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3 Jul 2000

Volume 77, Issue 1, pp. 1-153

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Electro-optic polymer modulators with 0.8 V half-wave voltage

Yongqiang Shi, Weiping Lin, David J. Olson, James H. Bechtel, Hua Zhang, William H. Steier, Cheng Zhang, and Larry R. Dalton

Appl. Phys. Lett. 77, 1 (2000); http://dx.doi.org/10.1063/1.126857 (3 pages) | Cited 47 times

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We report the fabrication and test results for polymeric electro-optic modulators with a half-wave voltage of 0.8 V and a half-wave voltage-interaction length product of 2.2 V cm. These modulators employ an optical push–pull architecture and are made from poly(methylmethacrylate) with a high molecular hyperpolarizability polyene bridge-type chromophore. An electro-optic coefficient of 58 pm/V was obtained at a 1318 nm wavelength. The guest–host polymer system exhibited a thermal stability to 75 °C and a relatively stable nonlinearity at ambient conditions. The experimental results have demonstrated not only the sub-1 V half-wave voltage electro-optic polymer modulator but also the potential of polymeric electro-optic materials for photonic applications. © 2000 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
42.70.Jk Polymers and organics

Midinfrared emission from near-infrared quantum-dot lasers

M. Grundmann, A. Weber, K. Goede, V. M. Ustinov, A. E. Zhukov, N. N. Ledentsov, P. S. Kop’ev, and Zh. I. Alferov

Appl. Phys. Lett. 77, 4 (2000); http://dx.doi.org/10.1063/1.126858 (3 pages) | Cited 30 times

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We report the electrically pumped emission of midinfrared (MIR) radiation from bipolar quantum-dot lasers during near-infrared lasing. The MIR spectrum exhibits a peak at 16 μm and is dominantly TM polarized. The MIR intensity exhibits a superlinear dependence on the injection; a maximum MIR power of 0.1 μW per facet was realized. Such a device is also modeled theoretically, and conditions for MIR lasing are predicted. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes

Electrically assisted self-confinement and waveguiding in planar nematic liquid crystal cells

M. Peccianti, A. De Rossi, G. Assanto, A. De Luca, C. Umeton, and I. C. Khoo

Appl. Phys. Lett. 77, 7 (2000); http://dx.doi.org/10.1063/1.126859 (3 pages) | Cited 98 times

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We report on spatial soliton formation and self/cross waveguiding in planar cells containing a nematic liquid crystal in the presence of an externally applied voltage. Self-confinement and cross-induced guidance are demonstrated with an Argon ion laser (514 nm) and a helium–neon probe (633 nm), respectively, over millimeter lengths and with milliwatt pump powers. © 2000 American Institute of Physics.
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42.65.Tg Optical solitons; nonlinear guided waves
42.79.Kr Display devices, liquid-crystal devices
42.70.Df Liquid crystals
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
42.65.Wi Nonlinear waveguides
78.20.Jq Electro-optical effects

Silicon monolithic microchannel-cooled laser diode array

J. A. Skidmore, B. L. Freitas, J. Crawford, J. Satariano, E. Utterback, L. DiMercurio, K. Cutter, and S. Sutton

Appl. Phys. Lett. 77, 10 (2000); http://dx.doi.org/10.1063/1.126860 (3 pages) | Cited 9 times

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A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 °C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm2 is achieved cw at an emission wavelength of ∼ 808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Two-photon readout of three-dimensional memory in silica

M. Watanabe, S. Juodkazis, H.-B. Sun, S. Matsuo, and H. Misawa

Appl. Phys. Lett. 77, 13 (2000); http://dx.doi.org/10.1063/1.126861 (3 pages) | Cited 35 times

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We report the readout of three-dimensional (3D) optical memory in silica by detecting the photoluminescence (PL) of the bits (voxels). A broad defect-related PL band at 400–700 nm was excited by two-photon absorption of femtosecond (pulse duration of 120 fs) illumination at 795 nm. We employed a simple reflection-type scanning readout without the use of a confocal detection scheme to read 3D memory by recording the PL of the bits (the same objective lens was used for the excitation and the collection of the PL). Bit plane separation as small as 3 μm was resolved without cross talk, when the theoretical limit of the axial resolution evaluated as a full-width at half maximum measure of a bit size was 1.4 μm at the fabrication conditions employed. © 2000 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks
78.55.Hx Other solid inorganic materials
71.55.Ht Other nonmetals
78.47.-p Spectroscopy of solid state dynamics

