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24 Jul 2000

Volume 77, Issue 4, pp. 463-603

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Charge noise analysis of an AlGaAs/GaAs quantum dot using transmission-type radio-frequency single-electron transistor technique

Toshimasa Fujisawa and Yoshiro Hirayama

Appl. Phys. Lett. 77, 543 (2000); http://dx.doi.org/10.1063/1.127038 (3 pages) | Cited 40 times

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Radio-frequency (rf)-operated single-electron transistors (SETs) are high-sensitivity, fast-response electrometers, which are valuable for developing new insights into single-charge dynamics. We investigate high-frequency (up to 1 MHz) charge noise in an AlGaAs/GaAs quantum dot using a transmission-type rf SET technique. The electron capture and emission kinetics on a trap in the vicinity of the quantum dot are dominated by a Poisson process. The maximum bandwidth for measuring single trapping events is about 1 MHz, which is the same as that required for observing single-electron tunneling oscillations in a measurable current ( ∼ 0.1 pA). © 2000 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
07.68.+m Photography, photographic instruments; xerography
85.35.Gv Single electron devices
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy

A. Krtschil, H. Witte, M. Lisker, J. Christen, A. Krost, U. Birkle, S. Einfeldt, D. Hommel, F. Scholz, J. Off, and M. Stutzmann

Appl. Phys. Lett. 77, 546 (2000); http://dx.doi.org/10.1063/1.127039 (3 pages) | Cited 5 times

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In GaN layers grown by molecular beam epitaxy and metalorganic vapor phase epitaxy on c-axis oriented sapphire, a defect-to-band transition at a photon energy of 0.44 eV was found by optical admittance spectroscopy. This transition was investigated as a function of temperature and modulation frequency. The height of the corresponding optical admittance peak shows a thermally activated quenching with an activation energy of 0.4±0.1 eV caused by a thermal carrier emission from the same defect state to the conduction band at higher temperatures. Based on this thermal quenching, the 0.44 eV level is assigned to an electron trap located in the upper half of the gap. The spectral photoionization cross section was determined, resulting in a photoionization energy at 80 K estimated to be below 0.425 eV. The omnipresence of the 0.44 eV electron trap in GaN layers grown by various epitaxial techniques and in different reactors implicates its intrinsic nature. © 2000 American Institute of Physics.
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72.40.+w Photoconduction and photovoltaic effects
71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Spectroscopic measurements on the Andreev reflection probability as a function of temperature

J. Appenzeller, M. Jakob, H. Stahl, J. Knoch, and B. Lengeler

Appl. Phys. Lett. 77, 549 (2000); http://dx.doi.org/10.1063/1.127040 (3 pages)

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The temperature dependence of the Andreev reflection coefficient A(E,T) at a superconductor/normal-metal interface is a key issue for the critical current in a Josephson field-effect transistor at finite temperature. In this letter, we discuss our experimental observations of A(E,T) as a function of temperature determined by point contact spectroscopy. In addition, we point out major discrepancies between our findings and predictions from different theoretical models. © 2000 American Institute of Physics.
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74.50.+r Tunneling phenomena; Josephson effects

Two-dimensional delineation of ultrashallow junctions obtained by ion implantation and excimer laser annealing

Vittorio Privitera, Corrado Spinella, Guglielmo Fortunato, and Luigi Mariucci

Appl. Phys. Lett. 77, 552 (2000); http://dx.doi.org/10.1063/1.127041 (3 pages) | Cited 19 times

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Junctions shallower than 100 nm, obtained by ion implantation and excimer laser annealing, have been characterized in two dimensions by transmission electron microscopy (TEM) on chemically treated samples. The chemical treatment selectively removes silicon as a function of the B concentration, making thinner the regions where B is present in the cross section of the sample, with respect to the n-type substrate. Both secondary ion mass spectrometry and spreading resistance profiling measurements have been performed, in order to quantify the contour line obtained by TEM in terms of B concentration. The results achieved by the two-dimensional technique show interesting features, related to the particular redistribution of B occurring when silicon is melted by excimer laser annealing irradiation. In particular, a rectangular shape of the doped region obtained by laser annealing could be evidenced, caused by the fast diffusion in the melted material, completely different from the typical half-moon-shaped, thermally annealed, two-dimensional B profile. The feasibility of ultrashallow junctions by laser annealing, with depths below 100 nm and high electrical activation, is demonstrated. However, a huge lateral diffusion in the melted silicon is also to be taken into account when considering excimer laser treatments as an alternative to standard rapid thermal annealing. © 2000 American Institute of Physics.
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73.61.Cw Elemental semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.S- Impurities in crystals
66.30.J- Diffusion of impurities

Oxide thinning percolation statistical model for soft breakdown in ultrathin gate oxides

Ming-Jer Chen, Ting-Kuo Kang, Chuan-Hsi Liu, Yih J. Chang, and Kuan-Yu Fu

Appl. Phys. Lett. 77, 555 (2000); http://dx.doi.org/10.1063/1.127042 (3 pages) | Cited 7 times

