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31 Jul 2000

Volume 77, Issue 5, pp. 609-762

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Experimental demonstration of a leadless quantum-dot cellular automata cell

Islamshah Amlani, Alexei O. Orlov, Ravi K. Kummamuru, Gary H. Bernstein, Craig S. Lent, and Gregory L. Snider

Appl. Phys. Lett. 77, 738 (2000); http://dx.doi.org/10.1063/1.127103 (3 pages) | Cited 25 times

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We present the experimental characterization of a leadless (floating) double-dot system and a leadless quantum-dot cellular automata cell, where aluminum metal islands are connected to the environment only by capacitors. Here, single electron charge transfer can be accomplished only by the exchange of an electron between the dots. The charge state of the dots is monitored using metal islands configured as electrometers. We show improvements in the cell performance relative to leaded dots, and discuss possible implications of our leadless design to the quantum-dot cellular automata logic implementation. © 2000 American Institute of Physics.
Show PACS
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.35.Ds Quantum interference devices
03.67.Lx Quantum computation architectures and implementations
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 μm

A. G. U. Perera, S. G. Matsik, H. C. Liu, M. Gao, M. Buchanan, W. J. Schaff, and W. Yeo

Appl. Phys. Lett. 77, 741 (2000); http://dx.doi.org/10.1063/1.127104 (3 pages) | Cited 23 times

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GaAs/InGaAs far-infrared quantum well photodetectors based on a bound-to-continuum intersubband transition with a (zero response) cutoff wavelength of 35 μm are reported. A peak responsivity of 0.45 A/W and detectivity of 6.0×109 cmmath/W at a wavelength of 31 μm and a temperature of 4.2 K have been experimentally achieved. Infrared response was observed at temperatures up to 18 K. A calculated responsivity spectrum using a bound-to-continuum line shape corrected for phonon absorption is fitted to the experimental response. The calculated line shape without absorption gives a cutoff wavelength of 38 μm with a peak responsivity of 0.50 A/W and a detectivity of 6.6×109 cmmath/W at 32 μm. © 2000 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Single-electron detector and counter

N. J. Stone and H. Ahmed

Appl. Phys. Lett. 77, 744 (2000); http://dx.doi.org/10.1063/1.127105 (3 pages) | Cited 8 times

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An electron detector, constructed with highly doped silicon nanowires, is described. It is shown that, at a temperature of 4.2 K, the presence or absence of a single excess electron on a storage node can be recognized. The detector can also be used to count the precise number of electrons transferred to the node. © 2000 American Institute of Physics.
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85.35.Gv Single electron devices
85.35.Ds Quantum interference devices

Selective excitation and photoinduced bleaching of defects in InAlGaAs/GaAs high-power diode lasers

J. W. Tomm, A. Bärwolff, T. Elsaesser, and J. Luft

Appl. Phys. Lett. 77, 747 (2000); http://dx.doi.org/10.1063/1.127106 (3 pages) | Cited 5 times

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Mounting-induced defects in semiconductor quantum-well (QW) lasers are investigated by photocurrent spectroscopy. The defects are located in the laser waveguides and give rise to an absorption band below the QW band gap with a maximum absorption cross section of σ = 2×10−15 cm2. We observe a nonlinear fully reversible photobleaching of the defects and a resulting increase of QW photocurrent upon continuous wave irradiation of the devices, demonstrating a direct interaction between quantum-confined carriers and a defect level. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
73.61.Ey III-V semiconductors
73.50.Pz Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors

Dangling-bond defect state creation in microcrystalline silicon thin-film transistors

R. B. Wehrspohn, M. J. Powell, S. C. Deane, I. D. French, and P. Roca i Cabarrocas

Appl. Phys. Lett. 77, 750 (2000); http://dx.doi.org/10.1063/1.127107 (3 pages) | Cited 22 times

