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11 Dec 2000

Volume 77, Issue 24, pp. 3881-4064

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Supernarrowing mirrorless laser emission in dendrimer-doped polymer waveguides

Akira Otomo, Shiyoshi Yokoyama, Tatsuo Nakahama, and Shinro Mashiko

Appl. Phys. Lett. 77, 3881 (2000); http://dx.doi.org/10.1063/1.1331092 (3 pages) | Cited 21 times

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A supernarrowing laser spectrum is observed for mirrorless polymer waveguide lasers containing rhodamine B cored dendrimers. The moderate scattering from the aggregated dendrimers in the host polymer matrix is responsible for the mirrorless lasing. However, the long amplification path through the waveguide produces a directional beam and supernarrowing a spectrum in scattering lasers. © 2000 American Institute of Physics.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.70.Hj Laser materials
42.70.Jk Polymers and organics
42.79.Gn Optical waveguides and couplers

X-ray and optical characterization of multilayer AlGaAs waveguides

G. Leo, C. Caldarella, G. Masini, A. De Rossi, G. Assanto, O. Durand, M. Calligaro, X. Marcadet, and V. Berger

Appl. Phys. Lett. 77, 3884 (2000); http://dx.doi.org/10.1063/1.1331354 (3 pages) | Cited 4 times

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Effective-index measurements in multilayer AlGaAs waveguides are used in conjunction with x-ray reflectometry to yield refractive indices and thicknesses of the constituent layers, with the accuracy required by parametric interactions in guided-wave and photonic-band-gap structures. © 2000 American Institute of Physics.
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42.82.Et Waveguides, couplers, and arrays
42.65.Wi Nonlinear waveguides
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
42.65.Yj Optical parametric oscillators and amplifiers
42.70.Qs Photonic bandgap materials
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Controlling the noncentrosymmetry of azodye-doped polymers by nonresonant dual-frequency coherent excitation

Jinhai Si, Jianrong Qiu, and Kazuyuki Hirao

Appl. Phys. Lett. 77, 3887 (2000); http://dx.doi.org/10.1063/1.1332816 (3 pages) | Cited 8 times

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All-optical control of the noncentrosymmetry of azodye-doped polymer films was demonstrated by nonresonant dual-frequency coherent excitation. The tensor analysis of the photoinduced noncentrosymmetry was performed by monitoring second harmonic generation (SHG) of the samples. The quadratic dependence of SHG on the film thickness showed that a χ(2) grating satisfying the phase-matching condition for SHG was optically induced in the polymer films, indicating this nonresonant all-optical poling can be used to tailor the symmetry of bulk samples. © 2000 American Institute of Physics.
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42.70.Jk Polymers and organics
61.41.+e Polymers, elastomers, and plastics
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Qn Polymers; organic compounds

High-speed GaAs-based resonant-cavity-enhanced 1.3 μm photodetector

Ibrahim Kimukin, Ekmel Ozbay, Necmi Biyikli, Tolga Kartaloglu, Orhan Aytür, Selim Unlu, and Gary Tuttle

Appl. Phys. Lett. 77, 3890 (2000); http://dx.doi.org/10.1063/1.1329628 (3 pages) | Cited 9 times

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We report GaAs-based high-speed, resonant-cavity-enhanced, Schottky barrier internal photoemission photodiodes operating at 1.3 μm. The devices were fabricated by using a microwave-compatible fabrication process. Resonance of the cavity was tuned to 1.3 μm and a nine-fold enhancement was achieved in quantum efficiency. The photodiode had an experimental setup limited temporal response of 16 ps, corresponding to a 3 dB bandwidth of 20 GHz. © 2000 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.Hi Surface barrier, boundary, and point contact devices
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Intersubband electroluminescence from long-side-cleaved quantum-cascade lasers above threshold: Investigation of phonon bottleneck effects

Raffaele Colombelli, Federico Capasso, Claire Gmachl, Alessandro Tredicucci, A. Michael Sergent, Albert L. Hutchinson, Deborah L. Sivco, and Alfred Y. Cho

Appl. Phys. Lett. 77, 3893 (2000); http://dx.doi.org/10.1063/1.1330566 (3 pages) | Cited 6 times

