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21 Aug 2000

Volume 77, Issue 8, pp. 1071-1232

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Field emission from boron-doped polycrystalline diamond film at the nanometer level within grains

I. Andrienko, A. Cimmino, D. Hoxley, S. Prawer, and R. Kalish

Appl. Phys. Lett. 77, 1221 (2000); http://dx.doi.org/10.1063/1.1289498 (3 pages) | Cited 7 times

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Surface morphology, conductivity, and field emission properties of boron-doped polycrystalline diamond film have been studied using scanning tunneling microscopy, current imaging tunneling spectroscopy, and separation-voltage (S–V) spectroscopy focusing on the properties within a single grain. The emission properties show significant spatial variations within single grains at the nanometer level. S–V spectroscopy provided direct values of the field required for the emission from nanometer-sized structures at the surface. Strong correlation between surface conductivity and low-field emission has been found. The results suggest that the emission properties of the film on the nanometer level are determined by local hydrogen termination. © 2000 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
73.61.Cw Elemental semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.25.+i Surface conductivity and carrier phenomena
73.20.At Surface states, band structure, electron density of states
85.45.Db Field emitters and arrays, cold electron emitters

Room-temperature negative differential resistance in nanoscale molecular junctions

J. Chen, W. Wang, M. A. Reed, A. M. Rawlett, D. W. Price, and J. M. Tour

Appl. Phys. Lett. 77, 1224 (2000); http://dx.doi.org/10.1063/1.1289650 (3 pages) | Cited 182 times

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Molecular devices are reported utilizing active self-assembled monolayers containing the nitroamine [2′-amino-4,4′-di(ethynylphenyl)-5′-nitro-1-benzenethiolate] or the nitro compound [4,4′-di(ethynylphenyl)-2′-nitro-1-benzenethiolate] as the active components. Both of these compounds have active redox centers. Current–voltage measurements of the devices exhibited negative differential resistance at room temperature and an on–off peak-to-valley ratio in excess of 1000:1 at low temperature. © 2000 American Institute of Physics.
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85.65.+h Molecular electronic devices
73.61.Ph Polymers; organic compounds
73.50.Fq High-field and nonlinear effects
82.45.-h Electrochemistry and electrophoresis

Bias-assisted photoelectrochemical etching of p-GaN at 300 K

J. E. Borton, C. Cai, M. I. Nathan, P. Chow, J. M. Van Hove, A. Wowchak, and H. Morkoc

Appl. Phys. Lett. 77, 1227 (2000); http://dx.doi.org/10.1063/1.1289807 (3 pages) | Cited 11 times

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Photoelectrochemical (PEC) etching of p-type GaN has been realized in room temperature, 0.1 M KOH solutions. PEC etching of GaN was achieved by applying a positive bias to the surface of the p-GaN layer through a deposited titanium mask. The applied bias reduces the field at the semiconductor surface, which induced the dissolution of the GaN. The effect of bias on etch rate and morphology was examined. It was found that insulating the Ti mask from the KOH solution with Si3N4 significantly increases the etch rate. The rms roughness of the etched region decreased as the bias voltage increased. Etch rates as high as 4.4 nm/min were recorded for films etched at 2 V. © 2000 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
82.45.-h Electrochemistry and electrophoresis
82.50.-m Photochemistry
82.20.Pm Rate constants, reaction cross sections, and activation energies
85.40.Hp Lithography, masks and pattern transfer
68.35.B- Structure of clean surfaces (and surface reconstruction)

Automatic feature selection for unsupervised image segmentation

W. Al-Nuaimy, Y. Huang, A. Eriksen, and V. T. Nguyen

Appl. Phys. Lett. 77, 1230 (2000); http://dx.doi.org/10.1063/1.1289267 (3 pages)

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A computational bottleneck is often imposed by the volume of image data generated in disciplines such as remote sensing and medical imaging, especially in situations where automatic analysis or interpretation is required. Segmentation and classification tasks that utilize multivariate data can be impeded by this dimensionality. A general-purpose unsupervised image segmentation system is presented here for the automatic detection of image regions exhibiting different visual texture properties. A suboptimal feature selection procedure is proposed to automatically select the set of texture features best suited for the particular application. Results are presented for the segmentation of ground-penetrating radar images for generating automatic subsurface reports. The reduction in the size of the feature set both reduces the computation time and improves the accuracy. © 2000 American Institute of Physics.
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84.40.Ua Telecommunications: signal transmission and processing; communication satellites
84.40.Xb Telemetry: remote control, remote sensing; radar
42.30.Sy Pattern recognition
42.30.Va Image forming and processing
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