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25 Dec 2000

Volume 77, Issue 26, pp. 4247-4436

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Quasi-phase matched second-harmonic generation in an AlxGa1−xAs asymmetric quantum-well waveguide using ion-implantation-enhanced intermixing

Jean-Pierre Bouchard, M. Têtu, S. Janz, D.-X. Xu, Z. R. Wasilewski, P. Piva, U. G. Akano, and I. V. Mitchell

Appl. Phys. Lett. 77, 4247 (2000); http://dx.doi.org/10.1063/1.1335545 (3 pages) | Cited 8 times

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Quasi-phase matched second-harmonic generation in the copropagating geometry is demonstrated in an asymmetric quantum-well waveguide. Modulation of the nonlinear susceptibility along the waveguide was achieved using a patterned quantum-well intermixing process. Photoluminescence measurements of the quantum-well bandedges indicate that a grating of alternating regions of intermixed and as-grown asymmetric quantum wells was produced for periods between 2 and 12 μm. The variation of the second-harmonic light intensity generated by guided incident light between λ = 1480 and 1600 nm was measured. The resulting second-harmonic spectra show sharp quasi-phase matching resonances for grating periods near 3 μm, demonstrating that a periodic modulation of the quantum-well nonlinear susceptibility was produced. © 2000 American Institute of Physics.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Wi Nonlinear waveguides
42.65.An Optical susceptibility, hyperpolarizability
78.55.Cr III-V semiconductors
68.35.Fx Diffusion; interface formation
42.79.Dj Gratings

Stimulated emission induced by exciton–exciton scattering in ZnO/ZnMgO multiquantum wells up to room temperature

H. D. Sun, T. Makino, N. T. Tuan, Y. Segawa, Z. K. Tang, G. K. L. Wong, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma

Appl. Phys. Lett. 77, 4250 (2000); http://dx.doi.org/10.1063/1.1333687 (3 pages) | Cited 70 times

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The mechanism of ultraviolet stimulated emission was investigated in ZnO/ZnMgO multiquantum wells. Stimulated emission induced by exciton–exciton scattering occurred throughout a range of temperatures from 5 K to room temperature. At temperatures higher than 160 K, stimulated emission due to electron-hole plasma recombination was also observed with a higher excitation threshold than that of exciton–exciton scattering. The exciton binding energies of multiquantum wells were larger than that of bulk ZnO and increased with a decrease in the well widths. This enhancement of exciton binding energy is due to the quantum-confinement effect and is favorable for the stability of exciton states. © 2000 American Institute of Physics.
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78.45.+h Stimulated emission
78.66.Hf II-VI semiconductors
71.35.Lk Collective effects (Bose effects, phase space filling, and excitonic phase transitions)
71.15.Nc Total energy and cohesive energy calculations

Optically pumped InGaN/GaN lasers with wet-etched facets

D. A. Stocker, E. F. Schubert, and J. M. Redwing

Appl. Phys. Lett. 77, 4253 (2000); http://dx.doi.org/10.1063/1.1333689 (3 pages) | Cited 4 times

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Optically pumped laser action is demonstrated in InGaN/GaN double heterostructure lasers with wet-etched facets. The facets are formed by a two-step etching process which creates vertical facets with less than 5 nm roughness. The first step, photoenhanced electrochemical wet etching, is used to define the laser cavities. The second step reduces the facet roughness by crystallographic wet chemical etching. Lasing is demonstrated by an increase in the differential quantum efficiency, linewidth narrowing, and strongly polarized output above threshold. The threshold varies with cavity length from 2.4 MW/cm2 for 500 μm cavities to 23 MW/cm2 for 50 μm cavities. A modal loss of 15 cm−1 is deduced from an analysis of the threshold pumping power as a function of cavity length. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.65.Cf Surface cleaning, etching, patterning
68.35.Ct Interface structure and roughness
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Drilled alternating-layer three-dimensional photonic crystals having a full photonic band gap

M. Notomi, T. Tamamura, T. Kawashima, and S. Kawakami

Appl. Phys. Lett. 77, 4256 (2000); http://dx.doi.org/10.1063/1.1332837 (3 pages) | Cited 17 times

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We propose a three-dimensional photonic crystal structure having a wide full photonic band gap in the optical regime, which can be fabricated by an alternating-layer deposition and etching (drilling) process. This fabrication process is much simpler than that previously reported. The combination of current lithographic technology and autocloning bias-sputtering deposition is a promising way of realizing these photonic crystals. © 2000 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
42.82.Cr Fabrication techniques; lithography, pattern transfer
81.65.Cf Surface cleaning, etching, patterning
81.15.Cd Deposition by sputtering

Patterned three-color ZnCdSe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters

Y. Luo, S. P. Guo, O. Maksimov, M. C. Tamargo, V. Asnin, F. H. Pollak, and Y. C. Chen

Appl. Phys. Lett. 77, 4259 (2000); http://dx.doi.org/10.1063/1.1330229 (3 pages) | Cited 13 times

