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19 Mar 2001

Volume 78, Issue 12, pp. 1649-1795

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The effect of strain field seeding on the epitaxial growth of Ge islands on Si(001)

A. Dunbar, M. Halsall, P. Dawson, U. Bangert, M. Miura, and Y. Shiraki

Appl. Phys. Lett. 78, 1658 (2001); http://dx.doi.org/10.1063/1.1352660 (3 pages) | Cited 5 times

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The effect of strain, due to a buried, nominally 6 ML Ge quantum dot layer, upon the growth of subsequent Ge layers grown by gas source molecular beam epitaxy has been investigated. A series of samples were grown at 700 °C with a nominally 6 ML Ge layer followed by a 30 nm Si spacer and then a second, thinner Ge layer. In each sample, the thickness of the second Ge layer was varied (2, 3, and 4 ML). Atomic force microscopy shows that in the second Ge layer islands form at thicknesses below the established critical thickness for this material system. This is confirmed by transmission electron microscopy images which also show the quantum dots in the second layers are stacked above those in the first layer, the island growth in the thin Ge layer being seeded by the strain field from the buried Ge islands. Photoluminescence results show a luminescence feature attributed to the strain-controlled quantum dots in the thin Ge layer. This band has properties similar to the frequently observed Ge dot luminescence but is observed at higher energies, depending upon the nominal thickness of the second Ge layer. © 2001 American Institute of Physics.
Show PACS
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.05.Cy Elemental semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
68.60.Bs Mechanical and acoustical properties
78.55.Ap Elemental semiconductors
78.66.Db Elemental semiconductors and insulators
81.07.Ta Quantum dots
68.37.Ps Atomic force microscopy (AFM)
68.37.Lp Transmission electron microscopy (TEM)

Effect of oxidation on the thermoelectric properties of PbTe and PbS epitaxial films

E. I. Rogacheva, I. M. Krivulkin, O. N. Nashchekina, A. Yu. Sipatov, V. V. Volobuev, and M. S. Dresselhaus

Appl. Phys. Lett. 78, 1661 (2001); http://dx.doi.org/10.1063/1.1355995 (3 pages) | Cited 24 times

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We report on the thickness d dependences of the Seebeck coefficient, electrical conductivity, and Hall coefficient of PbTe and PbS epitaxial thin films (d = 5–200 nm), prepared by thermal evaporation in vacuum and deposition on (001) KCl substrates. The oxidation of the films in air at 300 K leads to a sign inversion of the carrier type from n to p in films with d ⩽ 125 and 110 nm for PbTe and PbS, respectively. The observed d dependences are interpreted in terms of compensating acceptor states created by oxygen on the film surface. © 2001 American Institute of Physics.
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73.50.Lw Thermoelectric effects
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Le Other inorganic semiconductors
81.65.Mq Oxidation
81.05.Hd Other semiconductors

Effect of annealing time and temperature on the formation of threading and projected range dislocations in 1 MeV boron implanted Si

K. S. Jones, Craig Jasper, and Allen Hoover

Appl. Phys. Lett. 78, 1664 (2001); http://dx.doi.org/10.1063/1.1355006 (3 pages) | Cited 3 times

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The effect of annealing temperature and time on the formation of threading dislocations was investigated for high energy boron implants into silicon. 1 MeV B+ was implanted at a dose of 1×1014/cm2 into 〈100〉 Si wafers. The wafers were subsequently annealed in either a rapid thermal annealing (RTA) furnace or a conventional furnace for times between 1 s and 1 h at temperatures between 700 and 1150 °C. Following this anneal the wafers were put through a standard complementary metal-oxide-semiconductor (CMOS) process. After processing, the threading dislocation density and projected range dislocation density were studied using etch pit density counts and transmission electron microscopy (TEM). The results show that annealing (either RTA or furnace) at temperatures above 1000 °C prior to CMOS processing reduced the high density of threading dislocations by 1–2 orders of magnitude. Quantitative plan-view TEM studies show that the mechanism for defect reduction is different for the RTA versus furnace annealing and may be ramp rate dependent. © 2001 American Institute of Physics.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
61.72.Cc Kinetics of defect formation and annealing
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.uf Ge and Si
81.05.Cy Elemental semiconductors

Electron and trap dynamics in As-ion-implanted and annealed GaAs

L. Giniunas, R. Danielius, H. H. Tan, C. Jagadish, R. Adomavičius, and A. Krotkus

Appl. Phys. Lett. 78, 1667 (2001); http://dx.doi.org/10.1063/1.1356727 (3 pages) | Cited 5 times

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The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump–probe measurements. Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency. © 2001 American Institute of Physics.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Eq III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
61.72.Cc Kinetics of defect formation and annealing
72.30.+q High-frequency effects; plasma effects

Luminescence from Si nanocrystals in silica deposited by helicon activated reactive evaporation

S. Cheylan, R. G. Elliman, K. Gaff, and A. Durandet

Appl. Phys. Lett. 78, 1670 (2001); http://dx.doi.org/10.1063/1.1354668 (3 pages) | Cited 12 times

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An alternative method is investigated for the preparation of Si-rich SiO2 films used for the fabrication of light-emitting Si nanocrystal structures. The technique, helicon-activated reactive evaporation (HARE), combines e-beam evaporation of silicon with plasma activation of a reactive argon–oxygen atmosphere, and has the advantage of being able to produce thick, H-free films suitable for planar photonic device applications. The nanocrystal-rich films were formed by annealing as-deposited films at 1100 °C for 1 h. Room temperature photoluminescence was then measured and compared with that from ion-implanted samples annealed under similar conditions. The HARE-deposited films exhibited strong visible luminescence for a range of excess Si concentrations, demonstrating their potential for the manufacture of such materials. The films also exhibited a concentration dependence comparable to that of ion-implanted samples: the luminescence intensity initially increased with excess Si concentration up to a maximum before decreasing with increasing concentration thereafter. The cause of the decrease at higher concentrations is briefly discussed. © 2001 American Institute of Physics.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.07.Bc Nanocrystalline materials
78.55.Ap Elemental semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
52.77.Dq Plasma-based ion implantation and deposition
61.72.Cc Kinetics of defect formation and annealing
78.66.Db Elemental semiconductors and insulators
68.55.-a Thin film structure and morphology
61.46.-w Structure of nanoscale materials
81.05.Cy Elemental semiconductors
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