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12 Mar 2001

Volume 78, Issue 11, pp. 1463-1639

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Crystalline zirconia oxide on silicon as alternative gate dielectrics

S. J. Wang, C. K. Ong, S. Y. Xu, P. Chen, W. C. Tjiu, J. W. Chai, A. C. H. Huan, W. J. Yoo, J. S. Lim, W. Feng, and W. K. Choi

Appl. Phys. Lett. 78, 1604 (2001); http://dx.doi.org/10.1063/1.1354161 (3 pages) | Cited 42 times

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Epitaxial crystalline yittria-stabilized zirconia (YSZ) oxide films were grown on silicon wafers by the laser molecular beam epitaxy technique. The interface of crystalline YSZ film in contact with silicon was found to be atomically sharp and commensurately crystallized without an amorphous layer. An x-ray photoelectron spectroscopy depth profile and transmission electron microscopy investigation showed that no SiO2 formed at the interface. For a film with electrical equivalent oxide thickness (teox) 14.6 Å, the leakage current is about 1.1×10−3 A/cm2 at 1 V bias voltage. The hysteresis and interface state density in this film are measured to be less than 10 mV and 2.0×1011 eV−1 cm−2, respectively. © 2001 American Institute of Physics.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Ct Interface structure and roughness
73.20.At Surface states, band structure, electron density of states
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)

M. Copel, E. Cartier, and F. M. Ross

Appl. Phys. Lett. 78, 1607 (2001); http://dx.doi.org/10.1063/1.1355002 (3 pages) | Cited 109 times

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We have characterized the structure and electrical properties of lanthanum silicate layers formed on Si(001) by reaction of lanthanum oxide with the substrate. Postoxidation of the deposited films results in the formation of a stacked dielectric with a lanthanum silicate layer atop an interfacial layer of SiO2. This structure combines the interfacial properties of SiO2 with the large permittivity of lanthanum silicate. Although the resulting film has leakage properties far superior to an equivalent thickness of SiO2, there is evidence of significant quantities of ionic charge that must be eliminated before use in electronic applications. © 2001 American Institute of Physics.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.35.Fx Diffusion; interface formation
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.Mq Oxidation
79.60.Jv Interfaces; heterostructures; nanostructures
68.37.Xy Scanning Auger microscopy, photoelectron microscopy
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
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