APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

26 Mar 2001

Volume 78, Issue 13, pp. 1805-1950

Page 1 of 2 Pages Next Page | Jump to Page
back to top
RSS Feeds

Terahertz-sideband generation in a semiconductor optical amplifier

D. S. Citrin and S. Hughes

Appl. Phys. Lett. 78, 1805 (2001); http://dx.doi.org/10.1063/1.1356456 (3 pages) | Cited 4 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We show that in a semiconductor optical amplifier irradiated by a strong terahertz electromagnetic field, terahertz-sideband generation can be substantial. Applications for frequency-shifting devices for wavelength-division-multiplexed optical systems are discussed. © 2001 American Institute of Physics.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
84.40.-x Radiowave and microwave (including millimeter wave) technology

Electroluminescence at silicon band gap energy from mechanically pressed indium–tin–oxide/Si contact

Ching-Fuh Lin, Miin-Jang Chen, Shu-Wei Chang, Peng-Fei Chung, Eih-Zhe Liang, Ting-Wien Su, and C. W. Liu

Appl. Phys. Lett. 78, 1808 (2001); http://dx.doi.org/10.1063/1.1359138 (3 pages) | Cited 1 time

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Room temperature electroluminescence (EL) corresponding to Si band gap energy is observed from mechanically pressed indium–tin–oxide (ITO)/Si contact. The intensity of luminescence is pressure dependent and highly related to the current–voltage characteristics. Increasing pressure simultaneously reduces the rectification property and the luminescence. The physical reason for EL is attributed to the formation of an air gap between the ITO and the Si substrate. The role of the air gap is similar to the oxide layer in the metal–oxide–semiconductor structure. The influence of surface quality of the Si substrate on the luminescence spectrum is also studied, and found to be significant. © 2001 American Institute of Physics.
Show PACS
78.60.Fi Electroluminescence
78.66.Db Elemental semiconductors and insulators
73.40.Ei Rectification
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Molecular-beam-epitaxy-grown ZnMgS ultraviolet photodetectors

I. K. Sou, Marcus C. W. Wu, T. Sun, K. S. Wong, and G. K. L. Wong

Appl. Phys. Lett. 78, 1811 (2001); http://dx.doi.org/10.1063/1.1358364 (3 pages) | Cited 15 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Epitaxial growth of Zn1−xMgxS alloy thin films on GaP(100) substrates was carried out using the molecular-beam-epitaxy technique. In situ reflection high-energy electron diffraction studies show that the alloys can be grown with a stable zinc-blende structure up to x around 30%. For x>30%, a structural transition will occur at a critical thickness which is sensitively dependent on the x composition. A near-band-edge peak with a full width at half maximum of about 10 nm was observed in room-temperature photoluminescence measurements made on as-grown alloy thin films. Several Zn1−xMgxS-based Schottky barrier photodetectors were fabricated. Room-temperature photoresponse measurements were performed on these detectors and abrupt long-wavelength cutoffs covering 325, 305, 295, and 270 nm were achieved for devices with Mg composition of 16%, 44%, 57%, and 75%, respectively. The response curve of the Zn0.43Mg0.57S device offers a close match to the erythemal action spectrum that describes human skin sensitivity to UV radiation. © 2001 American Institute of Physics.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
81.05.Dz II-VI semiconductors
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.30.+y Surface double layers, Schottky barriers, and work functions

Ultrafast dynamic holography in nanocrystal solids

B. Kraabel, A. Malko, J. Hollingsworth, and V. I. Klimov

Appl. Phys. Lett. 78, 1814 (2001); http://dx.doi.org/10.1063/1.1358365 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report efficient dynamic gratings in close-packed solids of CdSe nanocrystals. These gratings are formed on the subpicosecond time scale and have diffraction efficiencies up to 0.5% for film thicknesses of ∼0.5 μm. Nanocrystal solids combine the best features of inorganic semiconductors (large resonant nonlinearities and high photostability) and organic semiconducting polymers (chemical flexibility and tunability of optical properties by simple synthetic means). Additionally, nanocrystal solids allow precise control over the spectral position of the nonlinear optical response by simply varying the size of the nanocrystals used in fabricating the solid (quantum confinement effect). © 2001 American Institute of Physics.
Show PACS
78.66.Hf II-VI semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
42.40.Eq Holographic optical elements; holographic gratings
61.46.-w Structure of nanoscale materials

