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5 Mar 2001

Volume 78, Issue 10, pp. 1319-1454

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Optical limiting properties of phthalocyanine-fullerene derivatives

Peiwang Zhu, Peng Wang, Wenfeng Qiu, Yunqi Liu, Cheng Ye, Guangyu Fang, and Yinglin Song

Appl. Phys. Lett. 78, 1319 (2001); http://dx.doi.org/10.1063/1.1352670 (3 pages) | Cited 21 times

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The solubility of fullerene (C60) is improved by combining it with an alkyl group of substituted copper (II) phthalocyanine (CuPc) through Diels–Alder reaction. Optical limiting properties of this compound were investigated by using a double frequency Nd:YAG laser system at a wavelength of 532 nm with pulse duration of 45 ps. The results show that there are two separated conjugation systems in this kind of molecule. Both of them independently contribute to the reverse saturable absorption. Broadband optical limiting materials might be designed based on the combination of various optical limiting molecules through covalent bonds. Phase separation problems existing in the mixture of various materials can be avoided. © 2001 American Institute of Physics.
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42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
81.05.ub Fullerenes and related materials
64.75.-g Phase equilibria

Analysis of a multiple-pump Raman amplifier

M. Achtenhagen, T. G. Chang, B. Nyman, and A. Hardy

Appl. Phys. Lett. 78, 1322 (2001); http://dx.doi.org/10.1063/1.1352665 (3 pages) | Cited 13 times

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Raman amplification is investigated both experimentally and numerically. It is demonstrated that, depending on the different pump wavelength combinations, the shape as well as the amount of the fiber gain can be altered accordingly. A numerical model is presented that includes the relevant physical effects to describe properly the different pump and signal interactions. Results of several pump combinations are compared to experimental data and used to derive numerical values for the local fiber gain. © 2001 American Institute of Physics.
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42.55.Ye Raman lasers
42.55.Wd Fiber lasers
42.60.By Design of specific laser systems
42.55.Ah General laser theory

Directional lasing oscillation of two-dimensional organic photonic crystal lasers at several photonic band gaps

M. Notomi, H. Suzuki, and T. Tamamura

Appl. Phys. Lett. 78, 1325 (2001); http://dx.doi.org/10.1063/1.1352671 (3 pages) | Cited 74 times

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We fabricated a series of two-dimensional (2D) hexagonal organic photonic-crystal lasers whose lattice constant varies from 0.18 to 0.44 μm, and observed clear lasing oscillation at the four lowest band gap frequencies (M1, K2, M2, and Γ1). We used in-plane beam propagation analysis to clarify the 2D feedback mechanism at each gap frequency, which differs for different gaps. The observed K1 lasing oscillation is due to coupling of three nonparallel diffracted waves, which has a purely 2D character. This shows that photonic crystal lasers can operate with various feedback essentially different from that of conventional 1D distributed feedback lasers. © 2001 American Institute of Physics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.50.-p Quantum optics
42.70.Qs Photonic bandgap materials
42.60.By Design of specific laser systems
42.70.Hj Laser materials
42.55.Rz Doped-insulator lasers and other solid state lasers

Strong coupling of exciton and photon modes in photonic crystal infiltrated with organic–inorganic layered perovskite

Kazuhiro Sumioka, Hiroyuki Nagahama, and Tetsuo Tsutsui

Appl. Phys. Lett. 78, 1328 (2001); http://dx.doi.org/10.1063/1.1352048 (3 pages) | Cited 13 times

