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3 Jul 2000

Volume 77, Issue 1, pp. 1-153

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On the band gap anomaly in I–III–VI2, I–III3–VI5, and I–III5–VI8 families of Cu ternaries

S. M. Wasim, C. Rincón, G. Marín, and J. M. Delgado

Appl. Phys. Lett. 77, 94 (2000); http://dx.doi.org/10.1063/1.126888 (3 pages) | Cited 18 times

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The experimentally observed energy band gap difference (ΔE1) between the I–III3–VI5 and I–III–VI2 and the energy band gap difference (ΔE2) between the I–III5–VI8 and I–III–VI2 phases of Cu–In–Se, Cu–Ga–Se, Cu–In–Te, and Cu–Ga–Te systems is explained in terms of the relative shift of the conduction band minimum (CBM) and the valence band maximum (VBM) caused due to the presence of the ordered VCu and [In(Ga)Cu+2+2 VCu−1] defect pair and to the effect of the p–d hybridization. The nearly linear variation of ΔE1 and ΔE2 with p–d hybridization of the corresponding I–III–VI2 phase suggests that in selenides the lowering of the VBM predominates over that of the CBM. In the case of the Cu–In–Te system, they are very near the same magnitude, whereas in Cu–Ga–Te the lowering of the CBM predominates over that of the VBM. © 2000 American Institute of Physics.
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71.20.Nr Semiconductor compounds

Exploring the effects of tensile and compressive strain on two-dimensional electron gas properties within InGaN quantum wells

S. F. LeBoeuf, M. E. Aumer, and S. M. Bedair

Appl. Phys. Lett. 77, 97 (2000); http://dx.doi.org/10.1063/1.126889 (3 pages) | Cited 9 times

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With the advent of high-quality AllnGaN quaternary cladding, InGaN quantum wells (QWs) have now been studied under both compressive and tensile strain, as well as no strain at all! This has allowed the experimental investigation of the two-dimensional electron gas (2DEG) properties within InGaN QWs that have been subjected to a full range of strain, opening the doors to a new realm of strain engineering. We present the capacitance–voltage-derived 2DEG properties of several In0.08Ga0.92N QWs subject to various degrees of strain. Strained In0.08Ga0.92N QWs clad with GaN exhibit better 2DEG confinement than their unstrained Al0.24In0.09Ga0.67N-clad counterparts. For the case of compressive-strained QWs, it was found that the peak 2DEG concentration increases linearly with well width. In contrast, such dependence was not observed for the case of unstrained QWs with lattice-matched cladding. Of further interest, the 2DEGs for compressive and tensile In0.08Ga0.92N QWs are localized at opposite interfaces, which is attributed to strain-induced piezoelectric fields pointing in opposite directions. © 2000 American Institute of Physics.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors
77.65.Ly Strain-induced piezoelectric fields
68.35.Gy Mechanical properties; surface strains

Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells

M. K. Herndon, W. C. Bradford, R. T. Collins, B. E. Hawkins, T. F. Kuech, D. J. Friedman, and S. R. Kurtz

Appl. Phys. Lett. 77, 100 (2000); http://dx.doi.org/10.1063/1.126890 (3 pages) | Cited 3 times

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Near-field scanning optical microscopy (NSOM) was used to study cleaved edges of GaAs solar cell devices. Using visible light for excitation, the NSOM acquired spatially resolved traces of the photocurrent response across the various layers in the device. For excitation energies well above the band gap, carrier recombination at the cleaved surface had a strong influence on the photocurrent signal. Decreasing the excitation energy, which increased the optical penetration depth, allowed the effects of surface recombination to be separated from collection by the pn junction. Using this approach, the NSOM measurements directly observed the effects of a buried minority carrier reflector/passivation layer. © 2000 American Institute of Physics.
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84.60.Jt Photoelectric conversion
07.79.Fc Near-field scanning optical microscopes
72.40.+w Photoconduction and photovoltaic effects
73.25.+i Surface conductivity and carrier phenomena
81.65.Rv Passivation

n-Si/SiO2/Si heterostructure barrier varactor diode design

Y. Fu, M. Mamor, M. Willander, S. Bengtsson, and L. Dillner

Appl. Phys. Lett. 77, 103 (2000); http://dx.doi.org/10.1063/1.126891 (3 pages) | Cited 1 time

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Symmetric C–V and antisymmetric I–V characteristics are essential for a heterostructure barrier varactor (HBV) to generate odd harmonics in a frequency multiplier. Practically high multiplier efficiency is obtained when the shape of the C–V characteristic is sharp near zero bias and the conduction current is low. Here we present the design of an n-type Si/SiO2/Si-based HBV and its state-of-the-art device performance. Self-consistent solutions of the Schrödinger and Poisson equations show a drastic decrease of the conduction current due to the large electron effective mass and the SiO2 barrier height. The shape of the C–V curve can be easily tuned by modifying the thickness of the SiO2 layer. By the techniques compatible with the conventional Si technology, a Si/SiO2/Si varactor junction (having a SiO2 layer of 20 nm) has been processed and the device characteristics are very promising. © 2000 American Institute of Physics.
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85.30.Kk Junction diodes
84.32.Tt Capacitors
73.40.Ty Semiconductor-insulator-semiconductor structures
73.61.Cw Elemental semiconductors
84.30.-r Electronic circuits

