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3 Jul 2000

Volume 77, Issue 1, pp. 1-153

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Reproducible switching effect in thin oxide films for memory applications

A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer

Appl. Phys. Lett. 77, 139 (2000); http://dx.doi.org/10.1063/1.126902 (3 pages) | Cited 403 times

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Thin oxide films with perovskite or related structures and with transition metal doping show a reproducible switching in the leakage current with a memory effect. Positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns. The ratio between these two states is typically about 20 but can exceed six orders of magnitude. Once a low-impedance state has been achieved it persists without a power connection for months, demonstrating the feasibility of nonvolatile memory elements. Even multiple levels can be addressed to store two bits in such a simple capacitor-like structure. © 2000 American Institute of Physics.
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73.61.Ng Insulators
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