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We analyze the threshold voltage shift in microcrystalline Si thin-film transistors (TFTs), in terms of a recently developed thermalization energy concept for dangling-bond defect state creation in amorphous Si TFTs. The rate of the threshold voltage shift in microcrystalline Si TFTs is much lower than in amorphous Si TFTs, but the characteristic energy for the process, which we identify as the mean energy to break a Si–Si bond, is virtually the same. This suggests that the same basic Si–Si bond breaking process is responsible for the threshold voltage shift in both cases. The lower magnitude in microcrystalline Si TFTs is due to a much lower attempt frequency for the process. We interpret the attempt frequency in amorphous and microcrystalline silicon in terms of the localization length of the electron wave function and the effect of stabilizing H atoms being located only at grain boundaries. © 2000 American Institute of Physics.
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85.30.Tv Field effect devices
71.55.Jv Disordered structures; amorphous and glassy solids
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

GaN/W/W-oxide metal base transistor with very large current gain and power gain

K. Mochizuki, K. Uesugi, P. M. Asbeck, J. Gotoh, T. Mishima, K. Hirata, and H. Oda

Appl. Phys. Lett. 77, 753 (2000); http://dx.doi.org/10.1063/1.127108 (3 pages) | Cited 2 times

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We demonstrate a GaN/W/W-oxide metal base transistor (MBT) whose collector is formed by oxidizing the intrinsic W base. The thickness of the nonoxidized intrinsic base of the fabricated collector-up MBT on a sapphire substrate was estimated to be 2–3 nm. Although the MBT showed large leakage, subtraction of the leakage from collector current revealed that the transistor had a very large small-signal direct current (dc) current gain of 87 dB and a dc power gain of 50 dB. This indicates that the GaN-based MBT is a possible candidate for microwave and millimeterwave amplifiers as well as for high-speed integrated circuits used in optical fiber communication system. © 2000 American Institute of Physics.
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85.30.Pq Bipolar transistors
84.40.-x Radiowave and microwave (including millimeter wave) technology
85.30.De Semiconductor-device characterization, design, and modeling

Tailoring the colossal magnetoresistivity: La0.7(Pb0.63Sr0.37)0.3MnO3 thin-film uncooled bolometer

Alvydas Lisauskas, S. I. Khartsev, and Alex Grishin

Appl. Phys. Lett. 77, 756 (2000); http://dx.doi.org/10.1063/1.127109 (3 pages) | Cited 40 times

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See Also: Erratum

Show Abstract
Epitaxial Ca, Sr, and Pb doped manganite films of various compositions and thickness have been prepared to tailor metal-to-semiconductor phase transition to room temperature. Continuous series of solid solutions La0.7(Pb1−xSrx)0.3MnO3 grown by the pulsed laser deposition technique were found to possess superior performance regarding the maximum of temperature coefficient of resistivity (TCR) @300 K. In these films phase transition temperature Tc ranges from 266 to 327 K. We have engineered the film of the optimum composition x = 0.37 exhibiting the maximum of TCR = 7.4% K−1 @295 K. Relatively low excess noise (normalized value γ/n of 3×10−21 cm3) has been achieved due to the epitaxial quality of the fabricated film. Using this film, infrared radiation bolometer demonstrator, operating at room temperature, has been built and tested. The bolometer resolves the noise equivalent temperature difference as low as 120 nK/math and shows signal-to-noise ratio SNR = 8×106 math/K, responsivity math = 0.6 V/W, detectivity D = 0.9×107 cmmath/W, and noise equivalent power NEP = 3×10−8 Wmath at 30 Hz frame frequency. For micromachined thermally isolated La0.7(Pb0.63Sr0.37)0.3MnO3 thin-film bolometer one can expect to get responsivity about 4×103 V/W and detectivity higher than 109 cmmath/W @30 Hz. © 2000 American Institute of Physics.
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
75.47.Gk Colossal magnetoresistance
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
75.47.De Giant magnetoresistance
75.50.Dd Nonmetallic ferromagnetic materials
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
68.55.Nq Composition and phase identification
81.15.Fg Pulsed laser ablation deposition
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