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Large vacuum Rabi-splitting, the evidence of strong coupling of photon and exciton modes, was observed at room temperature in an ordered array of silica microspheres infiltrated with organic–inorganic layered perovskite. By natural sedimentation of a colloidal suspension of monodispersed silica microspheres with a diameter of 256 nm, three-dimensional ordered array of silica microspheres (silica opal) were prepared. Into an air space of the silica opal, organic–inorganic perovskite, bis-(phenethylammonium) tetraiodoplumbate (PAPI), which exhibits intense exciton absorption at 2.40 eV, was infiltrated. The silica opal infiltrated with PAPI (23% of air space was filled) exhibited a stop band at 2.13 eV, when observed at a normal direction to the sample surface. By changing the observation angle, the coupling of the stop band at around 2.1–2.4 eV and the exciton band at 2.40 eV due to PAPI was attained. From angle-tuning measurements of reflection spectra, a vacuum Rabi-splitting of 240 meV was evaluated. © 2001 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
71.35.-y Excitons and related phenomena

Planar p-on-n HgCdTe heterostructure infrared photodiodes

G. Bahir, V. Garber, and D. Rosenfeld

Appl. Phys. Lett. 78, 1331 (2001); http://dx.doi.org/10.1063/1.1353843 (3 pages) | Cited 6 times

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We report on a simple process to fabricate planar Hg1−yCdyTe/Hg1−xCdxTe (x<y) heterostructure photodiodes with p-on-n configuration. The material used for this demonstration was a double-layer p-on-n heterostructure that was grown by a liquid-phase-epitaxy technique. The p-on-n planar devices consisted of an arsenic-doped p-type epilayer (y = 0.28) on top of a long-wavelength infrared n-type epilayer (x=0.225, λ=10 μm). The ion-beam-milling p-to-n type conversion effect was used in order to delineate the active device element, and to isolate the planar device. Detailed analysis of the current–voltage characteristics of these diodes as a function of temperature show that they have high performance and that their dark current is diffusion limited down to 60 K. The results show that the R0A values are close to the theoretical limit over a wide range of cutoff wavelengths. © 2001 American Institute of Physics.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Active matrix of amorphous silicon multijunction color sensors for document imaging

F. Lemmi, M. Mulato, J. Ho, R. Lau, J. P. Lu, R. A. Street, and F. Palma

Appl. Phys. Lett. 78, 1334 (2001); http://dx.doi.org/10.1063/1.1350592 (3 pages) | Cited 9 times

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An integrated color image sensor, made entirely with amorphous silicon (a-Si:H) large-area technology, is presented. The a-Si:H based sensor is a double-junction p-i-n-i-p photodiode that discriminates two spectral bands according to the bias voltage. The active-matrix addressed array has 512×512 pixels with 75 μm pixel pitch and uses thin-film transistors as pixel switches. The array structure and the spectral response are discussed, and color images taken by the system using two bias voltages demonstrate the compatibility of color sensors with large-area active-matrix addressing techniques. © 2001 American Institute of Physics.
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42.79.Pw Imaging detectors and sensors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors

88 °C, continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers

S. Nakagawa, E. Hall, G. Almuneau, J. K. Kim, D. A. Buell, H. Kroemer, and L. A. Coldren

Appl. Phys. Lett. 78, 1337 (2001); http://dx.doi.org/10.1063/1.1352668 (3 pages) | Cited 27 times

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We demonstrate a lattice-matched 1.55 μm vertical-cavity surface-emitting laser operating continuous wave up to 88 °C. The laser employs AlAsSb-based mirrors, which provide high reflectivity and lattice matching to InP. The poor electrical and thermal conductivity of these mirrors is circumvented by utilizing an InP double-intracavity contacted structure. Benefits of the intracavity contacts are addressed by comparing the characteristics with the alternative contact scheme where current is injected through the Sb-based mirrors. Current and optical confinement is provided by an undercut aperture. The device shows a threshold current of 800 μA, a differential efficiency of 23%, and a maximum output power of over 1 mW at 20 °C. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Bh Lenses, prisms and mirrors
42.60.Pk Continuous operation
68.35.Ct Interface structure and roughness
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Multistage, monolithic ceramic microdischarge device having an active length of ∼0.27 mm

