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21 Aug 2000

Volume 77, Issue 8, pp. 1071-1232

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Scanning near-field optical microscopy in the near-infrared region using light emitting cantilever probes

S. Heisig, O. Rudow, and E. Oesterschulze

Appl. Phys. Lett. 77, 1071 (2000); http://dx.doi.org/10.1063/1.1289261 (3 pages) | Cited 14 times

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We present an application of an active emitting cantilever probe for scanning near-field optical microscopy and scanning force microscopy. A vertical cavity surface emitting laser (VCSEL) integrated in a galliumarsenide (GaAs) cantilever serves as a light source at 980 nm emission wavelength that is below the band gap energy of the GaAs substrate material. The VCSEL of 8 μm diameter is centered with respect to the metalized GaAs tip and illuminates a small near-field aperture at its apex. Aperture fabrication is accomplished by a proper thermal metal evaporation process. Optical measurements on a Fischer projection pattern revealed an edge resolution of about 80 nm. © 2000 American Institute of Physics.
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07.79.Fc Near-field scanning optical microscopes
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.37.Ps Atomic force microscopy (AFM)
68.37.Rt Magnetic force microscopy (MFM)
68.37.Uv Near-field scanning microscopy and spectroscopy
07.79.Lh Atomic force microscopes
81.05.Ea III-V semiconductors
78.66.Fd III-V semiconductors
42.62.-b Laser applications

Gray-track damage in potassium titanyl phosphate under a picosecond regime at 532 nm

Lionel Carrion and Jean-Pierre Girardeau-Montaut

Appl. Phys. Lett. 77, 1074 (2000); http://dx.doi.org/10.1063/1.1289501 (3 pages) | Cited 3 times

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We report studies of gray-track damage formation in flux-grown potassium titanyl phosphate exposed to 532 nm, picosecond pulses. We investigate the time evolution of damage formation and the evolution of gray-track susceptibility as a function of laser intensity. We demonstrate that the energy loss in the crystal is for the most part due to the formation of the centers of absorption. For 26 ps pulses, the intensity damage threshold was found to be much higher than for nanosecond pulses. Evidence is found that the mechanism of gray-track formation is nonlinear as a function of intensity and as a function of pulse duration. © 2000 American Institute of Physics.
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78.47.-p Spectroscopy of solid state dynamics
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.An Optical susceptibility, hyperpolarizability
42.70.Mp Nonlinear optical crystals

Self-aligned coupled cavity GaAs/AlGaAs midinfrared quantum-cascade laser

L. Hvozdara, A. Lugstein, S. Gianordoli, W. Schrenk, G. Strasser, K. Unterrainer, E. Bertagnolli, and E. Gornik

Appl. Phys. Lett. 77, 1077 (2000); http://dx.doi.org/10.1063/1.1289499 (3 pages) | Cited 15 times

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A monolithic GaAs/AlGaAs quantum-cascade laser with self-aligned focused ion beam-cut coupled cavities, emitting in the range of λ = 9.4 μm is demonstrated. Separate pulsing of two optically coupled laser sections enables control of the lasing in single-mode and in multimode regimes. Side mode suppression ratios better than 25 dB are shown. Mode control over two single modes spaced by 3.6 cm−1 is presented. An optical output intensity modulation in a range of 20 dB is achieved. The laser exhibits a peak output power in the range of 180 mW at cryogenic temperatures. The observed mode spacing is in a good agreement with the calculation. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Narrowing of high power diode laser arrays using reflection feedback from an etalon

M. V. Romalis

Appl. Phys. Lett. 77, 1080 (2000); http://dx.doi.org/10.1063/1.1289652 (2 pages) | Cited 13 times

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The spectrum of a high power multielement laser array is narrowed using reflection feedback from an 100 μm etalon placed in front of the laser. The full width at half maximum (FWHM) of the laser array is reduced by a factor of 2 with only 6% power loss. This reduction in FWHM is useful for optical pumping of alkali metals in the presence of high density buffer gas. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
32.80.Xx Level crossing and optical pumping
42.79.Bh Lenses, prisms and mirrors
07.60.Ly Interferometers

Subcycle high electron acceleration by crossed laser beams

Yousef I. Salamin and Christoph H. Keitel

Appl. Phys. Lett. 77, 1082 (2000); http://dx.doi.org/10.1063/1.1289649 (3 pages) | Cited 31 times