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An existing cell-based percolation model with parameter correlation can find its potential applications in assessing soft-breakdown (BD) statistics as long as the oxide thinning due to the localized physical damage near the SiO2/Si interface is accounted for. The resulting model is expressed explicitly with the critical trap number per cell nBD and the remaining oxide thickness tox′ both as parameters. Reproduction of time-to-bimodal (soft- and hard-) breakdown statistical data from 3.3-nm-thick gate-oxide samples yields nBD of 3 and 4 for soft and hard breakdown, respectively. The extracted tox′ of 1.0 nm for soft breakdown, plus the transition layer thickness of 0.5 nm in the model, is fairly comparable with literature values from current–voltage fitting. The dimension and area of the localized physically damaged region or percolation path (cell) are quantified as well. Based on the work, the origins of soft and hard breakdown are clarified in the following: (i) soft breakdown behaves intrinsically as hard breakdown, that is, they share the same defect (neutral trap) generation process and follow Poisson random statistics; (ii) both are independent events corresponding to different tox′ requirements; and (iii) hard breakdown takes place in a certain path located differently from that for the first soft breakdown. © 2000 American Institute of Physics.
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77.22.Jp Dielectric breakdown and space-charge effects
85.30.Tv Field effect devices
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Single-crystalline silicon lift-off films for metal–oxide–semiconductor devices on arbitrary substrates

A. Tilke, M. Rotter, R. H. Blick, H. Lorenz, and J. P. Kotthaus

Appl. Phys. Lett. 77, 558 (2000); http://dx.doi.org/10.1063/1.127043 (3 pages) | Cited 3 times

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We present a technique to mount single-crystalline silicon thin films on arbitrary substrates. We demonstrate in detail the preparation of a 190-nm-thin silicon metal–oxide–semiconductor field-effect transistor (MOSFET) on a silicon-on-insulator film lifted from its substrate and bonded to quartz. Functioning of this hybrid MOSFET on a rigid surface at room temperature is demonstrated. © 2000 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
81.05.Cy Elemental semiconductors
85.30.Tv Field effect devices
73.61.Cw Elemental semiconductors
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.-a Thin film structure and morphology

Electrical properties of in situ phosphorus- and boron-doped polycrystalline SiGeC films

I. M. Anteney, G. J. Parker, P. Ashburn, and H. A. Kemhadjian

Appl. Phys. Lett. 77, 561 (2000); http://dx.doi.org/10.1063/1.127044 (3 pages) | Cited 4 times

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The sheet resistance, effective carrier concentration, and Hall mobility of in situ boron- and phosphorus-doped polycrystalline Si0.82−yGe0.18Cy films are presented for carbon contents between 0% and 4%. Phosphorus and boron doping levels of 4×1019 and 2×1020 cm−3 were achieved for the n- and p-type layers, respectively, and remained largely unaffected by carbon content. The phosphorus-doped films showed a dramatic increase in sheet resistivity and a corresponding drop in effective carrier concentration and Hall mobility. In contrast, the boron-doped films showed only a minor increase in resistivity. This is attributed to interstitial carbon increasing the defect density and also shifting the defect energy levels at the grain boundaries towards the valence band. This causes an increase in the grain-boundary energy barrier in n-type layers, but leaves the p-type layers largely unaffected. © 2000 American Institute of Physics.
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73.61.Le Other inorganic semiconductors
81.05.Hd Other semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
72.80.Jc Other crystalline inorganic semiconductors
61.72.Mm Grain and twin boundaries
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
71.55.Ht Other nonmetals
61.72.J- Point defects and defect clusters

Evidence for ferroelectric border traps near the SrBi2Ta2O9/Si interface through capacitance–voltage measurement

W. P. Li, R. Zhang, J. Shen, Y. M. Liu, B. Shen, P. Chen, Y. G. Zhou, J. Li, X. L. Yuan, Z. Z. Chen, Y. Shi, Z. G. Liu, and Y. D. Zheng

Appl. Phys. Lett. 77, 564 (2000); http://dx.doi.org/10.1063/1.127045 (3 pages) | Cited 7 times

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A metal–ferroelectric–semiconductor (MFS) structure has been developed by depositing SrBi2Ta2O9 (SBT) films directly on n-type (100) Si by pulsed laser deposition. In the MFS structure, evidence for ferroelectric border traps in the SBT film has been obtained by high-frequency capacitance–voltage (C–V) measurement. When the ramp rate of voltage is higher than 200 mV/s, typical ferroelectric C–V hysteresis loops with the counterclockwise direction are obtained in C–V plots. When the ramp rate is lower than 80 mV/s, the ferroelectric hysteresis loops are replaced by the trap-induced ones with the clockwise direction. This pronounced change results from the fact that more and more border traps in SBT can communicate with the underlying Si. The border-trap density at the ramp rate of 10 mV/s is as high as 1.8×1012 cm−2. Moreover, the width of the hysteresis loops changes linearly with the logarithmic decrease in ramp rate, which is consistent with the ferroelectric border traps communicating with Si by tunneling or a thermally activated process. © 2000 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
77.80.Dj Domain structure; hysteresis
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.Fg Pulsed laser ablation deposition
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