B. A. Vojak, S.-J. Park, C. J. Wagner, J. G. Eden, R. Koripella, J. Burdon, F. Zenhausern, and D. L. Wilcox

Appl. Phys. Lett. 78, 1340 (2001); http://dx.doi.org/10.1063/1.1352042 (3 pages) | Cited 18 times

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A three-stage, multilayer ceramic microdischarge device, having an active length of ∼267 μm and a cylindrical discharge channel 140–150 μm in diameter, has been developed and operated continuously in Ne gas. Stable glow discharges are produced for pressures above 1 atm, operating voltages as low as 137 V (at 800 Torr), and specific power loadings of ∼40 kW cm−3. The V–I characteristics for a fired ceramic structure exhibit a negative resistance, whereas the resistance is positive prior to firing. The manufacturability of the fabrication process as well as the “flow-through” and multistage design of this device make it well suited for the excitation of gas microlasers or the dissociation of toxic or environmentally hazardous gases and vapors. © 2001 American Institute of Physics.
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85.45.Bz Vacuum microelectronic device characterization, design, and modeling
52.80.Hc Glow; corona
52.75.-d Plasma devices
52.25.Fi Transport properties
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
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The enthalpy state of amorphous alloys in an immiscible system

J. H. He, H. W. Sheng, and E. Ma

Appl. Phys. Lett. 78, 1343 (2001); http://dx.doi.org/10.1063/1.1352040 (3 pages) | Cited 13 times

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We performed calorimetric measurements of the enthalpy of formation of amorphous alloys created using vapor quenching in a highly immiscible system, Ag–Ni. The low-enthalpy states observed, as compared with extrapolated liquids and crystalline solid solutions, are in agreement with the findings from molecular dynamics (MD) simulations. The MD results support the proposition that the enthalpy reduction is associated with the ultra-fine-scale phase separation in the liquid/amorphous state. © 2001 American Institute of Physics.
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65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
64.75.-g Phase equilibria
82.60.Cx Enthalpies of combustion, reaction, and formation
61.43.Dq Amorphous semiconductors, metals, and alloys

On the modes and loss mechanisms of a high Q mechanical oscillator

Xiao Liu, S. F. Morse, J. F. Vignola, D. M. Photiadis, A. Sarkissian, M. H. Marcus, and B. H. Houston

Appl. Phys. Lett. 78, 1346 (2001); http://dx.doi.org/10.1063/1.1350599 (3 pages) | Cited 17 times

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We have performed laser-Doppler vibrometry measurements of the vibration of a double-paddle oscillator. Seven modes with principally out-of-plane motion have been identified. Their resonance frequencies and mode shapes are in excellent agreement with three-dimensional finite element simulations. We have found that the second antisymmetric torsional mode has exceptionally good vibration isolation of its mode shape. This explains its extremely small low temperature internal friction below 10 K (2×10−8). By correlating the internal friction of each mode with features of their mode shapes, a criterion has been established to develop high Q oscillators. © 2001 American Institute of Physics.
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46.80.+j Measurement methods and techniques in continuum mechanics of solids
07.10.Fq Vibration isolation
45.80.+r Control of mechanical systems
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
06.30.Gv Velocity, acceleration, and rotation
02.70.Dh Finite-element and Galerkin methods
46.40.Ff Resonance, damping, and dynamic stability

A growth method for creating arrays of atomically flat mesas on silicon

Doohan Lee, Jack M. Blakely, Todd W. Schroeder, and J. R. Engstrom

Appl. Phys. Lett. 78, 1349 (2001); http://dx.doi.org/10.1063/1.1352656 (3 pages) | Cited 1 time

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We describe a method for producing arrays of atomically flat mesa structures on Si(111) through the deposition of Si on a lithographically patterned substrate in the temperature range 750–850 °C. The Si source was a supersonic beam of Si2H6. With an appropriate choice of substrate temperature and deposition rate, the atomic steps initially present on each mesa surface move by a step flow process to the trenches, which define the mesa leaving the surface as one extensive exposed atomic plane or terrace. The rate of clearing is believed to be limited by the velocity of step bunches. When the terraces become sufficiently large, nucleation of stacks of monoatomic islands occurs. Comparison is made with a previously developed evaporation method for making step-free surfaces. © 2001 American Institute of Physics.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments
81.05.Cy Elemental semiconductors
68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.A- Nucleation and growth

