dx.doi.org/10.1063/1.1320871 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We studied the temperature dependence of the laser emission threshold in microring polymer lasers. For microring lasers with diameters between 16 and 120 μm, a weak temperature dependence was observed when the temperature was varied between 300 and 10 K. These experimental results are explained within a four-level model. Our results suggest that a significant reduction of threshold can be achieved at low temperatures if the quality factor Q of the microcavities is improved. © 2000 American Institute of Physics.
Show PACS
42.55.Sa Microcavity and microdisk lasers
42.70.Jk Polymers and organics
42.55.Px Semiconductor lasers; laser diodes
42.70.Hj Laser materials
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission

Observation of excimer luminescence from electron-excited liquid xenon

A. S. Schüssler, J. Burghorn, P. Wyder, B. I. Lembrikov, and R. Baptist

Appl. Phys. Lett. 77, 2786 (2000); http://dx.doi.org/10.1063/1.1320870 (3 pages) | Cited 10 times

Full Text: Read Online (HTML) | Download PDF


See Also: Erratum

Show Abstract
This letter presents an experimental study of vacuum-ultraviolet luminescence from low-energy electron-excited liquid xenon. Our experimental results provide strong support for the theory by [E. B. Gordon, V. V. Khmelenko and O. S. Rzhevskii, Chem. Phys. Lett. 217, 605 (1994)] which considers the rare-gas-atom excitations to be the main reason for the electron drift-velocity saturation occurring at high-electric fields in the condensed rare gases. Furthermore, our results prove the existence of hot electrons in liquid xenon and show that electron-excited liquid xenon could serve as the active medium for a novel type of excimer laser as proposed by [E. B. Gordon, O. S. Rzhevsky, and V. V. Khmelenko, Quantum Electron. 24, 227 (1994)]. © 2000 American Institute of Physics.
Show PACS
78.60.Hk Cathodoluminescence, ionoluminescence
42.55.Lt Gas lasers including excimer and metal-vapor lasers
34.80.Gs Molecular excitation and ionization
33.50.Dq Fluorescence and phosphorescence spectra
72.20.Ht High-field and nonlinear effects

Selective transmission through very deep zero-order metallic gratings at microwave frequencies

H. E. Went, A. P. Hibbins, J. R. Sambles, C. R. Lawrence, and A. P. Crick

Appl. Phys. Lett. 77, 2789 (2000); http://dx.doi.org/10.1063/1.1320852 (3 pages) | Cited 70 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Zero-order metal grating structures are found to give extraordinary selective transmission at microwave frequencies through the resonant excitation of coupled surface waves. The metal slat structures with dielectric spacings as small as 250 μm strongly transmit wavelengths of several millimeters. A simple interpretation of these novel results which treats the deep grating structures as “filled” Fabry–Perot cavity systems gives model transmissivities which agree very well with the experimental data. © 2000 American Institute of Physics.
Show PACS
78.70.Gq Microwave and radio-frequency interactions
41.20.Jb Electromagnetic wave propagation; radiowave propagation
42.79.Dj Gratings
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Latency effects and periodic structures in light-induced frustrated etching of Fe:doped LiNbO3

Alexander J. Boyland, Sakellaris Mailis, Ian E. Barry, Robert W. Eason, and Malgosia Kaczmarek

Appl. Phys. Lett. 77, 2792 (2000); http://dx.doi.org/10.1063/1.1320850 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single crystals of z-cut 0.05% Fe:doped lithium niobate (Fe:LiNbO3), have been etched in a mixture of HF and HNO3 acids, under simultaneous illumination from a ∼100 mW 488 nm wavelength Ar ion laser light source, focused to power densities of ∼50 W cm−2 at the crystal surface exposed to the etchant. Etching is partially inhibited in illuminated regions, and the degree of inhibition shows a systematic latency: sites illuminated early in the etch run resist further etching even after the light is removed. Etched structures additionally exhibit regular periodic features of ∼0.5 μm scale length. Details of these structures are shown, and the latent etching effect is discussed. © 2000 American Institute of Physics.
Show PACS
81.65.Cf Surface cleaning, etching, patterning
79.20.Ds Laser-beam impact phenomena
42.70.Gi Light-sensitive materials
68.35.B- Structure of clean surfaces (and surface reconstruction)

