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3 Jul 2000

Volume 77, Issue 1, pp. 1-153

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Influences of interfacial intrinsic low-dielectric layers on the dielectric properties of sputtered (Ba,Sr)TiO3 thin films

Byoung Taek Lee and Cheol Seong Hwang

Appl. Phys. Lett. 77, 124 (2000); http://dx.doi.org/10.1063/1.126897 (3 pages) | Cited 56 times

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The influences of low-dielectric interfacial layers on the dielectric properties of Pt/(Ba,Sr)TiO3/Pt capacitors were investigated before and after postannealing. The interfacial layer is believed to be the intrinsic dead layer (low-dielectric layer) due to the termination of chemical bonds of the (Ba,Sr)TiO3 (BST) material at the interfaces. The dielectric constant of the capacitor decreases with decreasing BST film thickness owing to the low dielectric constant of the dead layer. The dead-layer capacitance varies with processes such as film deposition temperature, and postannealing. Higher deposition temperatures result in a larger dead-layer capacitance and a higher bulk dielectric constant. Although annealing under a N2 atmosphere is less effective in reducing the dead-layer effect than under an O2 atmosphere, it is more effective in increasing the bulk dielectric constant. Therefore, a N2, rather than an O2 atmosphere, results in a larger increase in the overall dielectric constant. © 2000 American Institute of Physics.
Show PACS
84.32.Tt Capacitors
73.40.Rw Metal-insulator-metal structures
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
61.72.Cc Kinetics of defect formation and annealing

Vacancy formation in (Pb,La)(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset

T. Friessnegg, S. Aggarwal, R. Ramesh, B. Nielsen, E. H. Poindexter, and D. J. Keeble

Appl. Phys. Lett. 77, 127 (2000); http://dx.doi.org/10.1063/1.126898 (3 pages) | Cited 65 times

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Vacancy-related defect profiles have been measured for La0.5Sr0.5CoO3/(Pb0.9La0.1)(Zr0.2Ti0.8)O3/La0.5Sr0.5CoO3 ferroelectric capacitors using a variable-energy positron beam. By varying the layer thickness and the postgrowth processing in a reducing ambient, a capacitor showing oxygen deficiency dominantly in the top electrode and one with deficiency in both electrodes were produced. The capacitor with an asymmetric defect profile showed a voltage offset polarization–voltage hysteresis loop, that with a symmetric distribution of vacancy-related defects showed no offset. These results are discussed in the context of current models for imprint. © 2000 American Institute of Physics.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
61.72.J- Point defects and defect clusters
78.70.Bj Positron annihilation
77.80.Dj Domain structure; hysteresis

High ε gate dielectrics Gd2O3 and Y2O3 for silicon

J. Kwo, M. Hong, A. R. Kortan, K. T. Queeney, Y. J. Chabal, J. P. Mannaerts, T. Boone, J. J. Krajewski, A. M. Sergent, and J. M. Rosamilia

Appl. Phys. Lett. 77, 130 (2000); http://dx.doi.org/10.1063/1.126899 (3 pages) | Cited 118 times

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We report on growth and characterization of both epitaxial and amorphous films Gd2O3 of (ε = 14) and Y2O3(ε = 18) as the gate dielectrics for Si prepared by ultrahigh vacuum vapor deposition. The use of vicinal Si (100) substrates is key to the growth of (110) oriented, single-domain films in the Mn2O3 structure. Typical electrical leakage results are 10−3 A/cm2 at 1 V for single domain epitaxial Gd2O3 and Y2O3 films with an equivalent SiO2 thickness, teq of 15 Å, and 10−6 A/cm2 at 1 V for smooth amorphous Y2O3 films (ε = 18) with a teq of only 10 Å. For all the Gd2O3 films, the absence of SiO2 segregation at the interface is established from infrared absorption measurements. © 2000 American Institute of Physics.
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77.55.-g Dielectric thin films
61.43.-j Disordered solids
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.B- Structure of clean surfaces (and surface reconstruction)

Relaxational polarization dynamics in soft ferroelectrics

Yun-Han Chen and Dwight Viehland

Appl. Phys. Lett. 77, 133 (2000); http://dx.doi.org/10.1063/1.126900 (3 pages) | Cited 18 times

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Investigations of the frequency dependence of the P–E (polarization versus field) and ε–E (strain versus field) behavior have been performed on soft 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 polycrystalline ferroelectrics at various maximum field strengths below and above that of the coercive field (Ec). For E<Ec, a strong relaxational polarization was observed. At low frequencies, in this field range, P–E curves indicative of polarization switching were observed with an apparent remanence, however at higher frequencies near-linear P–E behavior was found. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.22.Gm Dielectric loss and relaxation
77.80.Fm Switching phenomena

Imaging of acoustic fields in bulk acoustic-wave thin-film resonators

H. Safar, R. N. Kleiman, B. P. Barber, P. L. Gammel, J. Pastalan, H. Huggins, L. Fetter, and R. Miller

Appl. Phys. Lett. 77, 136 (2000); http://dx.doi.org/10.1063/1.126901 (3 pages) | Cited 7 times

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By using an atomic-force-microscope-based technique, we image the vibration of high-frequency, bulk-mode, thin-film resonators. Our experimental technique is capable of monitoring the vibration of these devices over a broad frequency range, from 1 MHz to beyond 10 GHz, allowing us to obtain quantitative measurements of the piezoelectric properties of thin-film materials in that frequency range. This technique allows us to map the complex vibration modes of a new generation of high-frequency bulk piezoelectric resonators, revealing the presence of vibration patterns of very different characteristic lengths. © 2000 American Institute of Physics.
Show PACS
43.58.Kr Spectrum and frequency analyzers and filters; acoustical and electrical oscillographs; photoacoustic spectrometers; acoustical delay lines and resonators
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
43.40.Yq Instrumentation and techniques for tests and measurement relating to shock and vibration, including vibration pickups, indicators, and generators, mechanical impedance
07.79.Lh Atomic force microscopes
84.40.-x Radiowave and microwave (including millimeter wave) technology
43.35.Yb Ultrasonic instrumentation and measurement techniques
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