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7 Aug 2000

Volume 77, Issue 6, pp. 767-915

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Investigation of interface and bulk fatigue scenarios in sol-gel derived Pb(Zr0.5Ti0.5)O3 films by asymmetric field driving

Biao Li, F. Koch, X. J. Meng, J. G. Cheng, and J. H. Chu

Appl. Phys. Lett. 77, 898 (2000); http://dx.doi.org/10.1063/1.1306609 (3 pages) | Cited 6 times

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A method to distinguish the bulk and interface scenarios of fatigue in sol-gel derived Pb(Zr0.5Ti0.5)O3 (PZT) thin films on Pt and LaNiO3 (LNO) substrates is proposed based on the asymmetric electric field driving of capacitors. The “hard” and “soft” failures of polarization, which are typical for sputtering and sol-gel deposited PZT, respectively, are realized in sol-gel derived Pt/PZT/Pt capacitors by changing the asymmetricity of driving pulses, indicating that the interface plays an important role in the polarization breakdown. For Pt/PZT/LNO capacitors, it is shown that the bulk pinning of domains appears to be more evident than the interface pinning. A model based on the electromigration and entrapment of charged defects subjected to the asymmetric field is also given, and the plausible approximation of space charge field versus charge density is discussed. © 2000 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.22.Jp Dielectric breakdown and space-charge effects
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
66.30.Qa Electromigration
71.55.Ht Other nonmetals
73.20.Hb Impurity and defect levels; energy states of adsorbed species
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