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19 Mar 2001

Volume 78, Issue 12, pp. 1649-1795

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Rigorous optical modeling of multilayer organic light-emitting diode devices

K. B. Kahen

Appl. Phys. Lett. 78, 1649 (2001); http://dx.doi.org/10.1063/1.1356453 (3 pages) | Cited 24 times

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We present an exact classical solution to the problem of dipole emission in a planar multilayer light-emitting device. The inputs to the model are the photoluminescence and quantum yield of the emitter material, and the device layer thicknesses and indices of refraction. The results of the model are applied to predicting the radiant intensity of organic light-emitting diodes as a function of varying device layer thickness. It is shown that the predicted radiances are in excellent agreement with the data. We also present results for the Poynting power distribution from a randomly aligned dipole for positions both internal and external to the diodes. © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
85.60.Bt Optoelectronic device characterization, design, and modeling
78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
42.79.Wc Optical coatings
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Influence of electric field on the photoluminescence of a liquid crystalline monosubstituted polyacetylene

Yuan Ming Huang, Weikun Ge, Jacky W. Y. Lam, and Ben Zhong Tang

Appl. Phys. Lett. 78, 1652 (2001); http://dx.doi.org/10.1063/1.1357806 (3 pages) | Cited 12 times

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It has been shown recently that strong photoluminescence (PL) can occur in monosubstituted polyacetylenes (PAs). In this letter, we investigate the PL of tetrahydrofuran solutions of a highly luminescent liquid crystalline PA, poly(11-{[4′-heptoxy-4-biphenylyl)carbonyl]oxy}-1-undecyne) (PBU), under the influence of direct current electric fields. The applied electric fields can dramatically tune the PL structures of a moderately concentrated PBU solution (∼11.3 mM) at and above an electric field threshold of about 3×105 V/m. Combined with the director simulations, our results indicate that the electrically induced molecular reorientation and intermolecular interaction are responsible for the observed spectral changes. © 2001 American Institute of Physics.
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78.55.Kz Solid organic materials
61.30.Vx Polymer liquid crystals
78.20.Jq Electro-optical effects

Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy

S. V. Ivanov, V. A. Solov’ev, K. D. Moiseev, I. V. Sedova, Ya. V. Terent’ev, A. A. Toropov, B. Ya. Meltzer, M. P. Mikhailova, Yu. P. Yakovlev, and P. S. Kop’ev

Appl. Phys. Lett. 78, 1655 (2001); http://dx.doi.org/10.1063/1.1352696 (3 pages) | Cited 11 times

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A hybrid double heterostructure with large asymmetric band offsets, combining AlAsSb/InAs (as a III–V part) and CdMgSe/CdSe (as a II–VI part), has been proposed as a basic element of a midinfrared laser structure design. The p-i-n diode structure has been successfully grown by molecular beam epitaxy and has exhibited an intense long-wavelength electroluminescence at 3.12 μm (300 K). A less than 10 times reduction of electroluminescence intensity from 77 to 300 K indicates an efficient carrier confinement in the InAs active layer due to high potential barriers in conduction and valence bands, estimated as ΔEC = 1.28 eV and ΔEV ∼ 1.6 eV. The type of band lineups at a coherent InAs/Cd1−xMgxSe interface is discussed for 0 ⩽ x ⩽ 0.15. © 2001 American Institute of Physics.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.60.Fi Electroluminescence
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
85.60.Dw Photodiodes; phototransistors; photoresistors
73.20.At Surface states, band structure, electron density of states
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