Imaging of a silicon pn junction under applied bias with scanning capacitance microscopy and Kelvin probe force microscopy

G. H. Buh, H. J. Chung, C. K. Kim, J. H. Yi, I. T. Yoon, and Y. Kuk

Appl. Phys. Lett. 77, 106 (2000); http://dx.doi.org/10.1063/1.126892 (3 pages) | Cited 25 times

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Scanning capacitance microscopy (SCM) and Kelvin probe force microscopy (KPFM) are used to image the electrical structure of a silicon pn junction under applied bias. With SCM, the carrier density inside a diode is imaged directly. With KPFM, the surface potential distribution of an operating diode is measured, revealing different behavior from that in bulk. The surface potential drop is extended deep into the lightly p-doped region at reverse bias, reflecting the existence of the surface space-charge region as confirmed by the numerical simulation. © 2000 American Institute of Physics.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.At Surface states, band structure, electron density of states
85.30.Kk Junction diodes
85.30.De Semiconductor-device characterization, design, and modeling
77.22.Jp Dielectric breakdown and space-charge effects

Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells

Ü. Özgür, M. J. Bergmann, H. C. Casey, H. O. Everitt, A. C. Abare, S. Keller, and S. P. DenBaars

Appl. Phys. Lett. 77, 109 (2000); http://dx.doi.org/10.1063/1.126893 (3 pages) | Cited 12 times

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Subpicosecond wavelength-degenerate differential transmission optical spectroscopy was used to characterize the electron capture time in a 10-period InxGa1−xN multiple-quantum-well (MQW) structure. Photoluminescence and photoluminescence excitation spectroscopies demonstrated enhanced MQW emission for injection within ±50 meV of the barrier energy. Time-resolved differential transmission measurements for excitation in this region reveal efficient electron capture in the quantum wells with a time constant between 310 and 540 fs. A slower exponential relaxation, with strongly wavelength-dependent subnanosecond decay constants, is also observed. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.47.-p Spectroscopy of solid state dynamics

Energy dependence of transient enhanced diffusion and defect kinetics

Hugo Saleh, Mark E. Law, Sushil Bharatan, Kevin S. Jones, Viswanath Krishnamoorthy, and Temel Buyuklimanli

Appl. Phys. Lett. 77, 112 (2000); http://dx.doi.org/10.1063/1.126894 (3 pages) | Cited 9 times

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Boron, a p-type dopant, experiences transient enhanced diffusion (TED) via interstitials. The boron TED and {311} dissolution rates are explored as a function of implant energy dependence. Silicon implants of 1014/cm2 at various energies were used to damage the surface of a wafer with an epitaxially grown boron marker layer. Samples were annealed at 750 °C for 15–135 min to observe the diffusion exhibited by the marker layer and to correlate this with the dissolution of {311} type defects. The diffusion enhancement depends strongly on implant energy but the {311} dissolution rate is weakly dependent. © 2000 American Institute of Physics.
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66.30.J- Diffusion of impurities
61.72.J- Point defects and defect clusters
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors

Electronic structure of the Fe–Cu–Nb–Si–B alloys by x-ray absorption spectroscopy

Y. H. Cheng, J. C. Jan, J. W. Chiou, W. F. Pong, M.-H. Tsai, H. H. Hseih, Y. K. Chang, T. E. Dann, F. Z. Chien, P. K. Tseng, M. S. Leu, and T. S. Chin

Appl. Phys. Lett. 77, 115 (2000); http://dx.doi.org/10.1063/1.126895 (3 pages) | Cited 1 time

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We measured x-ray absorption near-edge-structure (XANES) spectra of nanocrystalline- (nc-) and amorphous- (a-) Fe73.5Cu1Nb3Si13.5B9 (nc-FCNSB and a-FCNSB) and Fe78Si13B9 (a-FeSiB) alloys at the Fe L3,2 edge using the sample drain current mode and at the Cu L3,2, and Nb L3 edge and Si K edge using the fluorescence mode. The features in the Fe L3-edge XANES spectrum of nc-FCNSB changed shape significantly with the addition of Cu and Nb to the Fe–Si–B alloy under the optimum annealing conditions, indicating that Cu and Nb strongly influence the Fe 3d local electronic structure. Closely examining the Cu L3,2-edge XANES spectrum of nc-FCNSB reveals that the Cu clusters essentially have a body-centered-cubic structure. The white-line features at the Nb L3 edge suggest a slight increase in delocalization of Nb 4d orbits when a-FCNSB is crystallized into nc-FCNSB. The Si K-edge XANES spectrum demonstrates the dominance of Fe–Si bonds around the Si atom in nc-FCNSB. © 2000 American Institute of Physics.
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71.23.Cq Amorphous semiconductors, metallic glasses, glasses
73.22.-f Electronic structure of nanoscale materials and related systems
78.70.Dm X-ray absorption spectra
71.20.Gj Other metals and alloys
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