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A technique is reported which allows the observation of intersubband spontaneous emission in unipolar quantum-cascade lasers above threshold. The technique consists of cleaving the laser stripe in the direction perpendicular to its facets. This does not negatively affect the operation of the lasers thanks to their unipolar nature. To show the potential of the method, we apply it to superlattice quantum-cascade (QC) lasers with various active region designs. We directly observe the saturation of the luminescence intensity at the laser transition, and a bottleneck effect for transitions separated from the lasing one by less than one optical phonon. This technique should help in the optimization of QC lasers. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.60.Fi Electroluminescence
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Observation of terahertz electric pulses generated by nearly filled-gap nonuniform illumination excitation

Shi-Hsiang Lu, Jun-Liang Li, Jian-Shen Yu, Sheng-Fu Horng, and C. C. Chi

Appl. Phys. Lett. 77, 3896 (2000); http://dx.doi.org/10.1063/1.1332830 (3 pages) | Cited 1 time

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Terahertz (THz) electric pulses generated by nonuniform illumination excitation in a nearly filled-gap configuration were observed. In this scheme, the excitation beam is focused to a spotsize only slightly smaller than the spacing between the transmission lines and is located symmetrically within the gap. With 100 fs laser pulses excitation on sliding-contact photoconductive switches fabricated on low-temperature-grown GaAs, electric pulse correlation with 190±20 fs full width at half maximum, which corresponds to a 3 dB bandwidth of 1.1 THz, was observed. Moreover, electric pulses with three times larger peak amplitude than those generated with filled-gap illumination from In coplanar striplines were observed. Bias, wavelength, and pump power dependencies were investigated. © 2000 American Institute of Physics.
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07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources
85.60.-q Optoelectronic devices
84.40.Az Waveguides, transmission lines, striplines
84.30.Ng Oscillators, pulse generators, and function generators

Deconvolution of the intrinsic spontaneous spectrum of vertical-cavity surface-emitting devices

P. Royo, R. P. Stanley, M. Ilegems, K. Streubel, and K. H. Gulden

Appl. Phys. Lett. 77, 3899 (2000); http://dx.doi.org/10.1063/1.1332819 (3 pages) | Cited 4 times

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A simple method for determining the intrinsic spontaneous spectrum of vertical-cavity surface-emitting devices is presented. The procedure is based on angle-resolved measurements of the top-emission spectra and comparison with numerical simulations, which corresponds to a deconvolution. The use of this technique is demonstrated on AlGaInP-based microcavity light-emitting diodes designed for top emission at 650 nm. Measurement on reference light-emitting diodes having the same active region confirmed the accuracy of this method which is nondestructive, easy to implement, and can be applied to vertical-cavity surface-emitting lasers operating below threshold. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.Jb Light-emitting devices

Photonic-crystal-based beam splitters

Mehmet Bayindir, B. Temelkuran, and E. Ozbay

Appl. Phys. Lett. 77, 3902 (2000); http://dx.doi.org/10.1063/1.1332821 (3 pages) | Cited 79 times

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We proposed and demonstrated two different methods to split electromagnetic waves in three-dimensional photonic crystals. By measuring transmission spectra, it was shown that the guided mode in a coupled-cavity waveguide can be splitted into the coupled-cavity or planar waveguide channels without radiation losses. The flow of electromagnetic waves through output waveguide ports can also be controlled by introducing extra defects into the crystals. Our results may have an important role in the design of efficient power splitters in a photonic circuit. © 2000 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.79.Fm Reflectors, beam splitters, and deflectors
84.40.Az Waveguides, transmission lines, striplines
42.82.Fv Hybrid systems
78.70.Gq Microwave and radio-frequency interactions

Local degradation of selectively oxidized AlGaAs/AlAs distributed Bragg reflectors in lateral-injection vertical-cavity surface-emitting lasers

Massimo De Vittorio, Pablo O. Vaccaro, Milena De Giorgi, Sergio De Rinaldis, and Roberto Cingolani

Appl. Phys. Lett. 77, 3905 (2000); http://dx.doi.org/10.1063/1.1332405 (3 pages) | Cited 1 time