Spectral responsivity of single-quantum-well photodetectors

S. A. Vitusevich, A. Förster, W. Reetz, H. Lüth, A. E. Belyaev, and S. V. Danylyuk

Appl. Phys. Lett. 77, 16 (2000); http://dx.doi.org/10.1063/1.126862 (3 pages) | Cited 4 times

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The photoresponsivity spectra of double-barrier resonant tunneling diodes have been measured in a wide range of light wavelength as well as applied voltage. The complex behavior of measured spectra is analyzed taking into account different channels for electron injection into the quantum well (QW). It has been shown that the photoresponse in the infrared wavelength range could arise not only from the electrons excited inside the QW, but also from the two-dimensional electrons confined on the quantum level in the spacer accumulation layer. © 2000 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.30.Kk Junction diodes
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
85.60.Dw Photodiodes; phototransistors; photoresistors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Pump-probe measurement of ultrafast all-optical modulation based on intersubband transition in n-doped quantum wells

T. Asano, M. Tamura, S. Yoshizawa, and S. Noda

Appl. Phys. Lett. 77, 19 (2000); http://dx.doi.org/10.1063/1.126863 (3 pages) | Cited 16 times

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Modulation of interband-resonant light (∼800 nm) by intersubband-resonant light (5–7 μm) was investigated in n-doped AlGaAs/GaAs multiple quantum wells by a two-color femtosecond pump-probe technique. Modulation with a recovery time of ∼1 ps is observed in a plainer-type modulation device at room temperature. The modulation of interband absorption coefficient is ∼1000 cm−1 when the energy density of the intersubband light pulse is ∼4 fJ/μm2. The modulation efficiency indicates that 99% modulation can be achieved with a control pulse energy of ∼1 pJ when a conventional waveguide-type device structure is utilized. The mechanism which determines the modulation speed is discussed in terms of carrier relaxation process. It is shown that the modulation speed is mainly determined by the inter- and intrasubband relaxation times, where the latter is influenced by hot phonon effects. © 2000 American Institute of Physics.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.79.Gn Optical waveguides and couplers
78.47.-p Spectroscopy of solid state dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
71.38.-k Polarons and electron-phonon interactions

Modal frequencies of vertical-cavity lasers determined by an effective-index model

Darwin K. Serkland, G. R. Hadley, K. D. Choquette, K. M. Geib, and A. A. Allerman

Appl. Phys. Lett. 77, 22 (2000); http://dx.doi.org/10.1063/1.126864 (3 pages) | Cited 6 times

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Previously, an effective-index optical model was introduced for the analysis of lateral waveguiding effects in vertical-cavity surface-emitting lasers. We show that the resultant transverse equation obtained in that model is almost identical to the one typically obtained in the analysis of dielectric waveguide problems, such as a step-index optical fiber. In this letter, we extend the effective-index model to obtain predictions of the discrete frequencies of the microcavity modes. As an example, we apply the analysis to vertical-cavity lasers that contain thin-oxide apertures. The model intuitively explains our experimental data and makes quantitative predictions in good agreement with a highly accurate numerical model. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Sa Microcavity and microdisk lasers

A quantum cascade laser fabricated using planar native-oxide layers

C. D. Farmer, P. T. Keightley, C. N. Ironside, C. R. Stanley, L. R. Wilson, and J. W. Cockburn

Appl. Phys. Lett. 77, 25 (2000); http://dx.doi.org/10.1063/1.126865 (3 pages) | Cited 9 times

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We present work on the application of a thermal wet oxidation process to the fabrication of quantum cascade lasers. The native oxide of the Al0.48In0.52As upper cladding layer was formed and used to provide electrical and optical confinement for lasers operating at λ≈5 μm. Initial results include 1.4 W peak output power and 0.69 W/A slope efficiency at 10 K, and a reduced temperature dependence of the threshold current density (T0 = 142) K. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.65.Mq Oxidation
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors

Alignment control method for liquid crystalline molecules and its application for an all-optical device

San-Seong Seomun, Takashi Fukuda, Hiro Matsuda, Hiroshi Miyachi, and Masao Kato

Appl. Phys. Lett. 77, 28 (2000); http://dx.doi.org/10.1063/1.126866 (3 pages) | Cited 4 times

