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24 Jul 2000

Volume 77, Issue 4, pp. 463-603

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Analysis of the activation energy of the subthreshold current in laser- and solid-phase-crystallized polycrystalline silicon thin-film transistors

L. Pichon, A. Mercha, R. Carin, O. Bonnaud, T. Mohammed-Brahim, Y. Helen, and R. Rogel

Appl. Phys. Lett. 77, 576 (2000); http://dx.doi.org/10.1063/1.127049 (3 pages) | Cited 17 times

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Analysis of the thermal and gate-voltage dependences of the current in the subthreshold region is performed on both low-temperature laser-crystallized and solid-phase-crystallized polycrystalline silicon (polysilicon) thin-film transistors (TFTs). Temperature measurements are made at first in order to extract the variations of the activation energy EA of the drain current with the gate voltage. The plot of the subthreshold current versus the measured activation energy leads to an apparent activation energy EA/n, where the n factor is extracted from the slope of this plot. The n factor is close to 1 for laser-crystallized polysilicon TFTs while it is rather close to 2 for solid-phase-crystallized ones. These two values can be attributed to a different defect distribution in the two differently crystallized TFTs polysilicon active layers. © 2000 American Institute of Physics.
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73.61.Cw Elemental semiconductors
81.05.Cy Elemental semiconductors
85.30.Tv Field effect devices
68.55.-a Thin film structure and morphology
61.43.Dq Amorphous semiconductors, metals, and alloys
81.15.Aa Theory and models of film growth
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors

Correlation of mobile and fixed charge creation in protonated field-effect transistors

R. A. B. Devine, K. Vanheusden, and G. V. Herrera

Appl. Phys. Lett. 77, 579 (2000); http://dx.doi.org/10.1063/1.127050 (3 pages) | Cited 2 times

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Protons have been introduced into the 40 nm gate oxides of n-channel metal–oxide–semiconductor field-effect transistors, resulting in the creation of mobile and fixed positive charge. Transistor gate lengths in the range from 5 to 70 μm have been studied. Hysteresis in the threshold voltage as large as −18 V has been measured. An inverse linear relationship has been found between the quantity of mobile and fixed charge generated. The inversion channel electron mobility is found to lie in the range 310–530 cm2 V−1 s−1. © 2000 American Institute of Physics.
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85.30.Tv Field effect devices
61.72.Cc Kinetics of defect formation and annealing
73.20.-r Electron states at surfaces and interfaces
85.30.De Semiconductor-device characterization, design, and modeling
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