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14 Aug 2000

Volume 77, Issue 7, pp. 921-1064

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Pyroelectric properties in sol–gel derived barium strontium titanate thin films using a highly diluted precursor solution

Jian-Gong Cheng, Jun Tang, Jun-Hao Chu, and Ai-Jun Zhang

Appl. Phys. Lett. 77, 1035 (2000); http://dx.doi.org/10.1063/1.1289038 (3 pages) | Cited 30 times

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The pyroelectric coefficient and pyroelectric infrared response in the sol–gel derived Ba0.8Sr0.2TiO3 thin films have been studied for possible infrared detector applications. The measured pyroelectric coefficient is larger than 3.1×10−4 C/m2 K at temperatures ranging from 10 to 26 °C and reaches the maximum value of 4.1×10−4 C/m2 K at 16 °C. The infrared detectivity of 4.6×106 cm Hz1/2 W−1 has been obtained at 19 °C and 10 Hz in the Ba0.8Sr0.2TiO3 films deposited on thick (500 μm) platinum coated silicon substrates. The better infrared response can be expected by the improvement in the thermal isolation of pyroelectric element and the electrode materials. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
77.70.+a Pyroelectric and electrocaloric effects
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity

Dielectric properties of lead zirconate titanate thin films deposited on metal foils

Q. Zou, H. E. Ruda, B. G. Yacobi, K. Saegusa, and M. Farrell

Appl. Phys. Lett. 77, 1038 (2000); http://dx.doi.org/10.1063/1.1289060 (3 pages) | Cited 20 times

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Ferroelectric lead zirconate titanate (PZT) thin films deposited on metal foil substrates are suitable for developing a wide range of applications. In this letter, we report on PZT films deposited on a variety of foils, including titanium, stainless steel, brass, and nickel alloys, using sol–gel processing. The dielectric properties were shown to depend strongly on the foil material. Excellent properties for capacitors, including high dielectric constant (ε = 400), low dielectric loss (loss tangent of <5%), and low leakage current (below 5×10−8 A at 5 V) were obtained on titanium and good results were also obtained on other foils, such as stainless steel and brass foils. Also, excellent high-frequency properties were observed for capacitors on titanium, stainless steel, and brass foils. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Structural, dielectric, and ferroelectric properties of compositionally graded (Pb,La)TiO3 thin films with conductive LaNiO3 bottom electrodes

Dinghua Bao, Nobuyasu Mizutani, Xi Yao, and Liangying Zhang

Appl. Phys. Lett. 77, 1041 (2000); http://dx.doi.org/10.1063/1.1289063 (3 pages) | Cited 47 times

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We report structural, dielectric, and ferroelectric properties of compositionally graded (Pb,La)TiO3 thin films on LaNiO3/SiO2/Si substrates, where all the films were prepared by the sol-gel technique. The crystalline orientation and surface morphology of the graded films were closely related to the deposition sequence of film layer. Upgraded film exhibited (100) preferentially oriented growth, whereas downgraded film showed a randomly oriented growth, where the films with La content increasing or decreasing gradually along film thickness from the substrate to the top surface are called “upgraded” or “downgraded” films, respectively. The dielectric constants, for upgraded and downgraded films annealed at 650 °C for 60 min, were found to be 659 and 641, respectively. The thin films had large polarization offsets in hysteresis loops when driven by an alternating electric field. The magnitude of the offsets displayed a power law dependence on the electric field, and the direction of the offsets depended on the direction of the composition gradient with respect to the substrate. The leakage current of the upgraded film was 3.43×10−8 A/cm2 at the voltage of 3 V. These results showed that the compositionally graded (Pb,La)TiO3 thin films had excellent dielectric properties and abnormal ferroelectric properties which can be used in various microelectronic devices. © 2000 American Institute of Physics.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.66.Bi Elemental solids
61.66.Dk Alloys
77.22.Ch Permittivity (dielectric function)
81.40.Gh Other heat and thermomechanical treatments
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Temperature dependence of capacitance/current–voltage characteristics of highly (0001)-oriented YMnO3 thin films on Si

Woo-Chul Yi, Chang-Su Seo, Sook-Il Kwun, and Jong-Gul Yoon

Appl. Phys. Lett. 77, 1044 (2000); http://dx.doi.org/10.1063/1.1289067 (3 pages) | Cited 16 times

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Highly (0001)-oriented YMnO3 thin films on Si(100) substrates were obtained by using a stable precursor solution and rapid thermal annealing at a low temperature of 650 °C in a chemical solution deposition process. Temperature-dependent capacitance–voltage (C–V) and current–voltage (I–V) characteristics were discussed in a metal-ferroelectric-semiconductor structure. At 300 K, the voltage-dependent increase of the memory window (ΔV) in the C–V curve and the asymmetric I–V curve were attributed to the formation of positive interfacial charges by field- and thermal-excited electron transport. On the other hand, at 220 K, the voltage-independent ΔV was attributed to ferroelectric polarization switching. © 2000 American Institute of Physics.
Show PACS
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
84.32.Tt Capacitors
77.80.Fm Switching phenomena

Self-biased dielectric bolometer from epitaxially grown Pb(Zr,Ti)O3 and lanthanum-doped Pb(Zr,Ti)O3 multilayered thin films

Weiguo Liu, Bin Jiang, and Weiguang Zhu

Appl. Phys. Lett. 77, 1047 (2000); http://dx.doi.org/10.1063/1.1289064 (3 pages) | Cited 9 times

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A self-biased dielectric bolometer has been realized by epitaxially grown lead zirconate titanate Pb1.1(Zr0.3Ti0.7)O3 (PZT 30/70) and lanthanum-doped lead zirconate titanate Pb0.83La0.17(Zr0.3Ti0.7)0.9575O3 (PLZT 17/30/70) multilayered thin films using the sol-gel technique. The high-resolution transmission electron microscopy images and electron diffraction pattern showed that the multilayered film had its preferred (111) orientation and the epitaxial growth between the PZT 30/70 and PLZT 17/30/70 layers. The self-biased phenomenon and a large pyroelectric current were observed in the prepoled sample without any external bias at the PLZT 17/30/70 phase transition temperature of 120 °C. Pyroelectric coefficient as high as 990 μC/m2K is obtained in the multilayer thin films around 120 °C. It is obvious that there exists an induced polarization in the PLZT 17/30/70 layer. We attribute this self-biased effect to the strong remnant polarization in the immediately contacted tetragonal PZT 30/70 layers. © 2000 American Institute of Physics.
Show PACS
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.35.Ct Interface structure and roughness
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
77.80.B- Phase transitions and Curie point
77.22.Ej Polarization and depolarization
77.70.+a Pyroelectric and electrocaloric effects
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