Luminescence of porous silicon/terbium organic complex hybrid

J. X. Meng, T. K. Li, W. K. Wong, and K. W. Cheah

Appl. Phys. Lett. 77, 2795 (2000); http://dx.doi.org/10.1063/1.1320843 (3 pages) | Cited 7 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A simple but effective doping method to introduce organometallic complexes into porous silicon was developed. Upon hybridization with a Tb-sulfosalicylic complex, porous silicon emits bright green emission when excited with an UV light. The photoluminescence spectrum shows that only Tb3+ ions emit efficiently while the luminescence of porous silicon and organic ligands are almost thoroughly quenched. Based on the Fourier transform infrared and photoluminescence measurements, it is proposed that Tb3+ complex was physically adsorbed in the pores of porous silicon. The origin of Tb3+ PL was also elucidated from the PL excitation spectrum measurement. © 2000 American Institute of Physics.
Show PACS
78.55.Mb Porous materials
78.55.Kz Solid organic materials
61.72.uf Ge and Si
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
78.30.Am Elemental semiconductors and insulators
78.30.Jw Organic compounds, polymers
61.43.Gt Powders, porous materials

Inverse scattering for near-field microscopy

P. Scott Carney and John C. Schotland

Appl. Phys. Lett. 77, 2798 (2000); http://dx.doi.org/10.1063/1.1320844 (3 pages) | Cited 32 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We derive the analytic singular value decomposition of the linearized scattering operator for scalar waves. This representation leads to a robust inversion formula for the inverse scattering problem in the near zone. Applications to near-field optics are described. © 2000 American Institute of Physics.
Show PACS
42.25.Fx Diffraction and scattering
07.79.Fc Near-field scanning optical microscopes
02.10.Ud Linear algebra
02.10.Xm Multilinear algebra
42.30.Wb Image reconstruction; tomography
42.25.Dd Wave propagation in random media

Freeze-out of difference-phonon modes in ZnTe and its application in detection of THz pulses

M. Schall and P. Uhd Jepsen

Appl. Phys. Lett. 77, 2801 (2000); http://dx.doi.org/10.1063/1.1321734 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Generation by optical rectification and detection by electro-optic sampling of freely propagating subpicosecond electromagnetic pulses (terahertz pulses) in ZnTe is limited by two broad difference-phonon absorption bands in the spectral region below the transverse optical resonance at 5.32 THz. In this letter, we show that, at temperatures below 80 K, these difference modes are frozen out and consequently ZnTe becomes completely transparent within our detection bandwidth. We utilize this effect to obtain a three-fold increase in detection efficiency at frequencies above 3 THz in a thin ZnTe detector operated at 80 K, compared to the performance at room temperature. © 2000 American Institute of Physics.
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.20.Jq Electro-optical effects

Imaging spectroscopy of quantum wells with interfacial fluctuations: A theoretical description

Omar Di Stefano, Salvatore Savasta, Giovanna Martino, and Raffaello Girlanda

Appl. Phys. Lett. 77, 2804 (2000); http://dx.doi.org/10.1063/1.1322057 (3 pages) | Cited 12 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present a theoretical approach for the simulation of scanning local optical spectroscopy in disordered quantum wells (QWs). After a single realization of the disorder potential, we calculate spectra on a mesh of points on the QW plane, thus obtaining a three-dimensional matrix of data from which we construct two-dimensional spectroscopic images of excitons laterally localized at interface fluctuations. Our simulations are in close agreement with the experimental findings, and contribute to the interpretation of spatially resolved spectra in QWs. © 2000 American Institute of Physics.
Show PACS
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
07.60.Rd Visible and ultraviolet spectrometers

Light-emission properties in nanocrystalline BaTiO3

Jian Yu, Jinglan Sun, Junhao Chu, and Dingyuan Tang

Appl. Phys. Lett. 77, 2807 (2000); http://dx.doi.org/10.1063/1.1322376 (3 pages) | Cited 22 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter reports photoluminescence properties of nanocrystalline BaTiO3. Two intense emission bands centered at 543 and 694 nm and a weak one at 574 nm have been observed at room temperature. The change of luminescence peak with different heat treatments correlates to the evolution of Ti4+ defects in the nanocrystalline BaTiO3 matrice. The light-emission mechanism is explained within the framework of self-trapped excitons by combining quantum-size confinement and dielectric confinement effects. © 2000 American Institute of Physics.
Show PACS
78.55.Hx Other solid inorganic materials
71.35.Aa Frenkel excitons and self-trapped excitons