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We show the local degradation of a selectively oxidized top distributed Bragg reflector (DBR) in a lateral-junction vertical-cavity surface-emitting laser (LJ-VCSEL) working at room temperature in continuous-wave operation. The measurements were carried out by a scanning microluminescence system used in reflection mode. The injection of a few milliamps in continuous-wave operation at room temperature in the LJ-VCSEL induces damage both in the DBRs and in the active area. The submicron resolution maps of the reflected laser intensity, recorded from the top surface of the LJ-VCSEL, show a strong local change in the top DBR reflectivity before and after current injection. The μ-photoluminescence map, recorded after the device failure, shows that the radiative recombination is strongly decreased in the damaged area of the device. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.55.Cr III-V semiconductors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection

V. V. Sherstnev, A. M. Monahov, A. Krier, and G. Hill

Appl. Phys. Lett. 77, 3908 (2000); http://dx.doi.org/10.1063/1.1332980 (3 pages) | Cited 16 times

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We report on the superluminescence of an InAsSb light-emitting diode, operating at 4.6 μm, suitable for carbon monoxide gas detection. The source is based on an optical whispering (or circulating) mode which is generated near the edges of the mesa and which is responsible for the superluminescence. A pulsed optical output power in excess of 2.2 mW at room temperature has been measured, making these emitters suitable for use in cost-effective instruments for the environmental monitoring of carbon monoxide at 4.6 μm. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices
07.88.+y Instruments for environmental pollution measurements
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Low-loss transmission through tightly bent standard telecommunication fibers

Denis Donlagić and Brian Culshaw

Appl. Phys. Lett. 77, 3911 (2000); http://dx.doi.org/10.1063/1.1333405 (3 pages) | Cited 4 times

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This letter presents a principle of low-loss light transmission through tightly bent standard telecommunication optical fibers. The design is based on selective launching and filtering of the fundamental mode in standard graded index multimode fiber. The proposed system has demonstrated significantly better macrobend tolerance than commercially available bend resistant fibers. © 2000 American Institute of Physics.
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42.81.Dp Propagation, scattering, and losses; solitons
42.81.Ht Gradient-index (GRIN) fiber devices
42.81.Cn Fiber testing and measurement of fiber parameters
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Depletion of charge produced during plasma exposure in aluminum oxide by vacuum ultraviolet radiation

C. Cismaru, J. L. Shohet, J. L. Lauer, R. W. Hansen, and S. Ostapenko

Appl. Phys. Lett. 77, 3914 (2000); http://dx.doi.org/10.1063/1.1331081 (3 pages) | Cited 10 times

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A temporary increase in the conductivity of aluminum oxide sputter deposited on the surface of aluminum wafers was made by exposure to vacuum ultraviolet (VUV) radiation produced by a synchrotron light source. The oxide was charged, either positively or negatively, by exposure to a nonreactive inductively coupled plasma, under typical plasma processing conditions. We show the dependence of the conductivity on the energy of the incoming radiation, and conclude that only those photons whose energy is above the band gap of the oxide are capable of producing a temporary increase in the conductivity. By exposing localized regions of precharged oxide samples to the vacuum ultraviolet radiation, we produce regions of charge depletion in and around the exposed areas. We conclude that VUV radiation may be used to significantly decrease plasma-induced surface charging of dielectrics. © 2000 American Institute of Physics.
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73.25.+i Surface conductivity and carrier phenomena
73.50.Pz Photoconduction and photovoltaic effects
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
73.61.Ng Insulators
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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Nanoscale selective-area epitaxial growth of Si using an ultrathin SiO2/Si3Ni4 mask patterned by an atomic force microscope

T. Yasuda, S. Yamasaki, and S. Gwo

Appl. Phys. Lett. 77, 3917 (2000); http://dx.doi.org/10.1063/1.1331078 (3 pages) | Cited 13 times

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We report selective epitaxial growth of Si using an ultrathin bilayer mask. The key feature of this process is direct writing of nanoscale patterns by means of local anodic oxidation of a Si3N4 layer using an atomic force microscope operated in air. Windows for selective growth are defined by wet etching of the locally oxidized regions. High growth selectivity upon chemical vapor deposition of Si is accomplished by employing the bilayer mask structure which is formed by oxidizing the Si3N4 surface and then selectively desorbing SiO2 in the windows. High-quality homoepitaxial growth is verified by transmission electron microscopy. We also report a simple plasma-treatment technique which solves the problem of retarded SiO2 desorption in the nanoscale windows. © 2000 American Institute of Physics.
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81.05.Cy Elemental semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.07.-b Nanoscale materials and structures: fabrication and characterization
81.16.-c Methods of micro- and nanofabrication and processing
85.35.-p Nanoelectronic devices
07.79.Lh Atomic force microscopes
81.65.Cf Surface cleaning, etching, patterning
81.65.Mq Oxidation
85.40.Sz Deposition technology
85.40.Hp Lithography, masks and pattern transfer
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition

Proposed interpretation for possible solid-state amorphization in some Cu-based binary metal systems

Z. F. Li, W. S. Lai, and B. X. Liu

Appl. Phys. Lett. 77, 3920 (2000); http://dx.doi.org/10.1063/1.1330755 (3 pages) | Cited 11 times

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According to a recently proposed criterion for solid-state amorphization to take place in a binary metal system, it is necessary to have a negative thermodynamic factor ΔF defined as a Gibbs free energy difference between an amorphous phase and the initial energetic state of the multilayers/or bilayer together with a relevantly large kinetic factor κ correlated to a diffusivity difference between the constituent metals of the system. The criterion is employed to discuss the possibility of solid-state amorphization in five representative Cu-based binary metal systems featuring either positive or negative heat of mixing. It turns out that the prediction based on the above argument for these Cu-based systems is in good agreement with the experimental results observed so far. © 2000 American Institute of Physics.
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66.30.Ny Chemical interdiffusion; diffusion barriers
61.43.Dq Amorphous semiconductors, metals, and alloys
68.35.Fx Diffusion; interface formation
64.75.-g Phase equilibria
65.20.-w Thermal properties of liquids
65.40.gd Entropy
05.70.Ce Thermodynamic functions and equations of state

Carrier transport and luminescence in inverted-pyramid quantum structures

K. Leifer, A. Hartmann, Y. Ducommun, and E. Kapon

Appl. Phys. Lett. 77, 3923 (2000); http://dx.doi.org/10.1063/1.1332099 (3 pages) | Cited 13 times

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Cathodoluminescence spectroscopy and wavelength-dispersive imaging were employed for investigating the carrier transport and recombination in GaAs/AlGaAs inverted-pyramid quantum dot (QD) heterostructures grown on patterned (111)B GaAs substrates. The spectra and images clearly evidence carrier recombination in quantum wells and quantum wires (QWR) and show potential variations in these structures. Luminescence from the lens-shaped QDs was identified and characterized as a function of the GaAs layer thickness. Furthermore, we show a tapering of the GaAs QWR that self-forms at the corners of the pyramids. Application of such tapered QWRs as “exciton accelerators” is discussed. © 2000 American Institute of Physics.
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73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.60.Hk Cathodoluminescence, ionoluminescence
78.55.Cr III-V semiconductors
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.35.-y Excitons and related phenomena
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Dynamics of optical nonlinearity of Ge nanocrystals in a silica matrix

Y. X. Jie, Y. N. Xiong, A. T. S. Wee, C. H. A. Huan, and W. Ji

Appl. Phys. Lett. 77, 3926 (2000); http://dx.doi.org/10.1063/1.1330569 (3 pages) | Cited 14 times

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The optical nonlinearity and excited carrier lifetime in Ge nanocrystals (nc-Ge) embedded in a silica matrix have been investigated by means of single beam z scan and pump-probe techniques with laser pulse duration of 35 ps and 532 nm wavelength. The nc-Ge samples were prepared using magnetron cosputtering and postgrowth annealing at 800 °C. The nonlinear absorption coefficient α2 and refractive index n2 were found to range between 190 and 760 cm/GW, and 0.0026 and 0.0082 cm2/GW, respectively, and be proportional to the Ge concentration in the film. The confined excited carriers were found to depopulate with a lifetime of ∼70 ps. The nonlinearity in Ge nanocrystals is deduced to originate mainly from excited carrier absorption, with two-photon absorption providing a small contribution. © 2000 American Institute of Physics.
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42.65.-k Nonlinear optics
42.70.Mp Nonlinear optical crystals
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Cw Elemental semiconductors