Influence of intermolecular distance on optical property in polydiacetylene crystalline films

T. Kondo, A. Ishii, H. Manabe, and H. Munekata

Appl. Phys. Lett. 78, 1352 (2001); http://dx.doi.org/10.1063/1.1350966 (3 pages)

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Optical absorption spectrum of polydiacetylene (PDA) crystalline films shifts toward higher energies as irregularity in molecular ordering is increased. We view this behavior in terms of the reduced overlap of conjugated π-electron wave function among one-dimensional PDA molecular wires. This point is further discussed by using the Kronig–Penney model, in which the influence of irregularity in molecular ordering is assessed in terms of a change in the intermolecular distance which in turn shifts the fundamental absorption edge. © 2001 American Institute of Physics.
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78.66.Qn Polymers; organic compounds
61.41.+e Polymers, elastomers, and plastics
68.55.-a Thin film structure and morphology
78.40.Me Organic compounds and polymers

Self-orientation of short single-walled carbon nanotubes deposited on graphite

Hisao Yanagi, Eriko Sawada, Ayyakkannu Manivannan, and Larry A. Nagahara

Appl. Phys. Lett. 78, 1355 (2001); http://dx.doi.org/10.1063/1.1353841 (3 pages) | Cited 15 times

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In view of practical handling of single-walled carbon nanotubes (SWNTs), here we present cutting procedures and spontaneous ordering of SWNTs deposited on highly oriented pyrolytic graphite (HOPG). Purified SWNTs were cut by ultrasonication in H2SO4/HNO3 mixture and further in de-ionized water. Thus, prepared short SWNTs were resuspended in methanol and dropped on a freshly cleaved HOPG surface. Scanning tunneling microscopy under a vacuum revealed that the short tubes of 20–100 nm in length were aligned along the basal axis of the HOPG lattice. Tunneling spectroscopy obtained from the oriented tubes indicated a semiconducting behavior, which was characterized in relation to their helical structure. The observed orientation of SWNTs was attributed to their one-dimensional electronic nature along the tube axis with the HOPG lattice. © 2001 American Institute of Physics.
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61.46.-w Structure of nanoscale materials
81.07.De Nanotubes
73.22.-f Electronic structure of nanoscale materials and related systems

Oriented crystallization of GaSb on a patterned, amorphous Si substrate

S. S. Yi, P. D. Moran, X. Zhang, F. Cerrina, J. Carter, H. I. Smith, and T. F. Kuech

Appl. Phys. Lett. 78, 1358 (2001); http://dx.doi.org/10.1063/1.1352657 (3 pages) | Cited 9 times

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Oriented crystallization of GaSb on patterned, oxidized Si substrates was achieved by metalorganic chemical vapor deposition. The Si substrate was formed by patterning an array of inverted square pyramids having {111} sidewall facets, using lithography and anisotropic etching in KOH. The orientation and structure of GaSb crystals, at various stages of the growth, were examined by scanning electron microscopy and x-ray diffraction. X-ray diffraction pole figure analysis shows that {111} planes of GaSb are predominantly parallel to the {111} planes of the inverted pyramids. Extra (111) spots observed in the x-ray diffraction pole figure are interpreted in terms of multiple twinning of GaSb. © 2001 American Institute of Physics.
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68.55.-a Thin film structure and morphology
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.40.Hp Lithography, masks and pattern transfer
61.72.Mm Grain and twin boundaries
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Cf Surface cleaning, etching, patterning

Room-temperature epitaxial growth of CeO2(001) thin films on Si(001) substrates by electron beam evaporation