Degenerate four-wave mixing and Z-scan measurements of stilbazolium derivatives

Wenfang Sun, Chris M. Lawson, Gary M. Gray, Chuanlang Zhan, and Duoyuan Wang

Appl. Phys. Lett. 78, 1817 (2001); http://dx.doi.org/10.1063/1.1355293 (3 pages) | Cited 10 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Stilbazolium derivatives are very attractive optical materials for photonics and biophotonics applications because a large number of these derivatives are available and they can exhibit large third-order nonlinear coefficients and rapid responses. To quantitatively characterize their third-order nonlinear coefficients and the temporal responses of their third-order nonlinear process, we have performed degenerate four-wave mixing and Z-scan experiments on four stilbazolium derivatives with different electron donors using 40 ps laser pulses at 532 nm. The γ values for three of the compounds are on the order of 10−31 esu. These high values arise from electronic processes and are associated with both nonlinear absorption and nonlinear refraction. The relative contributions from nonlinear absorption and nonlinear refraction are dependent on the chemical structure and linear absorption of the stilbazolium derivative. © 2001 American Institute of Physics.
Show PACS
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
42.70.Jk Polymers and organics
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.47.-p Spectroscopy of solid state dynamics
42.65.An Optical susceptibility, hyperpolarizability
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
78.40.Me Organic compounds and polymers
78.40.Dw Liquids

Luminescence spectra of a quantum-dot cascade laser

V. M. Apalkov and Tapash Chakraborty

Appl. Phys. Lett. 78, 1820 (2001); http://dx.doi.org/10.1063/1.1357808 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A quantum cascade laser in which the quantum wells in the active regions are replaced by quantum dots with their atom-like discrete energy levels is an interesting system with which to study novel features in optical spectroscopy. We study structures suitable for diagonal lasing transitions in coupled dots, and vertical transitions in a single dot. The luminescence spectra as a function of electron number and dot size show that for diagonal transitions a significant amount of blueshift in the emission spectra can be achieved by increasing the electron population in the quantum dots as well as by decreasing the size of the dots. © 2001 American Institute of Physics.
Show PACS
73.21.La Quantum dots
42.55.Px Semiconductor lasers; laser diodes
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
73.20.At Surface states, band structure, electron density of states
back to top
RSS Feeds

Generation of streams of highly charged Ag ions by picosecond laser

J. Badziak, J. Makowski, P. Parys, J. Wołowski, E. Woryna, and A. B. Vankov

Appl. Phys. Lett. 78, 1823 (2001); http://dx.doi.org/10.1063/1.1356448 (3 pages) | Cited 7 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The results of the investigation of ion emission from a Ag target irradiated with high-intensity (up to 5×1016 W/cm2) 1 ps laser pulse are presented. It is shown that using a picosecond subjoule laser a production of intense streams of highly charged (charge state z>20), high-energy (up to hundreds of kilo-electron-volts) Ag ions is possible. Some properties of the ion streams are discussed. © 2001 American Institute of Physics.
Show PACS
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.38.Kd Laser-plasma acceleration of electrons and ions
52.70.Nc Particle measurements
back to top
RSS Feeds

Dielectric transition of nanostructured diamond films

Haitao Ye, Chang Q. Sun, Haitao Huang, and Peter Hing

Appl. Phys. Lett. 78, 1826 (2001); http://dx.doi.org/10.1063/1.1342047 (3 pages) | Cited 21 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The dielectric behavior of nanostructured diamond films has been investigated by using an impedance analyzer up to 500 °C. Impedance data are presented in the form of the Cole–Cole plot. It is found that: (i) the resistivity contributed both from bulk grain interior and grain boundary decreases with increasing temperature; (ii) above 250 °C, the impurities at grain boundaries are thermally activated, and thus contribute to the dielectric relaxation; and (iii) the electrical conductivity of diamond films follows an Arrhenius law with an activation energy transition from 0.13 to 0.67 eV at 250 °C. Similar activation energy is found for the Arrhenius plot of relaxation frequencies from 0.14 to 0.73 eV. The dielectric transition is explained as the change of crystal field caused by the thermal expansion or by surface bond contraction of nanosized particles. © 2001 American Institute of Physics.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
73.63.Bd Nanocrystalline materials
72.60.+g Mixed conductivity and conductivity transitions
71.55.Cn Elemental semiconductors
73.61.Cw Elemental semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.22.Gm Dielectric loss and relaxation