Selective regrowth of Al0.30Ga0.70N p–i–n photodiodes

C. J. Collins, T. Li, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, and J. C. Campbell

Appl. Phys. Lett. 77, 2810 (2000); http://dx.doi.org/10.1063/1.1322374 (3 pages) | Cited 30 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the device performance of selective-area regrown Al0.30Ga0.70N p–i–n photodiodes. Tensile strain, induced by the lattice mismatch between AlxGa1−xN and GaN, leads to cracking above the critical thickness in layers with high aluminum concentration. Selective-area regrown devices with ⩽70 μm diameters were fabricated without signs of cracking. These devices show low dark current densities with flat photoresponse and a forward turn-on current of ∼25 A/cm2 at 7 V. A quantum efficiency greater than 20% was achieved at zero bias with a peak wavelength of λ = 315 nm. A differential resistance of R0 = 3.46×1014 Ω and a detectivity of D∗ = 4.85×1013 cm Hz1/2 W−1 was demonstrated. © 2000 American Institute of Physics.
Show PACS
81.05.Ea III-V semiconductors
85.60.Dw Photodiodes; phototransistors; photoresistors
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Low-loss channel waveguides with two-dimensional photonic crystal boundaries

C. J. M. Smith, H. Benisty, S. Olivier, M. Rattier, C. Weisbuch, T. F. Krauss, R. M. De La Rue, R. Houdré, and U. Oesterle

Appl. Phys. Lett. 77, 2813 (2000); http://dx.doi.org/10.1063/1.1322367 (3 pages) | Cited 86 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have used transmission measurements to estimate the propagation loss of submicron channels defined in two-dimensional photonic crystals patterned into a Ga(Al)As waveguide. The measured propagation loss of the fundamental mode is indistinguishable from the material absorption, setting an upper limit of 50 cm−1 (2 dB per 100 μm). We also find that, provided the etching is deep enough, propagation losses of these photonic crystal waveguides are lower than those of ridge waveguides etched in the same run. © 2000 American Institute of Physics.
Show PACS
42.79.Gn Optical waveguides and couplers
42.70.Qs Photonic bandgap materials
78.66.Fd III-V semiconductors

Long-lived quantum-confined infrared transitions in CdSe nanocrystals

D. S. Ginger, A. S. Dhoot, C. E. Finlayson, and N. C. Greenham

Appl. Phys. Lett. 77, 2816 (2000); http://dx.doi.org/10.1063/1.1322369 (3 pages) | Cited 13 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present quasi-steady-state photoinduced absorption measurements on thin films of CdSe nanocrystals dispersed in a polystyrene matrix. For nanocrystals treated with pyridine we observe an intense, size-dependent absorption peaking in the mid-infrared when the samples are irradiated with visible light. This infrared absorption is associated with a size-dependent bleach in the visible, near the peak of the first excitonic absorption. We attribute the infrared absorption to an intraband electron transition in the quantum dots and measure the lifetime of the absorbing state to be 1.0 ms at 295 K. © 2000 American Institute of Physics.
Show PACS
78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
78.40.Fy Semiconductors
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency

Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition

H. Y. Huang, W. C. Lin, W. H. Lee, C. K. Shu, K. C. Liao, W. K. Chen, M. C. Lee, W. H. Chen, and Y. Y. Lee

Appl. Phys. Lett. 77, 2819 (2000); http://dx.doi.org/10.1063/1.1316075 (3 pages) | Cited 9 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have studied the As doping effects on the optical characteristics of GaN films by time-integrated photoluminescence and time-resolved photoluminescence. When As is incorporated into the film, the localized defect levels and donor–acceptor pair transition become less resolved. The recombination lifetime of neutral-donor-bound exciton (I2) transition in undoped GaN increases with temperature as T1.5. However, the I2 recombination lifetime in As-doped GaN first decreases exponentially from 98 to 41 ps between 12 and 75 K, then increases gradually to 72 ps at 250 K. Such a difference is related to the isoelectronic As impurities in GaN, which generate nearby shallow levels that dominate the recombination process. © 2000 American Institute of Physics.
Show PACS
71.55.Eq III-V semiconductors
78.66.Fd III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics
61.72.uj III-V and II-VI semiconductors
78.55.Cr III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson