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A nematic liquid crystalline monomer, containing photocrosslinkable divinyl and azobenzene moieties as functional groups was synthesized. Laser beam irradiation on a liquid crystalline cell of this material is capable of fabricating a very thin cross linked polymer layer on the alignment surface. The crosslinked polymer layer modifies the anchoring force between the alignment surface and liquid crystalline molecules. Meanwhile, the monomeric azobenzene moiety in the bulk interacts with incident light resulting in molecular reorientation through the trans-cis-trans-photoisomerization cycles. Combining the two characteristics mentioned above, a kind of optical device has been proposed. The driving mechanism of this device is the reversible phototriggered switching of the molecular orientation between the homogeneous and the homeotropic state. © 2000 American Institute of Physics.
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42.70.Df Liquid crystals
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
82.30.Qt Isomerization and rearrangement
82.50.-m Photochemistry
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
82.35.-x Polymers: properties; reactions; polymerization
42.70.Jk Polymers and organics
61.25.H- Macromolecular and polymers solutions; polymer melts

High-energy-resolution x-ray optics with refractive collimators

A. I. Chumakov, R. Rüffer, O. Leupold, A. Barla, H. Thiess, T. Asthalter, B. P. Doyle, A. Snigirev, and A. Q. R. Baron

Appl. Phys. Lett. 77, 31 (2000); http://dx.doi.org/10.1063/1.126867 (3 pages) | Cited 23 times

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We have tested the concept of a high-resolution x-ray monochromator with a refractive collimator as an optical element. Two options were examined, where the refractive collimator was included either instead of, or in addition to the first crystal of the high-resolution monochromator. The first approach offers an easy means of improving the energy resolution of conventional optical schemes by few orders of magnitude while still accepting the entire angular divergence of the primary beam. The second approach improves the performance of existing devices with very high-energy resolution and simplifies the design of future optical schemes. © 2000 American Institute of Physics.
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07.85.-m X- and γ-ray instruments
42.79.Ag Apertures, collimators

Enhancement of transverse trapping efficiency for a metallic particle using an obstructed laser beam

Min Gu, Dru Morrish, and Pu Chun Ke

Appl. Phys. Lett. 77, 34 (2000); http://dx.doi.org/10.1063/1.126868 (3 pages) | Cited 8 times

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We report that the transverse trapping efficiency for a metallic particle can be enhanced by use of a laser beam obstructed by a circular opaque disk. In the case of gold particles, the enhancement factor for a p- or s-polarized trapping beam is at least 1.7 or 2.5, respectively. The dependence of the transverse trapping efficiency for gold particles (diameter = 2 μm) on the size of the obstruction is measured and agrees with the theoretical prediction based on the ray-optics model. © 2000 American Institute of Physics.
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37.10.Vz Mechanical effects of light on atoms, molecules, and ions
37.10.Mn Slowing and cooling of molecules
37.10.Pq Trapping of molecules
42.25.Ja Polarization

Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence

Y. S. Huang, L. Malikova, Fred H. Pollak, H. Shen, J. Pamulapati, and P. Newman

Appl. Phys. Lett. 77, 37 (2000); http://dx.doi.org/10.1063/1.126869 (3 pages) | Cited 26 times

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We have investigated an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser using surface photovoltage spectroscopy (SPS) in the temperature range of 15 K<T<400 K. For comparison purposes, we have also (a) measured temperature-dependent photoreflectance (PR) and normal-incidence reflectivity (NIR); and (b) calculated the number of photoexcited carriers (PEC), which is related to the SPS signal. The SPS spectra exhibit both the fundamental conduction to heavy-hole (1C–1H) excitonic transition and cavity mode plus a rich interference pattern related to the properties of the mirror stack. The PR data show only the 1C–1H excitonic transition (plus Franz–Keldysh oscillations) while the cavity mode is detected by NIR. The temperature variation of 1C–1H/cavity mode is the same for SPS and PR/SPS and NIR. The SPS interference pattern from the DBRs is in good agreement with the PEC calculation. This experiment demonstrates the considerable potential of SPS for the characterization of these devices. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.66.Fd III-V semiconductors
72.40.+w Photoconduction and photovoltaic effects
73.25.+i Surface conductivity and carrier phenomena
73.50.Pz Photoconduction and photovoltaic effects
78.20.-e Optical properties of bulk materials and thin films
71.35.-y Excitons and related phenomena
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