Strain profiles in epitaxial films from x-ray Bragg diffraction phases

I. Vartanyants, C. Ern, W. Donner, H. Dosch, and W. Caliebe

Appl. Phys. Lett. 77, 3929 (2000); http://dx.doi.org/10.1063/1.1332100 (3 pages) | Cited 12 times

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We present a versatile and model-independent approach for the analysis of strain distributions in thin-film systems which is based on the x-ray phase retrieval by an iterative Gerchberg–Saxton algorithm. This scheme is used to determine the strain profile across a thin ordered Cu3Au(111) film grown epitaxially on Al2O3. © 2000 American Institute of Physics.
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68.60.Bs Mechanical and acoustical properties
61.05.cp X-ray diffraction

Impurity gettering by vacancy-type defects in high-energy ion-implanted silicon at Rp /2

R. Krause-Rehberg, F. Börner, and F. Redmann

Appl. Phys. Lett. 77, 3932 (2000); http://dx.doi.org/10.1063/1.1332814 (3 pages) | Cited 14 times

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Vacancy-type defects were studied after high-energy self-implantation of Si and subsequent rapid thermal annealing by means of a depth-resolution enhanced positron beam technique. Two different types of open-volume defects were found at a depth of Rp/2 and Rp, respectively. The defect type at Rp/2 is an agglomeration of point defects containing vacancies. This defect getters diffusing copper atoms. The vacancy-type defect observed in a depth of Rp could be connected to the interstitial loops formed there. The positron annihilation parameters suggest that this detected defect is not decorated by diffusing copper atoms. © 2000 American Institute of Physics.
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61.72.Yx Interaction between different crystal defects; gettering effect
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.72.J- Point defects and defect clusters
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.70.Bj Positron annihilation

Formation of quasicrystals in Zr46.8Ti8.2Cu7.5Ni10Be27.5 bulk glass

N. Wanderka, M.-P. Macht, M. Seidel, S. Mechler, K. Ståhl, and J. Z. Jiang

Appl. Phys. Lett. 77, 3935 (2000); http://dx.doi.org/10.1063/1.1329636 (3 pages) | Cited 40 times

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The formation of the quasicrystalline phase is observed as a first step of crystallization during isothermal annealing of the Zr46.7Ti8.3Cu7.5Ni10Be27.5 bulk glass. The structure of the quasicrystals and the sequence of phase formation have been investigated by x-ray powder diffraction and transmission electron microscopy. The structure of the quasicrystals is determined to be primitive icosahedral with a quasilattice constant of 4.779 Å. The quasicrystals decompose into several intermetallic compounds after prolonged annealing at lower temperatures or in a short time period (less than 5 min) at high temperatures above 683 K. © 2000 American Institute of Physics.
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61.44.Br Quasicrystals
61.43.Fs Glasses

Structural templating effects in molecular heterostructures grown by organic molecular-beam deposition

S. Heutz, R. Cloots, and T. S. Jones

Appl. Phys. Lett. 77, 3938 (2000); http://dx.doi.org/10.1063/1.1332820 (3 pages) | Cited 26 times

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Powder x-ray diffraction has been used to study the structural properties of multilayered heterostructures grown by organic molecular-beam deposition and based on the molecular materials H2Pc, perylene-3, 4, 9, 10-tetracarboxylic dianhydride (PTCDA) and Alq3. Structural templating has been observed for multilayers of PTCDA and H2Pc, with the first layer completely disrupting the structure of subsequent layers. H2Pc adopts a new structure when deposited on PTCDA, in which the molecular plane is oriented parallel to the substrate and this configuration is retained for film thicknesses >380 nm. The templating effect extends through molecular thin-film structures involving several different layers, but is attenuated by insertion of an amorphous layer such as Alq3. © 2000 American Institute of Physics.
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61.05.cp X-ray diffraction
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Reactivity of curved and planar carbon–nitride structures

Sven Stafström

Appl. Phys. Lett. 77, 3941 (2000); http://dx.doi.org/10.1063/1.1332976 (3 pages) | Cited 40 times

