APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

24 Jul 2000

Volume 77, Issue 4, pp. 463-603

Return to All Sections
back to top
RSS Feeds

Functional separation of biasing and sustaining voltages in two-frequency capacitively coupled plasma

T. Kitajima, Y. Takeo, Z. Lj. Petrović, and T. Makabe

Appl. Phys. Lett. 77, 489 (2000); http://dx.doi.org/10.1063/1.127020 (3 pages) | Cited 110 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Separation of the effects of rf sources used for biasing the wafer and for sustaining the plasma is studied by measuring the space profiles of net excitation rate of Ar(3p5) for a two-frequency capacitively coupled plasma as a representation of a typical oxide etcher. Measurements were performed in Ar and in CF4/Ar mixtures. For biasing supply operating at low frequency, 700 kHz, it was shown that the effect of the voltage becomes significantly smaller as the sustaining voltage is changed from high frequency, 13.56 MHz, to very high frequency (VHF), 100 MHz, and it even disappears for pulsed operation in mixtures. This is the result of the low dc self-bias at the VHF electrode that allows the high energy secondary electrons to leave the plasma without excessive contribution to ionization and dissociation. © 2000 American Institute of Physics.
Show PACS
52.80.Pi High-frequency and RF discharges
52.77.Bn Etching and cleaning
52.77.Dq Plasma-based ion implantation and deposition
81.65.Cf Surface cleaning, etching, patterning

Antenna configuration for uniform large-area inductively coupled plasma production

S. S. Kim, H. Y. Chang, C. S. Chang, and N. S. Yoon

Appl. Phys. Lett. 77, 492 (2000); http://dx.doi.org/10.1063/1.127021 (3 pages) | Cited 23 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An antenna configuration for uniform plasma generation in a large-area inductively coupled plasma (ICP) source is presented and investigated using numerical analysis. The numerical results show that a properly tuned, segmented coil system with an external variable capacitor can allow antenna voltage, currents, and plasma uniformity to be controlled in the large-area ICP source. The key element of this concept is to induce LC-resonance in the coil system by the external capacitance variation. Through the LC-resonance, not only a small antenna voltage can be obtained, but also a selected coil current near a low plasma density regime can be significantly enhanced. Self-consistent fluid simulations for Ar and Cl2 plasmas indicate that the radial plasma spread can be optimized near the LC-resonance condition. © 2000 American Institute of Physics.
Show PACS
52.50.-b Plasma production and heating
52.65.-y Plasma simulation
52.40.Fd Plasma interactions with antennas; plasma-filled waveguides

Measurement of negative-ion density in high-density C4F8 plasma using a laser photodetachment technique combined with a millimeter-wave open resonator

A. Kono and K. Kato

Appl. Phys. Lett. 77, 495 (2000); http://dx.doi.org/10.1063/1.127022 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A technique for measuring negative-ion density in high-density plasmas used for materials processing has been developed; negative ions were detected by measuring the electron-density perturbation caused by laser photodetachment using a millimeter-wave open resonator. The measured negative-ion density for an inductively-coupled C4F8(5%–20%)/Ar plasma with electron densities around 1011 cm−3 at a pressure of 25 mTorr was comparable to the electron density. The results suggest that species produced via dissociation of C4F8 attaches electrons as effectively as C4F8. © 2000 American Institute of Physics.
Show PACS
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.-b Plasma properties
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close