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19 Mar 2001

Volume 78, Issue 12, pp. 1649-1795

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Electrostatic control of microstructure thermal conductivity

Ryan N. Supino and Joseph J. Talghader

Appl. Phys. Lett. 78, 1778 (2001); http://dx.doi.org/10.1063/1.1355302 (3 pages) | Cited 4 times

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A technology for controlling the thermal conductivity of etch-released microstructures is proposed and demonstrated by placing test structures in and out of contact with their underlying substrate. By adjusting the duty cycle of a periodic actuation, the thermal conductivity can be adjusted linearly across a wide range. Experimental work with microfilaments in air has shown a continuous tuning range from approximately 1.7×10−4 W/K to 3.3×10−4 W/K. These numbers are limited by thermal conduction through air and thermal contact conductance, respectively. The fundamental tuning range is orders of magnitude wider, limited by radiation heat transfer and the thermal contact conductance of coated structures. © 2001 American Institute of Physics.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems
07.07.Tw Servo and control equipment; robots
07.20.-n Thermal instruments and apparatus

Structured doping with light forces

Th. Schulze, T. Müther, D. Jürgens, B. Brezger, M. K. Oberthaler, T. Pfau, and J. Mlynek

Appl. Phys. Lett. 78, 1781 (2001); http://dx.doi.org/10.1063/1.1355664 (3 pages) | Cited 23 times

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Light forces are a powerful tool for neutral atom manipulation and have been used previously to focus an atomic beam onto a substrate to create periodic nanostructures. We utilize the material-selective characteristic of the atom–light interaction to structure the material composition of a film during growth. A host and a dopant material are evaporated simultaneously, but only the dopant is focused by the light field. The dopant concentration varies laterally on a sub-100-nm-length scale. This technique can be extended to three-dimensional patterning and opens up ways to engineer the photonic, electronic, or magnetic features of a solid. © 2001 American Institute of Physics.
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37.10.Vz Mechanical effects of light on atoms, molecules, and ions
81.16.Ta Atom manipulation
81.16.Mk Laser-assisted deposition
81.07.Bc Nanocrystalline materials
42.62.-b Laser applications
81.15.Fg Pulsed laser ablation deposition
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.A- Nucleation and growth
68.55.Nq Composition and phase identification
61.72.up Other materials

Probing radicals in hot wire decomposition of silane using single photon ionization

H. L. Duan, G. A. Zaharias, and Stacey F. Bent

Appl. Phys. Lett. 78, 1784 (2001); http://dx.doi.org/10.1063/1.1355994 (3 pages) | Cited 14 times

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Radicals produced by the hot wire-induced decomposition of silane have been identified using vacuum ultraviolet single photon ionization (SPI). This laser-based technique uses 118 nm photons (10.5 eV) to ionize gas phase species; the resulting photoions are detected using time-of-flight mass spectrometry. The major silicon-containing gas-phase species identified by SPI during hot-wire activation of silane gas are Si, SiH3, and Si2H6. These results demonstrate that single photon ionization can be a powerful probe for in situ, real-time detection of multiple species in hot wire chemical vapor deposition. © 2001 American Institute of Physics.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.33.Ya Chemistry of MOCVD and other vapor deposition methods
82.50.Hp Processes caused by visible and UV light
82.80.Rt Time of flight mass spectrometry

Parallel atomic force microscopy with optical interferometric detection

T. Sulchek, R. J. Grow, G. G. Yaralioglu, S. C. Minne, C. F. Quate, S. R. Manalis, A. Kiraz, A. Aydine, and A. Atalar

Appl. Phys. Lett. 78, 1787 (2001); http://dx.doi.org/10.1063/1.1352697 (3 pages) | Cited 23 times

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We have developed an atomic force microscope that uses interferometry for parallel readout of a cantilever array. Each cantilever contains a phase sensitive diffraction grating consisting of a reference and movable set of interdigitated fingers. As a force is applied to the tip, the movable set is displaced and the intensity of the diffracted orders is altered. The order intensity from each cantilever is measured with a custom array of silicon photodiodes with integrated complementary metal–oxide–semiconductor amplifiers. We present images from five cantilevers acquired in the constant height mode that reveal surface features 2 nm in height. The interdigital method for cantilever array readout is scalable, provides angstrom resolution, and is potentially simpler to implement than other methods. © 2001 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.37.Ps Atomic force microscopy (AFM)
07.60.Ly Interferometers
42.79.Dj Gratings
68.35.B- Structure of clean surfaces (and surface reconstruction)
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