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The reactivity of different carbon–nitride structures has been studied using density functional theory calculations. The studies involve C59N and clusters of curved and planar CNx structures. Nitrogen is shown to lower the energy of pentagon defects in the graphite like structures, whereas heptagons are unlikely to be present. From this observation, it follows that nitrogen stimulates growth of fullerene like structures in CNx. The presence of nitrogen also increases the reactivity of the carbon atoms around the nitrogen. This leads to cross linking between basal planes which can explain the hardness and elasticity of CNx films. © 2000 American Institute of Physics.
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61.48.-c Structure of fullerenes and related hollow and planar molecular structures
71.20.Tx Fullerenes and related materials; intercalation compounds
81.05.ub Fullerenes and related materials
71.15.Mb Density functional theory, local density approximation, gradient and other corrections

Raman spectroscopy of In(Ga)As/GaAs quantum dots

L. Chu, A. Zrenner, M. Bichler, G. Böhm, and G. Abstreiter

Appl. Phys. Lett. 77, 3944 (2000); http://dx.doi.org/10.1063/1.1333398 (3 pages) | Cited 12 times

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We report on inelastic light scattering on self-assembled In(Ga)As/GaAs quantum dots. Phonon modes are investigated in backscattering from (001) surface and (110) cleaved edge both in polarized and depolarized geometry. One relatively broad phonon signal is observed which is attributed to optical phonon modes in and around the In(Ga)As quantum dots. The Raman selection rules are similar to the bulk material. Additionally, a broad peak is observed around 50 meV under resonance conditions which is attributed to electronic interlevel transitions in the n-doped In(Ga)As quantum dots. © 2000 American Institute of Physics.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.30.Fs III-V and II-VI semiconductors
63.20.K- Phonon interactions

Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition

T. Soga, T. Jimbo, J. Arokiaraj, and M. Umeno

Appl. Phys. Lett. 77, 3947 (2000); http://dx.doi.org/10.1063/1.1333691 (3 pages) | Cited 1 time

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A stress-released GaAs layer was grown on GaAs bonded to Si substrate with the combination of epitaxial lift-off technique and regrowth by metalorganic chemical vapor deposition. The GaAs thin film was bonded to Si substrate using SeS2 and another GaAs layer was regrown. The photoluminescence peak wavelength and the slope of the time resolved photoluminescence decay of GaAs/Si are almost the same as those of GaAs grown on GaAs substrate. © 2000 American Institute of Physics.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors

Features of nanometer scale islands on CdSe/ZnSe surfaces

B. P. Zhang, D. D. Manh, K. Wakatsuki, and Y. Segawa

Appl. Phys. Lett. 77, 3950 (2000); http://dx.doi.org/10.1063/1.1332983 (3 pages) | Cited 1 time

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We examined the early-stage (within a few hours) properties in air of nanometer scale islands formed on a CdSe/ZnSe surface. When a CdSe/ZnSe surface grown in vacuum was exposed to air, some islands were newly formed. The aspect ratio of the island was found to increase first and then decrease. A depletion zone was observed in the perimeter of the island which indicates the intermixing of ZnSe into the island. Surface analyses using Auger electron spectroscopy indicated that the island was composed mainly of oxides and the outer shell was Zn enriched and Cd depleted. This letter shows that surface oxidation plays a key role in the formation of islands on CdSe/ZnSe surfaces in atmosphere. © 2000 American Institute of Physics.
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68.35.Dv Composition, segregation; defects and impurities
81.65.Mq Oxidation
79.20.Fv Electron impact: Auger emission
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
81.05.Dz II-VI semiconductors
61.46.-w Structure of nanoscale materials

Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy

J. Stangl, T. Roch, G. Bauer, I. Kegel, T. H. Metzger, O. G. Schmidt, K. Eberl, O. Kienzle, and F. Ernst

Appl. Phys. Lett. 77, 3953 (2000); http://dx.doi.org/10.1063/1.1333683 (3 pages) | Cited 12 times

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We have investigated the vertical correlation properties of SiGe islands in a series of Si/SiGe multilayers using grazing incidence x-ray diffraction. The degree of island correlation is found to strongly depend on the thickness of the Si spacer layer separating subsequent SiGe layers. A comparison with results obtained from transmission electron microscopy demonstrates the feasibility of the x-ray diffraction method for the investigation of sample series, and an improved statistical accuracy of the obtained parameters: with x-ray diffraction, the statistical average of typically 106–107 island columns is obtained, compared to only few in the case of transmission electron microscopy. © 2000 American Institute of Physics.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
81.05.Hd Other semiconductors
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