Appl. Phys. Lett. 77, 2822 (2000); http://dx.doi.org/10.1063/1.1319505 (3 pages) | Cited 75 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Indium–gallium nitride (InxGa1−xN) single-quantum-well (SQW) light emitting diodes (LEDs), grown by metalorganic chemical vapor deposition on sapphire, were transferred onto Si substrates. The thin-film InxGa1−xN SQW LED structures were first bonded onto a n+-Si substrate using a transient-liquid-phase Pd–In wafer-bonding process followed by a laser lift-off technique to remove the sapphire growth substrate. Individual, 250×250 μm2, LEDs with a backside contact through the n+-Si substrate were then fabricated. The LEDs had a typical turn-on voltage of 2.5 V and a forward current of 100 mA at 5.4 V. The room-temperature emission peak for the InxGa1−xN SQW LEDs was centered at 455 nm with a full width at half maximum of 19 nm. © 2000 American Institute of Physics.
Show PACS
85.60.Jb Light-emitting devices
81.05.Ea III-V semiconductors
42.62.Cf Industrial applications
back to top
RSS Feeds

Detection of localized hot electrons in low-pressure large-area microwave discharges

Tibor Terebessy, Masashi Kando, and Jozef Kudela

Appl. Phys. Lett. 77, 2825 (2000); http://dx.doi.org/10.1063/1.1320848 (3 pages) | Cited 13 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A localized hot-electron region was observed in low-pressure (<3 mTorr) large-area microwave discharges. The region appears in the vicinity of the waveguiding plasma–dielectric interface in the place of critical plasma density. The existence of localized hot electrons is explained on the basis of transit time heating in the resonantly enhanced electric field. The phenomenon provides experimental evidence that the plasma resonance region plays an active role in heating mechanism in low-pressure microwave discharges. © 2000 American Institute of Physics.
Show PACS
52.80.Pi High-frequency and RF discharges
52.50.Gj Plasma heating by particle beams
52.70.Ds Electric and magnetic measurements
52.40.Db Electromagnetic (nonlaser) radiation interactions with plasma
52.40.Hf Plasma-material interactions; boundary layer effects
52.25.Fi Transport properties

Effect of higher-silane formation on electron temperature in a silane glow-discharge plasma

Madoka Takai, Tomonori Nishimoto, Michio Kondo, and Akihisa Matsuda

Appl. Phys. Lett. 77, 2828 (2000); http://dx.doi.org/10.1063/1.1322373 (3 pages) | Cited 41 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electron temperature measured by an optical-emission spectroscopy shows a strong substrate temperature dependence in a silane glow-discharge plasma. The electron temperature increases with time after turning on the plasma at a low substrate temperature of 150 °C, while it stays constant at a high substrate temperature of 400 °C. The electron temperature is drastically reduced when the source gas silane is diluted with hydrogen at low substrate temperatures. These results suggest that the electron temperature in silane plasma is strongly affected by an electron-attachment process to higher-order silane molecules whose formation reactions show negative activation energies with gas temperature and are also suppressed by the presence of hydrogen molecules. © 2000 American Institute of Physics.
Show PACS
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.-b Plasma properties
52.80.Hc Glow; corona
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
34.80.Lx Recombination, attachment, and positronium formation
back to top
RSS Feeds

Smallest diameter carbon nanotubes

H. Y. Peng, N. Wang, Y. F. Zheng, Y. Lifshitz, J. Kulik, R. Q. Zhang, C. S. Lee, and S. T. Lee

Appl. Phys. Lett. 77, 2831 (2000); http://dx.doi.org/10.1063/1.1320869 (3 pages) | Cited 31 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Mass-selected carbon ion beam deposition (MSIBD) was used to demonstrate that the diameter of a carbon nanotube could be as small as 0.4 nm, the theoretical limit predicted but never experimentally reached so far. The deposition was performed at an elevated temperature much lower than the high temperatures (800–1000 °C) needed for deposition of carbon nanotubes by conventional methods. High-resolution transmission electron microscopy showed that the combination of the stress induced by the ion impact and the C migration at the temperature applied formed graphitic sheets with their normal (c axis) parallel to the surface of the silicon substrate. Some sheets closed to form multiwall nanotubes. The smallest diameter of the innermost tube was found to be 0.4 nm. The novel use of MSIBD (a pure method, catalyst free, low deposition temperature, easily applied to large surfaces without surface pretreatment capable of pattern-writing) may significantly advance the carbon nanostructure technology. © 2000 American Institute of Physics.
Show PACS
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
81.05.ub Fullerenes and related materials
81.15.Jj Ion and electron beam-assisted deposition; ion plating

