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25 Dec 2000

Volume 77, Issue 26, pp. 4247-4436

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Preisach modeling of ferroelectric pinched loops

G. Robert, D. Damjanovic, and N. Setter

Appl. Phys. Lett. 77, 4413 (2000); http://dx.doi.org/10.1063/1.1332824 (3 pages) | Cited 14 times

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The Preisach approach is applied to model ferroelectric pinched (or constricted) loops. Starting from the existence of distributed switchable dipolar defects in the material and a corresponding distribution function, an analytical expression for the resulting ferroelectric loop is obtained. The corresponding hysteresis shape is indeed showing a clear pinching. Considerations about defect distribution expression and ways to characterize it from the loop are also made. It is finally suggested that such a description can be applied to any system exhibiting a pinched loop. © 2000 American Institute of Physics.
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77.80.Dj Domain structure; hysteresis
61.72.-y Defects and impurities in crystals; microstructure
77.80.Fm Switching phenomena

Ferroelectric silver niobate-tantalate thin films

Jung-Hyuk Koh, S. I. Khartsev, and Alex Grishin

Appl. Phys. Lett. 77, 4416 (2000); http://dx.doi.org/10.1063/1.1334655 (3 pages) | Cited 17 times

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Submicron thick ferroelectric AgTa0.38Nb0.62O3 (ATN) films have been prepared by pulsed laser deposition technique onto Pt80Ir20 polycrystalline and La0.7Sr0.3CoO3/LaAlO3 single crystal substrates. ATN/Pt80Ir20 films have been found to be (001) preferentially oriented, while the epitaxial quality of ATN/La0.7Sr0.3CoO3/LaAlO3 heterostructures has been ascertained. Comparative analysis of the temperature and frequency dependencies of the dielectric permittivity ε′ and loss tan δ in ATN films and bulk ceramics shows that in films: the coupled structural-ferroelectric monoclinic M1-to-monoclinic M2 phase transition occurs at the temperature 60° lower than in ceramics, thus the temperature stability of ε′ and tan δ in films is improved and occurs in extended temperature range. Reliable tracing of the ferroelectric hysteresis polarization versus electric loops indicates the ferroelectric state in ATN films at temperatures below 125 K and yields the remnant polarization of 0.4 μC/cm2 @77 K. Weak frequency dispersion, high temperature stability of the dielectric properties, as well as low processing temperature of 550 °C, are the most attractive features of ATN films. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
77.80.Dj Domain structure; hysteresis
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization
68.60.Dv Thermal stability; thermal effects
68.55.-a Thin film structure and morphology
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