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24 Jul 2000

Volume 77, Issue 4, pp. 463-603

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AlAs/GaAs quantum cascade lasers based on large direct conduction band discontinuity

Cyrille Becker, Carlo Sirtori, Hideaki Page, Geneviève Glastre, Valentin Ortiz, Xavier Marcadet, Max Stellmacher, and Julien Nagle

Appl. Phys. Lett. 77, 463 (2000); http://dx.doi.org/10.1063/1.127059 (3 pages) | Cited 29 times

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The design and operation of quantum cascade (QC) lasers using AlAs/GaAs coupled quantum wells are reported. In this material system, the conduction band offset at the Γ point (∼1 eV) is much higher than in previously reported QC lasers. The use of high band discontinuity allows us to increase the energy separation among the subbands, thus suppressing thermally activated processes which limit device performance at high temperature. The measured thermal characteristics of these promising devices are strongly improved from previously reported GaAs-based QC lasers: The temperature dependence of the threshold current density is described by a very large T0 (320 K) and the laser slope efficiency does not vary for increasing heat sink temperatures. The maximum operating temperature is 230 K, limited by negative differential resistance effects that occur when the applied bias reaches 8 V. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Fq High-field and nonlinear effects

Discrete energy level separation and the threshold temperature dependence of quantum dot lasers

Oleg B. Shchekin, Gyoungwon Park, Diana L. Huffaker, and Dennis G. Deppe

Appl. Phys. Lett. 77, 466 (2000); http://dx.doi.org/10.1063/1.127012 (3 pages) | Cited 68 times

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Data are presented on one- and two-stack InAs quantum dot lasers that have reduced temperature sensitivity of their lasing threshold. Adjustment of dot size and composition is used to increase the energy separation between the ground and first excited radiative transition energies to 104 meV, with a dot density of ∼ 3.1×1010 cm−2. The one- and two-stack lasers show broad area as-cleaved room temperature threshold current densities as low as 43 and 35 A/cm2, respectively. The wide energy separation between the ground and first excited radiative transitions leads to significant improvements in the temperature sensitivity of threshold. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

High-repetition-rate, all-solid-state, Ti:sapphire-pumped optical parametric oscillator for the mid-infrared

P. J. Phillips, S. Das, and M. Ebrahimzadeh

Appl. Phys. Lett. 77, 469 (2000); http://dx.doi.org/10.1063/1.127013 (3 pages) | Cited 7 times

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We report a low-pump-threshold, all-solid-state subpicosecond optical parametric oscillator (OPO) for the mid-infrared based on periodically poled LiNbO3 and synchronously pumped by a mode-locked Ti:sapphire laser. Using a semimonolithic cavity design and hemispherical focusing, pump power thresholds of 17 mW and mid-infrared idler powers of 64 mW have been obtained in the 3.9–6 μm spectral range in a simple, practical, and compact configuration at pulse repetition rates of up to 322 MHz. The OPO delivers a signal output power of up to 280 mW at ∼35% extraction efficiency and can provide transform-limited signal pulses with durations of 0.4 ps over the spectral range of 1.00–1.14 μm. © 2000 American Institute of Physics.
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42.65.Yj Optical parametric oscillators and amplifiers
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking

Terahertz demultiplexing by a single-shot time-to-space conversion using a film of squarylium dye J aggregates

Makoto Furuki, Minquan Tian, Yasuhiro Sato, Lyong Sun Pu, Satoshi Tatsuura, and Osamu Wada

Appl. Phys. Lett. 77, 472 (2000); http://dx.doi.org/10.1063/1.127014 (3 pages) | Cited 35 times

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We applied time-to-space conversion using femtosecond nonlinear-optical response of squarylium-dye (SQ) J-aggregates film. A pump pulse and a train of four probe pulses were illuminated on the same area (10 mm ϕ) of the film in direction of oblique and normal to the film plane, respectively. Due to the oblique illumination, the pump pulse met probe pulses (interval time: 1 ps) at separate places. The film picked out part of each probe pulse by its transmittance change, which was observed for a transmitted image of spatially separated four lines. Response time of the SQ J aggregates is enough for the single-shot 1 THz demultiplexing. © 2000 American Institute of Physics.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Wc Optical coatings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.70.Mp Nonlinear optical crystals
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO

Hiromichi Ohta, Ken-ichi Kawamura, Masahiro Orita, Masahiro Hirano, Nobuhiko Sarukura, and Hideo Hosono

Appl. Phys. Lett. 77, 475 (2000); http://dx.doi.org/10.1063/1.127015 (3 pages) | Cited 268 times