In situ scanning tunneling microscopic study of polymerization of C60 clusters induced by electron injection from the probe tips

Y. Nakamura, Y. Mera, and K. Maeda

Appl. Phys. Lett. 77, 2834 (2000); http://dx.doi.org/10.1063/1.1320865 (3 pages) | Cited 18 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Polymerization of C60 clusters epitaxially grown on Si(111)-(7×7) substrates was found to be induced by electron injection from the probe tips of scanning tunneling microscopes (STM) as the sample bias was increased from +4.0 to +5.5 V, exhibiting an evolution behavior characterized by an incubation, a linear growth, and a saturation. The incubation time and the growth rate are dependent greatly on the sample site, which is explained by a model taking into account the pre-existing stress as the driving force of the polymerization and the internal stress built up as a consequence of polymerization producing a stress for backward reactions. © 2000 American Institute of Physics.
Show PACS
61.48.-c Structure of fullerenes and related hollow and planar molecular structures
81.05.ub Fullerenes and related materials
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
82.35.-x Polymers: properties; reactions; polymerization
61.82.Rx Nanocrystalline materials
82.50.-m Photochemistry
68.55.Nq Composition and phase identification
61.80.Fe Electron and positron radiation effects

Photoluminescence of InAs quantum dots grown on GaAs surface

J. Z. Wang, Z. Yang, C. L. Yang, and Z. G. Wang

Appl. Phys. Lett. 77, 2837 (2000); http://dx.doi.org/10.1063/1.1320854 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
InAs quantum dots (QDs) grown on GaAs surface are investigated. The observed abnormal photoluminescence (PL) properties, including extremely sharp high-energy peaks, almost temperature-independent linewidth, and fast thermal quenching, are discussed in terms of the strong quantum confinement effects due to the absence of a cap layer and the lack of carrier redistribution channel caused by the small number of QDs capable of contributing to PL and the high-density surface defects. © 2000 American Institute of Physics.
Show PACS
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Characterization of the natural barriers of intergranular tunnel junctions: Cr2O3 surface layers on CrO2 nanoparticles

Jianbiao Dai, Jinke Tang, Huiping Xu, Leonard Spinu, Wendong Wang, Kaiying Wang, Amar Kumbhar, Min Li, and Ulrike Diebold

Appl. Phys. Lett. 77, 2840 (2000); http://dx.doi.org/10.1063/1.1320845 (3 pages) | Cited 42 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Cold-pressed powder compacts of CrO2 show large negative magnetoresistance (MR) due to intergranular tunneling. Powder compacts made from needle-shaped nanoparticles exhibit MR of about 28% at 5 K. Temperature dependence of the resistivity indicates that the Coulomb blockade intergranular tunneling is responsible for the conductance at low temperature. In this letter we report direct observation and characterization of the microstructure of the intergranular tunnel barriers, using transmission electron microscopy, x-ray diffraction (XRD), and x-ray photoelectron spectroscopy (XPS). A very thin native oxide layer with a thickness of 1–3 nm on the surface of CrO2 powders has been observed. The composition and crystal structure of this surface layer has been determined to be Cr2O3 by XPS and XRD. The dense and uniform Cr2O3 surface layers play an ideal role of tunnel barriers in the CrO2 powder compacts. © 2000 American Institute of Physics.
Show PACS
75.50.Kj Amorphous and quasicrystalline magnetic materials
75.45.+j Macroscopic quantum phenomena in magnetic systems
72.20.My Galvanomagnetic and other magnetotransport effects
68.35.Dv Composition, segregation; defects and impurities
61.72.Mm Grain and twin boundaries
75.50.Dd Nonmetallic ferromagnetic materials
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
75.50.Tt Fine-particle systems; nanocrystalline materials

