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3 Jul 2000

Volume 77, Issue 1, pp. 1-153

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Comment on “Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon” [Appl. Phys. Lett. 75, 1279 (1999)]

V. C. Venezia, R. A. Brown, R. Kalyanaraman, T. E. Haynes, O. W. Holland, and J. S. Williams

Appl. Phys. Lett. 77, 151 (2000); http://dx.doi.org/10.1063/1.126906 (2 pages) | Cited 1 time

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Abstract Unavailable
Show PACS
61.72.uf Ge and Si
81.05.Cy Elemental semiconductors
61.80.Jh Ion radiation effects
61.72.J- Point defects and defect clusters
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
61.72.Cc Kinetics of defect formation and annealing
81.40.Gh Other heat and thermomechanical treatments
61.72.Yx Interaction between different crystal defects; gettering effect
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Reply to “Comment on ‘Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon’ ” [Appl. Phys. Lett. 77, 151 (2000)]

R. Kögler, A. Peeva, W. Anwand, G. Brauer, W. Skorupa, P. Werner, and U. Gösele

Appl. Phys. Lett. 77, 153 (2000); http://dx.doi.org/10.1063/1.126907 (1 page)

Full Text: Read Online (HTML) | Download PDF

Abstract Unavailable
Show PACS
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
61.82.Fk Semiconductors
78.70.Bj Positron annihilation
61.72.Yx Interaction between different crystal defects; gettering effect
61.80.Jh Ion radiation effects
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
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