T. Ami, Y. Ishida, N. Nagasawa, A. Machida, and M. Suzuki

Appl. Phys. Lett. 78, 1361 (2001); http://dx.doi.org/10.1063/1.1351849 (3 pages) | Cited 25 times

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Epitaxial growth of CeO2(001) thin films on Si(001) substrates was achieved by electron beam evaporation. Reflection high-energy electron diffraction and cross-sectional high-resolution transmission electron microscopy established the formation of an epitaxial CeO2(001)/Si(001) structure with a cube-on-cube configuration. The epitaxial structure had to be formed at a temperature below 200 °C with a Si(001)-2×1, 1×2 reconstructed surface, and it could be formed even at room temperature. In order to improve the crystallinity, homoepitaxial growth conditions at a higher temperature with a high oxygen flow rate were also investigated. Homoepitaxy of ceria grown on a 5-nm-thick initial layer was demonstrated by θ/2θ-scan and ϕ-scan of x-ray diffraction. © 2001 American Institute of Physics.
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68.55.A- Nucleation and growth
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Molecular-beam epitaxy of (Al)GaAsN using ammonia as the nitrogen source

Koji Takahashi, Yoshitaka Tomomura, Hiroaki Ikeda, and Hidenori Kawanishi

Appl. Phys. Lett. 78, 1364 (2001); http://dx.doi.org/10.1063/1.1352043 (3 pages) | Cited 4 times

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Molecular-beam epitaxy of an (Al)GaAsN alloy was demonstrated using uncracked ammonia as the nitrogen source. It was found that the efficiency of nitrogen incorporation into the alloy layers was dramatically enhanced when aluminum flux was supplied during growth. The nitrogen composition of an Al0.07Ga0.93As1−yNy layer grown at 580 °C was approximately 100 times larger than that of a GaAs1−yNy layer grown at the same growth condition without the aluminum supply. The nitrogen incorporation into the AlxGa1−xAs1−yNy layers was found to be proportional to the aluminum composition x. The activation energy of nitrogen incorporation was measured to be 195 kJ/mol. © 2001 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Electron beam prepatterning for site control of self-assembled quantum dots

M. Borgstrom, J. Johansson, L. Samuelson, and W. Seifert

Appl. Phys. Lett. 78, 1367 (2001); http://dx.doi.org/10.1063/1.1351528 (3 pages) | Cited 15 times

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A site-control technique for individual InAs quantum dots (QDs), formed by self-assembling has been developed, using scanning-electron-microscope assisted nanodeposition and metalorganic vapor phase epitaxy. We find that the nanoscale deposits, created at the focal point of the electron beam on a semiconductor surface, act as “nanogrowth masks”. Growth of a thin epitaxial layer produces nanoholes extending down to the deposits. The carbon deposits can be removed by oxygen plasma etching. When a compressively strained layer is deposited on this surface, QDs are self-organized at the hole sites, while no dots are observed in the flat surface region. © 2001 American Institute of Physics.
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81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
81.16.Dn Self-assembly
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Bn Etching and cleaning
81.65.Cf Surface cleaning, etching, patterning

Roughening transition and solid-state diffusion in short-period InP/In0.53Ga0.47As superlattices

M. Gerling, A. Gustafsson, D. H. Rich, D. Ritter, and D. Gershoni

Appl. Phys. Lett. 78, 1370 (2001); http://dx.doi.org/10.1063/1.1353839 (3 pages) | Cited 1 time

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We have examined the structural properties of InP/In0.53Ga0.47As superlattices grown by metalorganic molecular beam epitaxy by varying the periodicity and the total thickness. We observed a roughening transition, which involves the formation of wavy interfaces, when the period and total thickness of the superlattice exceeded critical values. Interface roughening in the wake of the growth front reveals that solid state diffusion in subsurface layers can be induced by surface stresses associated with surface roughening. © 2001 American Institute of Physics.
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68.65.Cd Superlattices
68.35.Ct Interface structure and roughness
68.35.Fx Diffusion; interface formation
68.35.Gy Mechanical properties; surface strains

Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures

S. O. Kucheyev, J. S. Williams, J. Zou, C. Jagadish, and G. Li

Appl. Phys. Lett. 78, 1373 (2001); http://dx.doi.org/10.1063/1.1347010 (3 pages) | Cited 22 times

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Ion-produced lattice disorder—often an undesirable effect of ion implantation—can be reduced if implantation is carried out at an elevated temperature. We present here a study of the structural characteristics of wurtzite GaN bombarded with 197Au+ ions at 550 °C over a wide dose range. Results show that disorder buildup and amorphization are suppressed at elevated temperatures, as compared to implantation at room temperature and below. With increasing ion dose, the evolution of damage proceeds via the formation of point-defect complexes and some planar defects, which are parallel to the basal plane of the GaN film. However, high-dose ion bombardment of GaN at elevated temperatures is complicated by anomalous surface erosion. Such an erosion is attributed to a three-step process of (i) the accumulation of implantation disorder with increasing ion dose, (ii) thermally and ion-beam-induced decomposition of a heavily damaged near-surface layer, and (iii) ion-beam-stimulated erosion of such a highly N-deficient layer. © 2001 American Institute of Physics.
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61.80.Jh Ion radiation effects
81.05.Ea III-V semiconductors
61.72.uj III-V and II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters

Sb enhancement of lateral superlattice formation in GaInP

C. M. Fetzer, R. T. Lee, S. W. Jun, G. B. Stringfellow, S. M. Lee, and T. Y. Seong

Appl. Phys. Lett. 78, 1376 (2001); http://dx.doi.org/10.1063/1.1350424 (3 pages) | Cited 13 times

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Epitaxial layers of GaInP were grown by organometallic vapor phase epitaxy with small amounts of TESb added to control the surface bonding. Above a concentration of Sb/III(v)=0.016, 12 K photoluminescence measurements show that the band gap is reduced, as compared to completely disordered GaInP, by Sb addition and that polarization along the [110] direction is as much as 41 times larger than along [110]. Transmission electron microscopy results show a lamellar domain structure in the [110]-zone axis dark-field images with a period of 120 nm. Atomic force microscopy shows surface undulations with the same period along the [110] direction. The results demonstrate an increase in the magnitude of the presence of lateral composition modulation with increasing Sb concentration. © 2001 American Institute of Physics.
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81.05.Ea III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
68.65.Cd Superlattices

Infrared extinction coefficient of LiNbO3 at temperatures to 1150 °C: Semiconductor behavior of a metal oxide at high temperature

C. Marín, A. G. Ostrogorsky, G. Foulon, D. Jundt, and S. Motakef

Appl. Phys. Lett. 78, 1379 (2001); http://dx.doi.org/10.1063/1.1352695 (3 pages) | Cited 1 time

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The temperature dependence (up to 1150 °C) of transmittance of LiNbO3 in the 1.2–25-μm-wavelength range was measured and the extinction coefficient calculated. The transmittance of LiNbO3 in the 1.2–3.8-μm-transparent region decreases with increasing temperature. This reduction is explained through a semiconductor model, and related to the temperature dependence of intrinsic carriers in the conduction band. A simple equation is provided for the extinction coefficient dependence on temperature and wavelength. © 2001 American Institute of Physics.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Hv Other nonmetallic inorganics
71.20.Nr Semiconductor compounds

Wavelength control from 1.25 to 1.4 μm in InxGa1−xAs quantum dot structures grown by metal organic chemical vapor deposition

A. Passaseo, G. Maruccio, M. De Vittorio, R. Rinaldi, R. Cingolani, and M. Lomascolo

Appl. Phys. Lett. 78, 1382 (2001); http://dx.doi.org/10.1063/1.1352698 (3 pages) | Cited 28 times

