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31 Jul 2000

Volume 77, Issue 5, pp. 609-762

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Significant reduction of leakage current in the TiO2/Si structure by the insertion of the CeO2 intermediate layer

Geunhag Bae, Youngil Song, Donggeun Jung, and Yonghan Roh

Appl. Phys. Lett. 77, 729 (2000); http://dx.doi.org/10.1063/1.127100 (3 pages) | Cited 3 times

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The insertion of the CeO2 intermediate layer between the TiO2 layer and the Si substrate reduced the leakage current significantly after rapid thermal annealing (RTA) in O2 ambient for 3 min. After RTA, the TiO2/CeO2/Si structure showed a significantly lower leakage current than the TiO2/Si structure. At a proper voltage of −2 V, which was defined as the difference between the applied gate bias and the flatband voltage, the leakage current density of the TiO2/CeO2/Si structure was ∼ 10−8 A/cm2, while the leakage current density of the TiO2/Si sample was ∼ 10−2 A/cm2. The formation of the intermixed structure of TiO2 and CeO2 at the TiO2/CeO2 interface by RTA was thought to contribute to the reduction of the leakage current. © 2000 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing

Cluster polarization of Cd2Nb2O7 compound

Chen Ang, L. E. Cross, Ruyan Guo, and A. S. Bhalla

Appl. Phys. Lett. 77, 732 (2000); http://dx.doi.org/10.1063/1.127101 (3 pages) | Cited 23 times

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The direct-current (dc) electric-field dependence of dielectric constant around paraelectric–ferroelectric transition in Cd2Nb2O7 has been studied. The results show significant suppression of the dielectric constant by the application of dc bias. The electric-field dependence of the dielectric constant at the temperature around paraelectric–ferroelectric phase transition can be well described by the modified Devenshire relation including a cluster term, i.e., ε(E) = ε1−ε2E2+ε3E4+(Px/ε0)[cosh(Ex)]−2. The fit parameters indicate that the polar-cluster carries polarization P = ∼ 0.5–2.5 mC/m2 with the cluster size of L = ∼ 11–15 nm. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.B- Phase transitions and Curie point
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization

Dynamics of resonance phenomenon and negative capacitances in the dielectric response of materials

Jean-Claude M’Peko

Appl. Phys. Lett. 77, 735 (2000); http://dx.doi.org/10.1063/1.127102 (3 pages) | Cited 6 times

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Thermoelectric characterization performed in this work on BaFe12O19 and BaTiO3 at 1 kHz involved anomalous negative capacitances over higher temperatures. By using alternating-current analysis techniques, we ratify our previous observations on their association with an inductive component leading to a resonance-type phenomenon. The dynamics of this latter, mostly expected to act rather over higher frequencies (>106 Hz), is carefully examined by using a simple but consistent model. Its large stretching to lower frequencies is found to be caused by the inner dynamics of the material dielectric response when becoming governed, over higher temperatures, by the material–electrode interface properties. © 2000 American Institute of Physics.
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77.22.Ch Permittivity (dielectric function)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.-e Ferroelectricity and antiferroelectricity
77.65.Fs Electromechanical resonance; quartz resonators
72.20.Pa Thermoelectric and thermomagnetic effects
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