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17 Jul 2000

Volume 77, Issue 3, pp. 313-459

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Random telegraph signals of tetrahedral-shaped recess field-effect transistor memory cell with a hole-trapping floating quantum dot gate

Masashi Shima, Yoshiki Sakuma, Yuji Awano, and Naoki Yokoyama

Appl. Phys. Lett. 77, 441 (2000); http://dx.doi.org/10.1063/1.127003 (3 pages) | Cited 2 times

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An AlGaAs/InGaAs heterojunction field-effect transistor (FET) memory cell in a tetrahedral-shaped recess (TSR) on the (111)B GaAs substrate was fabricated and investigated. The TSR–FET memory cell has a channel on the (111)A facet surfaces of the recess and a hole-trapping quantum dot (QD) as a floating gate at the bottom. Memory operations were achieved at temperatures up to 130 K, and random telegraph signals (RTSs) with a temperature dependence were observed in the retention characteristics. After our analysis of RTSs, the activation energy of hole capture and emission processes in the TSR QD were estimated to be 260 and 190 meV, respectively. © 2000 American Institute of Physics.
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85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.50.Td Noise processes and phenomena
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111)

Z. M. Zhao, R. L. Jiang, P. Chen, D. J. Xi, Z. Y. Luo, R. Zhang, B. Shen, Z. Z. Chen, and Y. D. Zheng

Appl. Phys. Lett. 77, 444 (2000); http://dx.doi.org/10.1063/1.127004 (3 pages) | Cited 19 times

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GaN metal–semiconductor–metal photoconductive detectors have been fabricated on Si(111) substrates. The GaN epitaxial layers were grown on Si substrates by means of metalorganic chemical-vapor deposition. These detectors exhibited a sharp cutoff at the wavelength of 363 nm and a high responsivity at a wavelength from 360 to 250 nm. A maximum responsivity of 6.9 A/W was achieved at 357 nm with a 5 V bias. The relationship between the responsivity and the bias voltage was measured. The responsivity saturated when the bias voltage reached 5 V. The response time of 4.8 ms was determined by the measurements of photocurrent versus modulation frequency. © 2000 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.61.Ey III-V semiconductors

Superconducting device with transistor-like properties including large current amplification

G. P. Pepe, G. Ammendola, G. Peluso, A. Barone, L. Parlato, E. Esposito, R. Monaco, and N. E. Booth

Appl. Phys. Lett. 77, 447 (2000); http://dx.doi.org/10.1063/1.127005 (3 pages) | Cited 10 times

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We have fabricated and studied a stacked superconducting double tunnel junction device with transistor-like properties. The intermediate electrode is a bilayer consisting of a Nb film together with an Al film that acts as a quasiparticle trap. Large current gains of more than 50 are observed at 4.2 K when the Al layer is normal. The operation is highly directional. Results are explained on the basis of trapping of quasiparticles from a superconductor into a normal metal, together with a conversion of relaxation energy into electronic excitations. Similar devices should have wide applications in low-temperature measurement and detection systems. © 2000 American Institute of Physics.
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85.25.Cp Josephson devices
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