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This letter reports on the realization of long-wavelength InGaAs quantum dots (QDs) fabricated by metal organic chemical vapor deposition. By controlling the In incorporation in the QD layers and/or in the barrier embedding the QDs, we are able to tune the wavelength emission continuously from 1.25 to 1.4 μm at room temperature. Efficient stacking of dots emitting at 1.3 μm is also demonstrated. © 2001 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Synthesis of superhard cubic BC2N

Vladimir L. Solozhenko, Denis Andrault, Guillaume Fiquet, Mohamed Mezouar, and David C. Rubie

Appl. Phys. Lett. 78, 1385 (2001); http://dx.doi.org/10.1063/1.1337623 (3 pages) | Cited 22 times

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Cubic BC2N was synthesized from graphite-like BC2N at pressures above 18 GPa and temperatures higher than 2200 K. The lattice parameter of c-BC2N at ambient conditions is 3.642(2) Å, which is larger by 1.48% than would be expected based on ideal mixing between diamond and cubic boron nitride. The bulk modulus of c-BC2N is 282 GPa which is one of the highest bulk moduli known for any solid, and is exceeded only by the bulk moduli of diamond and c-BN. The hardness of c-BC2N is higher than that of c-BN single crystals which indicates that the synthesized phase is only slightly less hard than diamond. © 2001 American Institute of Physics.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
62.20.Qp Friction, tribology, and hardness
81.20.-n Methods of materials synthesis and materials processing
62.20.D- Elasticity
81.40.Jj Elasticity and anelasticity, stress-strain relations
68.35.Gy Mechanical properties; surface strains
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
61.66.Fn Inorganic compounds
62.50.-p High-pressure effects in solids and liquids
81.40.Vw Pressure treatment

Controlled photoluminescence in amorphous-silicon-nitride microcavities

Ali Serpengüzel and Selim Tanriseven

Appl. Phys. Lett. 78, 1388 (2001); http://dx.doi.org/10.1063/1.1347022 (3 pages) | Cited 14 times

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Narrow-band and enhanced photoluminescence have been observed in hydrogenated amorphous-silicon-nitride microcavities. The distributed Bragg reflectors were fabricated using alternating layers of hydrogenated amorphous-silicon nitride and hydrogenated amorphous-silicon oxide. The microcavity resonance wavelength was designed to be at the maximum of the bulk hydrogenated amorphous-silicon-nitride luminescence spectrum. At the microcavity resonance, the photoluminescence amplitude is enhanced, while the photoluminescence linewidth is reduced with respect to the bulk hydrogenated amorphous-silicon nitride. © 2001 American Institute of Physics.
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78.55.Hx Other solid inorganic materials
42.79.-e Optical elements, devices, and systems
78.66.Nk Insulators

Recombination mechanisms in GaInNAs/GaAs multiple quantum wells

A. Kaschner, T. Lüttgert, H. Born, A. Hoffmann, A. Yu. Egorov, and H. Riechert

Appl. Phys. Lett. 78, 1391 (2001); http://dx.doi.org/10.1063/1.1355014 (3 pages) | Cited 61 times

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Recombination processes in Ga1−xInxNyAs1−y/GaAs multiple quantum wells (MQWs) were investigated as function of the nitrogen molar fraction. We found a pronounced S-shaped behavior for the temperature-dependent shift of the photoluminescence emission similar to the ternary nitrides InGaN and AlGaN. This is explained by exciton localization at potential fluctuations. Time-resolved measurements at 4 K reveal an increase of the decay time with decreasing emission energy. A model based on lateral transfer processes to lower-energy states is proposed to explain this energy dependence. The formation of tail states in the Ga1−xInxNyAs1−y/GaAs MQWs is attributed to nitrogen fluctuations. © 2001 American Institute of Physics.
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73.21.Fg Quantum wells
78.67.De Quantum wells
78.55.Cr III-V semiconductors
71.35.Gg Exciton-mediated interactions
78.47.-p Spectroscopy of solid state dynamics
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