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21 Aug 2000

Volume 77, Issue 8, pp. 1071-1232

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Microstructure and dielectric properties of Ba1−xSrxTiO3 films grown on LaAlO3 substrates

Y. Gim, T. Hudson, Y. Fan, C. Kwon, A. T. Findikoglu, B. J. Gibbons, B. H. Park, and Q. X. Jia

Appl. Phys. Lett. 77, 1200 (2000); http://dx.doi.org/10.1063/1.1289272 (3 pages) | Cited 79 times

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We report a systematic study of the microstructure and dielectric properties of barium strontium titanate, Ba1−xSrxTiO3, films grown by laser ablation on LaAlO3 substrates, where x = 0.1–0.9 at an interval of 0.1. X-ray diffraction analysis shows that when x<0.4, the longest unit-cell axis is parallel to the plane of the substrate but perpendicular as x approaches 1. Dielectric constant versus temperature measurements show that the relative dielectric constant has a maximum value and that the peak temperatures corresponding to the maximum relative dielectric constant are about 70 °C higher when x ⩽ 0.4 but similar when x>0.4, compared with the peak temperatures of the bulk Ba1−xSrxTiO3. At room temperature, the dielectric constant and tunability are relatively high when x ⩽ 0.4 but start to decrease rapidly as x increases. © 2000 American Institute of Physics.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.15.Fg Pulsed laser ablation deposition
68.55.-a Thin film structure and morphology
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)

Dielectric and ferroelectric properties of compositionally graded (Pb,La)TiO3 thin films on Pt/Ti/SiO2/Si substrates

Dinghua Bao, Nobuyasu Mizutani, Xi Yao, and Liangying Zhang

Appl. Phys. Lett. 77, 1203 (2000); http://dx.doi.org/10.1063/1.1289260 (3 pages) | Cited 28 times

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Compositionally graded (Pb,La)TiO3 thin films were prepared on platinum-coated silicon substrates by a sol–gel technique. The crystalline orientation and surface morphology of the graded films were closely related to the deposition sequence of the film layer. The dielectric constants, for up-graded and down-graded films annealed at 600 °C for 60 min, were found to be 765 and 374, respectively. The compositionally graded films had large polarization offsets in hysteresis loops when driven by an alternating electric field. The magnitude of polarization offsets displayed a power-law dependence on the electric field, and the direction of the offsets depended on the direction of the composition gradient with respect to the substrate. The offset, 250 μC/cm2 at the driving electric field of 250 kV/cm, was obtained. These results showed that the sol–gel technique was a very promising route for the realization of compositionally graded ferroelectric thin films and the compositionally-graded (Pb,La)TiO3 thin films had excellent dielectric properties and abnormal ferroelectric properties which can be used in various microelectronic devices. © 2000 American Institute of Physics.
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77.80.-e Ferroelectricity and antiferroelectricity
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis

Electrical domain fixing of photorefractive index gratings in (K0.5Na0.5)0.2(Sr0.75Ba0.25)0.9Nb2O6 crystals

Xiaonong Shen, Jianhua Zhao, Ruibo Wang, Zhenxiang Cheng, Shujun Zhang, and Huanchu Chen

Appl. Phys. Lett. 77, 1206 (2000); http://dx.doi.org/10.1063/1.1289492 (3 pages) | Cited 4 times

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Electrical domain fixing in Cu- and Mn-doped (K0.5Na0.5)0.2(Sr0.75Ba0.25)0.9Nb2O6 (KNSBN) crystals is presented. The relation between the applied field and the revealed grating in single and multidomain crystals is investigated. In multidomain Mn-doped KNSBN, a revealing efficiency of over 233% is obtained. The mechanism of domain fixing in single and multidomain crystal is discussed. © 2000 American Institute of Physics.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
42.79.Dj Gratings
42.40.Eq Holographic optical elements; holographic gratings
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Ln Holographic recording materials; optical storage media
42.70.Gi Light-sensitive materials
42.40.Ht Hologram recording and readout methods

Microstructure of (Ba, Sr)TiO3 thin films deposited by physical vapor deposition at 480 °C and its influence on the dielectric properties

Matthew C. Werner, Indrajit Banerjee, Paul C. McIntyre, Noriaki Tani, and Michio Tanimura

Appl. Phys. Lett. 77, 1209 (2000); http://dx.doi.org/10.1063/1.1288155 (3 pages) | Cited 22 times

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The orientation and microstructure of (Ba, Sr)TiO3 (BST) deposited via physical vapor deposition at 480 °C was studied using x-ray diffraction, atomic force microscopy, and transmission electron microscopy. Annealing Pt/BST (previously annealed at 400 °C) at 800 °C in O2 results in grain growth, enhancement of the {100} texture and a 20% increase in the dielectric constant. The 400 °C annealed films become more textured in the {100} orientation as film thickness is increased. Finally, it appears that an interfacial capacitance, rather than the “bulk” dielectric constant limits the total capacitance density of the films. © 2000 American Institute of Physics.
Show PACS
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
61.72.Cc Kinetics of defect formation and annealing
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