Linewidths of excitonic luminescence transitions in AlGaN alloys

Giuliano Coli, K. K. Bajaj, J. Li, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 78, 1829 (2001); http://dx.doi.org/10.1063/1.1357212 (3 pages) | Cited 27 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this work, we present a study of the behavior of linewidths of excitonic photoluminescence transitions measured at 10 K in AlGaN alloys as a function of Al concentration. Samples we have investigated are grown by low-pressure metalorganic chemical vapor deposition on (0001) oriented sapphire substrates with low-temperature GaN buffer layers. The Al composition ranged from 0%–35%. We find that the values of the excitonic linewidth increase as a function of Al concentration and agree very well with those calculated using a model in which the broadening effect is assumed to be due to compositional disorder in semiconductor alloys. The values of the excitonic linewidths measured in our samples are considerably smaller than those reported recently, thus attesting to the high quality of our samples. © 2001 American Institute of Physics.
Show PACS
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Interfacial reactions between thin rare-earth-metal oxide films and Si substrates

Haruhiko Ono and Tooru Katsumata

Appl. Phys. Lett. 78, 1832 (2001); http://dx.doi.org/10.1063/1.1357445 (3 pages) | Cited 118 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Rare-earth-metal oxide films (Ln2O3; Ln=Y, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Er, Tm, and Yb) between 20 and 30 nm thick were grown on Si substrates by using a pyrolysis method. We found that a silicate (LnSiO) layer and a silicon oxide layer were formed at the interface between oxides and substrate after postannealing. The infrared absorption of the Si–O–Ln bonds increased as the postannealing temperature rose. The Si–O–Ln bond formation strongly depended on the ion radii of the rare-earth elements. We conclude that an interfacial silicate layer can easily be formed by a reaction with Si atoms diffusing from the substrate for oxides with larger ion radii. This is because such oxides may have a larger space between atoms. The quantity of Si–O–Si bonds also increased after postannealing. The increase in the Si–O–Si bonds for Ln2O3 was independent of the elements, and almost the same as the increases for Ta2O5 and ZrO2. © 2001 American Institute of Physics.
Show PACS
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Spontaneous ridge-structure formation and large field emission of heavily Si-doped AlN

Makoto Kasu and Naoki Kobayashi

Appl. Phys. Lett. 78, 1835 (2001); http://dx.doi.org/10.1063/1.1357449 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Sharp ridge structures with a 3 nm wide (0001) top facet and {1math01} sidewall facets formed on the surface of a heavily Si-doped AlN layer on a 6H-SiC (0001) substrate during metalorganicvapor-phase-epitaxy growth. This is caused by {1math01} facet growth induced by heavy Si doping. We obtained a large field emission (FE) current density of 11 mA/cm2 at 84 V/μm. One of the reasons for the large FE is that the ridge-structure formation decreases the energy barrier necessary for FE by about 2.4 eV. © 2001 American Institute of Physics.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.05.Ea III-V semiconductors
79.70.+q Field emission, ionization, evaporation, and desorption
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

In situ analysis of the room-temperature epitaxial growth of CeO2 ultrathin films on Si (111) by coaxial impact-collision ion scattering spectroscopy

M. Furusawa, J. Tashiro, A. Sasaki, K. Nakajima, M. Takakura, T. Chikyow, P. Ahmet, and M. Yoshimoto

Appl. Phys. Lett. 78, 1838 (2001); http://dx.doi.org/10.1063/1.1356451 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The room-temperature epitaxial growth of CeO2 films on Si(111) substrates was examined in situ by combined use of a coaxial impact-collision ion scattering spectroscopy (CAICISS) and the laser molecular beam epitaxy (laser MBE). It was found that the crystal quality of CeO2 ultrathin films (∼3 nm thick) as-grown in UHV ( ∼ 10−9 Torr) could be improved remarkably by a few minutes of O2 gas exposure ( ∼ 10−5 Torr) at room temperature. A three-fold symmetry in the Ce signal intensity of azimuth rotational CAICISS spectra, which exhibited the type-B epitaxial growth ([math10]CeO2‖[1math0]Si), was observed for the films thicker than about 1 nm. © 2001 American Institute of Physics.
Show PACS
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Fg Pulsed laser ablation deposition

