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12 Mar 2001

Volume 78, Issue 11, pp. 1463-1639

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Electron heating by photon-assisted tunneling in niobium terahertz mixers with integrated niobium titanium nitride striplines

B. Leone, J. R. Gao, T. M. Klapwijk, B. D. Jackson, W. M. Laauwen, and G. de Lange

Appl. Phys. Lett. 78, 1616 (2001); http://dx.doi.org/10.1063/1.1355003 (3 pages) | Cited 7 times

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We describe the gap voltage depression and current–voltage (IV) characteristics in pumped niobium superconductor–insulator–superconductor junction with niobium titanium nitride tuning stripline by introducing an electron heating power contribution resulting from the photon-assisted tunneling process. Theoretical fits using the extended Tien–Gordon theory are obtained that reproduce the most salient features of the pumped IV characteristics. © 2001 American Institute of Physics.
Show PACS
85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
84.30.Qi Modulators and demodulators; discriminators, comparators, mixers, limiters, and compressors
84.40.Az Waveguides, transmission lines, striplines
74.50.+r Tunneling phenomena; Josephson effects
85.25.Cp Josephson devices

Light degradation and voltage drift in polymer light-emitting diodes

G. C. M. Silvestre, M. T. Johnson, A. Giraldo, and J. M. Shannon

Appl. Phys. Lett. 78, 1619 (2001); http://dx.doi.org/10.1063/1.1355013 (3 pages) | Cited 18 times

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It is shown that the voltage drift and light degradation in polymer light-emitting diodes are related and can be explained by the formation of traps and the modification of the space charge in the bulk of the polymer. The energy released by nonradiative carrier recombination is believed to be the driving force for the generation of traps in poly(p-phenylene vinylene) conjugated polymers. A first-approximation model is derived for the voltage drift and the light decrease during operation, which is in good agreement with experimental observations for time and current density dependencies. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
42.70.Jk Polymers and organics
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence

High-efficiency red electrophosphorescence devices

Chihaya Adachi, Marc A. Baldo, Stephen R. Forrest, Sergey Lamansky, Mark E. Thompson, and Raymond C. Kwong

Appl. Phys. Lett. 78, 1622 (2001); http://dx.doi.org/10.1063/1.1355007 (3 pages) | Cited 303 times

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We demonstrate high-efficiency red electrophosphorescent organic light-emitting devices employing bis(2-(2′-benzo[4,5-a]thienyl)pyridinato-N,C3′) iridium(acetylacetonate) [Btp2Ir(acac)] as a red phosphor. A maximum external quantum efficiency of ηext = (7.0±0.5)% and power efficiency of ηp = (4.6±0.5) lm/W are achieved at a current density of J = 0.01 mA/cm2. At a higher current density of J = 100 mA/cm2, ηext = (2.5±0.3)% and ηp = (0.56±0.05) lm/W are obtained. The electroluminescent spectrum has a maximum at a wavelength of λmax = 616 nm with additional intensity peaks at λsub = 670 and 745 nm. The Commission Internationale de L’Eclairage coordinates of (x = 0.68, y = 0.32) are close to meeting video display standards. The short phosphorescence lifetime (∼4 μs) of Btp2Ir(acac) leads to a significant improvement in ηext at high currents as compared to the previously reported red phosphor, 2,3,7,8,12,13,17,18-octaethyl-12H, 23H-prophine platinum (II) PtOEP with a lifetime of ∼50 μs. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
85.60.Pg Display systems
42.70.Jk Polymers and organics

Experimental demonstration of a latch in clocked quantum-dot cellular automata

Alexei O. Orlov, Ravi K. Kummamuru, Rajagopal Ramasubramaniam, Geza Toth, Craig S. Lent, Gary H. Bernstein, and Gregory L. Snider

Appl. Phys. Lett. 78, 1625 (2001); http://dx.doi.org/10.1063/1.1355008 (3 pages) | Cited 20 times

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We present an experimental demonstration of a latch in a clocked quantum-dot cellular automata (QCA) device. The device consists of three floating micron-size metal dots, connected in series by multiple tunnel junctions and controlled by capacitively coupled gates. The middle dot acts as an adjustable barrier to control single-electron tunneling between end dots. The position of a switching electron in the half cell is detected by a single-electron electrometer. We demonstrate “latching” of a single electron in the end dots controlled by the gate connected to the middle dot. This ability to lock an electron in a controllable way enables pipelining, power gain and reduced power dissipation in QCA arrays. © 2001 American Institute of Physics.
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85.25.Qc Superconducting surface acoustic wave devices and other superconducting devices
03.67.Lx Quantum computation architectures and implementations
84.30.Sk Pulse and digital circuits
74.50.+r Tunneling phenomena; Josephson effects
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