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We report the growth and characterization of patterned ZnCdSe/ZnCdMgSe quantum-well (QW) structures grown adjacent to each other on a single InP substrate. Each structure emits at a different wavelength range spanning the visible range. Stripe and square-shaped QW structures of different emission wavelengths, with lateral dimensions between 15 and 60 μm, were deposited sequentially by shadow mask selective area epitaxy (SAE) steps. Conventional and microphotoluminescence measurements were used to characterize the patterned QWs. They exhibit well-defined excitonic emission in the red, yellow, and green regions of the visible spectrum. This result demonstrates the feasibility of fabricating integrated full-color light emitting diode and laser-based display elements and white light sources using the ZnCdMgSe material system and shadow mask SAE. © 2000 American Institute of Physics.
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78.66.Hf II-VI semiconductors
85.60.Pg Display systems
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.55.Et II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Expanded viewing-angle reflection from diffuse holographic-polymer dispersed liquid crystal films

M. J. Escuti, P. Kossyrev, G. P. Crawford, T. G. Fiske, J. Colegrove, and L. D. Silverstein

Appl. Phys. Lett. 77, 4262 (2000); http://dx.doi.org/10.1063/1.1335544 (3 pages) | Cited 34 times

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A switchable diffuse reflective film with high color purity is demonstrated using holographic-polymer dispersed liquid crystals (HPDLC). By recording a diffuse hologram directly into the LC/polymer film, the diffuse mode HPDLC exhibit viewing angles an order of magnitude larger than the conventional mode. A simple phenomenological model based on coupled-wave theory is developed to describe our observations. © 2000 American Institute of Physics.
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42.79.Kr Display devices, liquid-crystal devices
42.70.Ln Holographic recording materials; optical storage media
42.40.Ht Hologram recording and readout methods
42.70.Df Liquid crystals

Feasibility of 5 Gbit/s wavelength division multiplexing using quantum dot lasers

Marius Grundmann

Appl. Phys. Lett. 77, 4265 (2000); http://dx.doi.org/10.1063/1.1336559 (3 pages) | Cited 9 times

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The dynamics of single-mode quantum dot lasers is modeled theoretically. It is predicted that, assuming reasonable material properties, eye-patterns remain open for 5 Gbit/s large signal modulation within a finite spectral range (>50 nm), corresponding to 64 wavelength division multiplexing channels with 0.8 nm separation. © 2000 American Institute of Physics.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Rn Relaxation oscillations and long pulse operation

Fast accurate wavelength switching of an erbium-doped fiber laser with a Fabry–Perot semiconductor filter and fiber Bragg gratings

Shenping Li, K. S. Chiang, and W. A. Gambling

Appl. Phys. Lett. 77, 4268 (2000); http://dx.doi.org/10.1063/1.1336549 (3 pages) | Cited 1 time

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We propose a simple passive method for achieving fast accurate wavelength switching in an erbium-doped fiber laser. The method relies on a laser cavity formed with a Fabry–Perot semiconductor filter (FPSF) and narrow-band fiber Bragg gratings (FBGs), where the FBGs set the wavelength references and the FPSF can be tuned by changing its injection current to select a particular wavelength from those set by the FBGs. Because of the nonlinearity in the FPSF, optical negative feedback can be built up in the laser to suppress relaxation oscillations caused by wavelength switching. With this method, a wavelength switching time of less than 25 μs has been achieved experimentally. © 2000 American Institute of Physics.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Wd Fiber lasers
42.79.Dj Gratings
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Ci Filters, zone plates, and polarizers

Efficient red electroluminescence from devices having multilayers of a europium complex

Wenping Hu, Michio Matsumura, Mingzhao Wang, and Linpei Jin

Appl. Phys. Lett. 77, 4271 (2000); http://dx.doi.org/10.1063/1.1336161 (3 pages) | Cited 27 times

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In order to get red electroluminescence from a europium (Eu) complex with high efficiency, a hole-injection layer was inserted between the Eu-complex layer and an indium–tin–oxide electrode, and a hole-blocking layer was inserted between the Eu-complex and electron-transporting layers. To further improve the efficiency, devices having multiple-stacked Eu-complex (2.5 nm)/hole blocking (2.5 nm) units were fabricated. By stacking six units, the maximal luminance and emission efficiency of the red emission were increased to more than twice that from a device with a single Eu-complex layer. © 2000 American Institute of Physics.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds

Fast-scanning shear-force microscopy using a high-frequency dithering probe

Yongho Seo, June H. Park, Jin B. Moon, and Wonho Jhe

Appl. Phys. Lett. 77, 4274 (2000); http://dx.doi.org/10.1063/1.1334646 (3 pages) | Cited 11 times

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We have demonstrated high-speed scanning shear-force microscopy using a fiber tip attached to quartz crystal vibrating at 2.0 MHz resonance frequency. With a high-frequency dithering probe, we have obtained clear images at the scanning speed of 1.2 mm/s and it takes only 0.5 s to image the surface area of 55 μm2 for 64×64 pixels without any compromise of spatial lateral resolution. This speed is more than five times faster than that obtained by other topographic imaging methods and can be further improved to realize real-time shear-force probe microscopy. © 2000 American Institute of Physics.
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07.79.Lh Atomic force microscopes
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