Formation of a nanoquasicrystalline phase in Zr–Cu–Ti–Ni metallic glass

Dmitri V. Louzguine and Akihisa Inoue

Appl. Phys. Lett. 78, 1841 (2001); http://dx.doi.org/10.1063/1.1358362 (3 pages) | Cited 16 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Structure changes in Zr–Ti–Ni–Cu metallic glass on heating have been studied by x-ray diffraction, transmission electron microscopy, and differential scanning calorimetry. It has been found that the first stage of the devitrification process is related to the precipitation of fine particles of an icosahedral phase from about 3 to 7 nm in size. Direct evidence of the formation of the icosahedral phase has been obtained using nanobeam diffraction in transmission electron microscopy. © 2001 American Institute of Physics.
Show PACS
61.43.Fs Glasses
81.05.Kf Glasses (including metallic glasses)
61.44.Br Quasicrystals
64.70.K- Solid-solid transitions
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials

Modification of refractive index in Ag/Na ion-exchanged glasses by vacuum-ultraviolet pulse laser irradiation

S. Ruschin, K. Sugioka, G. Yarom, T. Akane, and K. Midorikawa

Appl. Phys. Lett. 78, 1844 (2001); http://dx.doi.org/10.1063/1.1357216 (3 pages) | Cited 2 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Laser-induced refractive index modification in Ag+ ion exchanged waveguides on glass substrates was observed. Waveguiding effects were measured, and an increase in refractive index of more than 2×10−3 was deduced. Refractive index profiles show that the maximum radiation-induced difference is attained 4–5 μm below the surface. Possible mechanisms for the material modification are discussed. © 2001 American Institute of Physics.
Show PACS
42.70.Ce Glasses, quartz
42.82.Et Waveguides, couplers, and arrays
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.40.Pg Disordered solids
42.79.Gn Optical waveguides and couplers
61.82.Ms Insulators

Soft x-ray-excited luminescence and optical x-ray absorption fine structures of tris (8-hydroxyquinoline) aluminum

S. J. Naftel, P. Zhang, P.-S. Kim, T. K. Sham, I. Coulthard, W. J. Antel, J. W. Freeland, S. P. Frigo, M.-K. Fung, S. T. Lee, Y. F. Hu, and B. W. Yates

Appl. Phys. Lett. 78, 1847 (2001); http://dx.doi.org/10.1063/1.1358360 (3 pages) | Cited 8 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Photoluminescence from tris (8-hydroxyquinoline) aluminum (Alq3) films has been observed using tunable soft x rays as an excitation source. The photons were tuned to energies above and below the K absorption edges of C, N, O, and Al. The luminescence was in turn used to monitor the absorption. It was found that the luminescence induced by soft x ray exhibits additional emission bands at shorter wavelengths compared to ultraviolet excitation. While all K edges exhibit optical x-ray absorption fine structures (XAFS) similar to those of total electron and fluorescence yield, the optical XAFS at the C K-edge resonance are enhanced for the C1s to π∗ transitions, indicating site specificity. These observations are attributed to the energetics of the process and the local electronic structure. © 2001 American Institute of Physics.
Show PACS
78.55.Kz Solid organic materials
78.70.Dm X-ray absorption spectra

Near-unity below-band-gap absorption by microstructured silicon

C. Wu, C. H. Crouch, L. Zhao, J. E. Carey, R. Younkin, J. A. Levinson, E. Mazur, R. M. Farrell, P. Gothoskar, and A. Karger