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We present an exact plane-wave-based analysis of the vacuum acceleration, to energy gradients in the TeV/m range, of a single electron, using two laser beams crossing at an arbitrary angle. Our analysis of the dynamics evolves from analytic solutions to the relativistic equations of motion and predicts that, for a given laser intensity, a unique crossing angle maximizes the energy gain due to constructive interference. © 2000 American Institute of Physics.
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41.75.Jv Laser-driven acceleration
29.20.-c Accelerators
42.62.-b Laser applications

Frequency domain spectroscopy of free-space terahertz radiation

Hironori Takahashi and Makoto Hosoda

Appl. Phys. Lett. 77, 1085 (2000); http://dx.doi.org/10.1063/1.1289805 (3 pages) | Cited 5 times

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We demonstrate frequency domain spectroscopy of free-space terahertz (THz) radiation by using a vibrating optical delay and a rf spectrum analyzer. When the timing of the pump pulses is repeatedly varied at several Hz and an optical chopper at a frequency of several kHz simultaneously modulates the pump pulse, the spectrum analyzer directly obtains the THz spectrum as a sideband of the chopping frequency. This method can be used to measure in real time the transient change in the THz spectrum at a specific frequency corresponding to the water absorption. © 2000 American Institute of Physics.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques

Electronic distribution in superlattice quantum cascade lasers

Mariano Troccoli, Gaetano Scamarcio, Vincenzo Spagnolo, Alessandro Tredicucci, Claire Gmachl, Federico Capasso, Deborah L. Sivco, Alfred Y. Cho, and Marinella Striccoli

Appl. Phys. Lett. 77, 1088 (2000); http://dx.doi.org/10.1063/1.1289798 (3 pages) | Cited 18 times

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The electron population in the excited miniband of quantum cascade structures with intrinsic superlattice active regions is extracted from the fine structure analysis of spontaneous interminiband electroluminescence spectra. At current densities typical of laser thresholds, the electrons injected into the excited miniband of a (GaInAs)6 nm/(AlInAs)1.8 nm superlattice are described by a nonequilibrium thermal distribution characterized by temperatures Te>200 K, much higher than the lattice temperature TL = 15 K. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.66.Fd III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.60.Fi Electroluminescence

2.12 μm InGaAs–InGaAlAs–InP diode lasers grown in solid-source molecular-beam epitaxy

G. K. Kuang, G. Böhm, M. Grau, G. Rösel, R. Meyer, and M.-C. Amann

Appl. Phys. Lett. 77, 1091 (2000); http://dx.doi.org/10.1063/1.1289799 (2 pages) | Cited 8 times

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We have fabricated InGaAs–InGaAlAs–InP strained quantum well lasers with wavelength as long as 2.12 μm in solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 780 A/cm2 at room temperature and a characteristic temperature of 48 K have been achieved. © 2000 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
81.05.Ea III-V semiconductors
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.86.+b Optical workshop techniques
42.60.Pk Continuous operation

Improved band alignment for hole injection by an interfacial layer in organic light emitting devices

L. Chkoda, C. Heske, M. Sokolowski, and E. Umbach

Appl. Phys. Lett. 77, 1093 (2000); http://dx.doi.org/10.1063/1.1289804 (3 pages) | Cited 23 times

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We demonstrate that a thin organic interfacial layer of 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) can be utilized to improve the band alignment of N,N′-di-(3-methylphenyl)N,N′diphenyl-4,4′diaminobiphenyl (TPD) films on [indium–tin–oxide (ITO)] (InSnO) substrates in, e.g., organic electroluminescent devices. A photoemission study of the highest occupied molecular orbital (HOMO) and vacuum level position as a function of the organic overlayer thickness reveals that due to chemisorptive bonding a thin PTCDA interlayer results in a reduced barrier between the Fermi level of ITO and the HOMO of TPD. Furthermore we detect a new molecular state 0.6 eV below the Fermi level at the PTCDA/ITO interface. Both effects are expected to improve the hole injection from the ITO anode into the TPD hole transport layer, e.g., in organic light emitting devices. © 2000 American Institute of Physics.
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85.60.Jb Light-emitting devices
73.20.At Surface states, band structure, electron density of states
79.60.Fr Polymers; organic compounds
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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