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21 Aug 2000

Volume 77, Issue 8, pp. 1071-1232

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Influence of oxygen on band alignment at the organic/aluminum interface

R. I. R. Blyth, S. A. Sardar, F. P. Netzer, and M. G. Ramsey

Appl. Phys. Lett. 77, 1212 (2000); http://dx.doi.org/10.1063/1.1289497 (3 pages) | Cited 17 times

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The presence of adventitious oxygen is inevitable when organic/metal interfaces are formed by evaporation in high vacuum (10−6 mbar.). In this letter, we highlight the importance of this oxygen for band alignment, and hence, performance, in organic-based devices. The influence of controlled amounts of oxygen on band alignment in benzene/aluminum model cathode interfaces has been studied using ultraviolet photoemission in ultrahigh vacuum. We show that even small amounts of oxygen significantly lower the aluminum work function with concomitant improvement in band alignment. © 2000 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.30.+y Surface double layers, Schottky barriers, and work functions
79.60.Jv Interfaces; heterostructures; nanostructures
73.40.Ns Metal-nonmetal contacts

Improvement of charge trapping by hydrogen post-oxidation annealing in gate oxide of 4H–SiC metal–oxide–semiconductor capacitors

Won-ju Cho, Ryoji Kosugi, Kenji Fukuda, Kazuo Arai, and Seiji Suzuki

Appl. Phys. Lett. 77, 1215 (2000); http://dx.doi.org/10.1063/1.1289806 (3 pages) | Cited 7 times

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The effect of hydrogen postoxidation annealing (POA) on the reliability of gate oxide formed in 4H–SiC metal–oxide–semiconductor (MOS) capacitors has been investigated. Argon POA at 1200 °C and hydrogen POA were carried out over a temperature range of 400–1000 °C to improve the properties of 4H–SiC/SiO2 interface and thermal gate oxide. Interface state density Dit decreases as the temperature of hydrogen POA increases and saturates at 800 °C. Additionally, the characteristics of charge trapping in gate oxide against the electron injection was greatly improved by the hydrogen POA above 800 °C. Hence, we can conclude that the hydrogen POA at high temperature is effective for improving the Dit and reliability of gate oxide formed in 4H–SiC MOS devices. © 2000 American Institute of Physics.
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84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.At Surface states, band structure, electron density of states
81.40.Gh Other heat and thermomechanical treatments
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