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17 Jul 2000

Volume 77, Issue 3, pp. 313-459

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Generation of terahertz pulses by photoionization of electrically biased air

T. Löffler, F. Jacob, and H. G. Roskos

Appl. Phys. Lett. 77, 453 (2000); http://dx.doi.org/10.1063/1.127007 (3 pages) | Cited 42 times

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We present an experimental demonstration of the generation of far-infrared (terahertz) pulses by photoionization of electrically biased air with amplified laser pulses. The current surge following photoionization of the air with an applied bias field of 10.6 kV/cm leads to the emission of THz pulses with an intensity which can be almost as high as that of THz pulses radiated from a large-area intrinsic-field GaAs emitter. The spectra peak at higher frequency than those of biased large-area GaAs emitters. © 2000 American Institute of Physics.
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51.70.+f Optical and dielectric properties

Metal–insulator–semiconductor tunneling microscope: two-dimensional dopant profiling of semiconductors with conducting atomic-force microscopy

S. Richter, M. Geva, J. P. Garno, and R. N. Kleiman

Appl. Phys. Lett. 77, 456 (2000); http://dx.doi.org/10.1063/1.127008 (3 pages) | Cited 16 times

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A method for two-dimensional carrier profiling is presented, based on tunneling from a conducting atomic-force microscope (AFM) probe tip to a semiconductor sample. Current–voltage data are taken during the AFM scan on a cross-sectioned sample consisting of epitaxial InP multilayers. The results show a clear dependence of the current–voltage characteristics on the carrier concentration and different behavior for n-and p-type InP. Modeling of the data enables one to use this method as a quantitative tool for high-resolution two-dimensional dopant profiling. © 2000 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
61.72.S- Impurities in crystals
73.61.Ey III-V semiconductors
73.40.Gk Tunneling
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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