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An ultraviolet light-emitting diode (LED) operating at room temperature was realized using a p–n heterojunction composed of transparent conductive oxides, p-SrCu2O2 and n-ZnO. Multilayered films prepared by a pulsed-laser deposition technique were processed by conventional photolithography with the aid of reactive ion etching to fabricate the LED device. A rather sharp emission band centered at 382 nm was generated when a forward bias voltage exceeding the turn-on voltage of 3 V was applied to the junction. The emission may be attributed to a transition associated with the electron–hole plasma of ZnO. © 2000 American Institute of Physics.
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73.61.Ga II-VI semiconductors
73.61.Le Other inorganic semiconductors
78.66.Hf II-VI semiconductors
85.60.Jb Light-emitting devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Fg Pulsed laser ablation deposition
85.40.Hp Lithography, masks and pattern transfer
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning
81.05.Dz II-VI semiconductors

Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor

V. I. Dimitrova, P. G. Van Patten, H. H. Richardson, and M. E. Kordesch

Appl. Phys. Lett. 77, 478 (2000); http://dx.doi.org/10.1063/1.127016 (2 pages) | Cited 39 times

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Electroluminescence (EL) studies of AlN:Er alternating-current thin-film electroluminescent (ACTFEL) devices were performed at 300 K. Thin films of Er-doped AlN, ∼ 200 nm thick, were grown on indium–tin–oxide/aluminum–titanium–oxide/glass substrates using rf magnetron sputtering in a nitrogen atmosphere. The turn-on voltage was found to be around 70–80 and 100 V for ACTFEL devices without and with a top insulator layer. Sharp emission lines in the visible region were observed which correspond to known transitions of the Er3+ ion. Temperature-dependent cathodoluminescence studies corroborate the EL results, and show that optimum device performance is attained near 300 K. © 2000 American Institute of Physics.
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78.66.Fd III-V semiconductors
85.60.Jb Light-emitting devices
78.60.Hk Cathodoluminescence, ionoluminescence
78.60.Fi Electroluminescence

Diffraction of guided optical waves by surface acoustic waves in GaN

R. Rimeika, D. Ciplys, R. Gaska, J. W. Yang, M. A. Khan, M. S. Shur, and E. Towe

Appl. Phys. Lett. 77, 480 (2000); http://dx.doi.org/10.1063/1.127017 (3 pages) | Cited 13 times

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We report on acousto-optical diffraction of the guided optical modes (λ = 633 nm) in GaN layers grown on (0001) sapphire substrates. The diffraction of both transverse electric (TE) and transverse magnetic (TM) modes has been observed. The dependence of the diffraction efficiency on the surface acoustic wave (SAW) power is in good agreement with Raman-Nath theory. The values of acousto-optic figure of merit, M2, and effective photoelastic constants p have been determined. For the SAW propagating in [1math00] direction, the extracted values are M2 = 1.54×10−15 s3/kg, p = 0.061 (TE modes) and M2 = 1.95×10−15 s3/kg, p = 0.066 (TM modes). These values of M2 correspond to 1 and 1.3 of the acousto-optic figure for fused quartz. The obtained results demonstrate the potential of GaN-based structures for the development of blue–ultraviolet acousto-optical devices. © 2000 American Institute of Physics.
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68.35.Gy Mechanical properties; surface strains
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
42.79.Gn Optical waveguides and couplers

Upconversion luminescence of Er3+ in alkali bismuth gallate glasses

S. Q. Man, E. Y. B. Pun, and P. S. Chung

Appl. Phys. Lett. 77, 483 (2000); http://dx.doi.org/10.1063/1.127018 (3 pages) | Cited 66 times

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Frequency upconversion of Er3+ in alkali bismuth gallate glasses have been investigated. The upconversion mechanisms are discussed, and the dominant mechanisms are excited state absorption for the 2H11/2→4I15/2 and 4S3/2→4I15/2 transitions, and energy transfer upconversion for the 4F9/2→4I15/2 transition. Intense green (around 525–550 nm) and red (around 660 nm) emission bands were observed under 800 nm excitation. At a pump intensity of 15.6 W/cm2, frequency upconversion efficiencies of 2.1×10−2 and 4.8×10−3 were obtained for the green and red emissions, respectively. The results are the highest among doped oxide glasses, and are comparable to those reported for Er3+/Yb3+ codoped fluoride glasses. © 2000 American Institute of Physics.
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78.55.Hx Other solid inorganic materials

Electro-optic field mapping system utilizing external gallium arsenide probes

K. Yang, L. P. B. Katehi, and J. F. Whitaker

Appl. Phys. Lett. 77, 486 (2000); http://dx.doi.org/10.1063/1.127019 (3 pages) | Cited 27 times

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External electro-optic probes fabricated from two different crystal orientations of GaAs have been implemented in an electro-optic sampling system that is capable of mapping three independent orthogonal components of free-space electric fields. The results obtained for the radiated field from a microstrip patch antenna by the GaAs probes are compared with results on the same antenna obtained using bismuth silicate and lithium tantalate probes. An 8 μm spatial resolution has also been demonstrated for the electro-optic field-mapping system, and the capability for the system to measure field patterns at frequencies up to 100 GHz has been shown. © 2000 American Institute of Physics.
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73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.20.Jq Electro-optical effects
84.40.Ba Antennas: theory, components and accessories
61.50.-f Structure of bulk crystals
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