Thermal stress and glass transition of ultrathin polystyrene films

Jie-Hua Zhao, Michael Kiene, Chuan Hu, and Paul S. Ho

Appl. Phys. Lett. 77, 2843 (2000); http://dx.doi.org/10.1063/1.1322049 (3 pages) | Cited 17 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The thermal stress of thin and ultrathin polystyrene (PS) films on Si substrate has been studied and the glass transition temperature (Tg) is determined from the thermal stress data. Tg of PS turned out to be thickness independent for thick films but decreases when the film thickness is comparable to the end-to-end distance of the polymer chains (<100 nm). The thermal stress level and the slope of the stress temperature curve of the film also decrease as the film thickness decreases. The slope reduction indicates that the product of the biaxial modulus E/(1−ν) and the coefficient of thermal expansion (CTE) of the film decreases with film thickness. Assuming that the CTE increases for ultrathin films, the modulus is found to decrease significantly with respect to the bulk value. © 2000 American Institute of Physics.
Show PACS
68.60.Dv Thermal stability; thermal effects
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
68.55.-a Thin film structure and morphology
65.40.De Thermal expansion; thermomechanical effects
61.41.+e Polymers, elastomers, and plastics
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations

Direct observation of stacking fault nucleation in the early stage of ZnSe/GaAs pseudomorphic epitaxial layer growth

N. Wang, K. K. Fung, and I. K. Sou

Appl. Phys. Lett. 77, 2846 (2000); http://dx.doi.org/10.1063/1.1321732 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The nucleation of stacking faults in the initial stage of growth of ZnSe/GaAs(001) epilayers has been studied by high-resolution transmission electron microscopy. Stacking faults have been observed to nucleate on the {111} planes on the slopes of ZnSe islands and hang over the adjacent (001) surface. The image details of a V-shaped fault originating from a sharp tip at a later stage of growth is in good agreement with the simulated image of stacking faults emerging from a dimer array of three chains. This gives support to residual dimer array on the 2×1 reconstructed (001) surface as the origin of stacking faults in ZnSe epilayers. © 2000 American Institute of Physics.
Show PACS
81.05.Dz II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Nn Stacking faults and other planar or extended defects
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Room-temperature intense emission at 1534 nm in Er-doped Cd3Al2Si3O12 glass

Huang Lihui, Liu Xingren, Lin Hai, and Lin Jiuling

Appl. Phys. Lett. 77, 2849 (2000); http://dx.doi.org/10.1063/1.1322375 (3 pages) | Cited 5 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this work, a promising solid-state laser material, Er-doped cadmium aluminum silicate glass, has been synthesized by solid-state reaction. Very intense emission at 1534 nm, corresponding to the 4I13/2→4I15/2 transition of Er3+ ions, was observed upon both 488 nm Ar+ laser and 632.8 nm He–Ne laser excitations at room temperature. Possible cross-relaxation processes in the glass are discussed. © 2000 American Institute of Physics.
Show PACS
42.70.Hj Laser materials
78.55.Hx Other solid inorganic materials
42.55.Rz Doped-insulator lasers and other solid state lasers
78.45.+h Stimulated emission

Oblique alignment of columns of self-organized Ge/Si(001) islands in multilayer structure

C. J. Huang, D. Z. Li, B. W. Cheng, J. Z. Yu, and Q. M. Wang

Appl. Phys. Lett. 77, 2852 (2000); http://dx.doi.org/10.1063/1.1322372 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Ge/Si multilayer structures with a bimodal distribution of the island spacing in the first layer have been investigated by atomic-force microscopy and transmission electron microscopy. Besides the vertical alignment, some oblique alignments of stacked islands are observed. The presence of the elastic interaction between islands is responsible for the oblique alignment of stacked islands. © 2000 American Institute of Physics.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
back to top
RSS Feeds

Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

Anri Nakajima, Takashi Yoshimoto, Toshiro Kidera, Katsunori Obata, Shin Yokoyama, Hideo Sunami, and Masataka Hirose

Appl. Phys. Lett. 77, 2855 (2000); http://dx.doi.org/10.1063/1.1320847 (3 pages) | Cited 14 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An extremely thin ( ∼ 0.4 nm) silicon-nitride layer has been deposited on thermally grown SiO2 by an atomic-layer-deposition (ALD) technique. The boron penetration through the stacked gate dielectrics has dramatically been suppressed, and the reliability has been significantly improved, as confirmed by capacitance–voltage, gate-current–gate-voltage, and time-dependent dielectricbreakdown characteristics. The ALD technique allows us to fabricate an extremely thin, very uniform silicon-nitride layer with atomic-scale control. © 2000 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
77.22.Jp Dielectric breakdown and space-charge effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close