Appl. Phys. Lett. 78, 1850 (2001); http://dx.doi.org/10.1063/1.1358846 (3 pages) | Cited 115 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We increased the absorptance of light by silicon to approximately 90% from the near ultraviolet (0.25 μm) to the near infrared (2.5 μm) by surface microstructuring using laser-chemical etching. The remarkable absorptance most likely comes from a high density of impurities and structural defects in the silicon lattice, enhanced by surface texturing. Microstructured avalanche photodiodes show significant enhancement of below-band-gap photocurrent generation at 1.06 and 1.31 μm, indicating promise for use in infrared photodetectors. © 2001 American Institute of Physics.
Show PACS
78.66.Db Elemental semiconductors and insulators
81.65.Cf Surface cleaning, etching, patterning
85.60.Dw Photodiodes; phototransistors; photoresistors
42.62.Cf Industrial applications
78.30.Hv Other nonmetallic inorganics
78.40.Fy Semiconductors

Surfactant-assisted synthesis of semiconductor nanotubes and nanowires

C. N. R. Rao, A. Govindaraj, F. Leonard Deepak, N. A. Gunari, and Manashi Nath

Appl. Phys. Lett. 78, 1853 (2001); http://dx.doi.org/10.1063/1.1359145 (3 pages) | Cited 100 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Nanotubes and nanowires of CdSe and CdS have been obtained from solutions containing a surfactant such as Triton 100-X. They have been characterized by x-ray diffraction, electron microscopy, and optical spectroscopy. © 2001 American Institute of Physics.
Show PACS
81.07.De Nanotubes
81.16.Be Chemical synthesis methods
61.46.-w Structure of nanoscale materials
78.67.Ch Nanotubes
78.55.Et II-VI semiconductors

Evidence of a stable binary CdCa quasicrystalline phase

J. Z. Jiang, C. H. Jensen, A. R. Rasmussen, and L. Gerward

Appl. Phys. Lett. 78, 1856 (2001); http://dx.doi.org/10.1063/1.1359147 (2 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Quasicrystals with a primitive icosahedral structure and a quasilattice constant of 5.1215 Å have been synthesized in a binary Cd–Ca system. The thermal stability of the quasicrystal has been investigated by in situ high-temperature x-ray powder diffraction using synchrotron radiation. It is demonstrated that the binary CdCa quasicrystal is thermodynamic stable up to its melting temperature. The linear thermal expansion coefficient of the quasicrystal is 2.765×10−5 K−1. © 2001 American Institute of Physics.
Show PACS
61.44.Br Quasicrystals
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.

Photoluminescence of Ge quantum dots prepared on porous silicon by ultrahigh vacuum chemical vapor deposition

Jingyun Huang, Zhizhen Ye, Binghui Zhao, Xiangyang Ma, Yadong Wang, and Duanlin Que

Appl. Phys. Lett. 78, 1858 (2001); http://dx.doi.org/10.1063/1.1359144 (3 pages) | Cited 3 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter reports a way of preparing Ge quantum dots on anodized porous silicon layers by ultrahigh vacuum chemical vapor deposition at a low temperature of 720 °C. The porous silicon was formed by anodic conversion of p-type (100) oriented crystalline silicon in hydrofluoric acid diluted by alcohol. A clear phonon-resolved photoluminescence (PL), as a no-phonon (NP) and its transverse acoustic phonon replica, was observed from the Ge dots at the temperature of 10 K. The blueshift energy is as high as about 136 meV, but the full width at half maximum of the NP PL spectrum is only 1.23 meV. We attributed the very large blueshift in energy of the PL peak to quantum size confinement effect of the Ge quantum dots. © 2001 American Institute of Physics.
Show PACS
78.55.Ap Elemental semiconductors
78.67.Hc Quantum dots
81.07.Ta Quantum dots
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
63.20.D- Phonon states and bands, normal modes, and phonon dispersion

Piezoelectric contributions to pulsed degenerate four-wave mixing

Ivan Biaggio

Appl. Phys. Lett. 78, 1861 (2001); http://dx.doi.org/10.1063/1.1358850 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The existence of geometry and pulse-length-dependent piezoelectric contributions to pulsed degenerate four-wave mixing is demonstrated experimentally. These effects must be taken into account when measuring third-order susceptibilities in noncentrosymmetric materials. © 2001 American Institute of Physics.
Show PACS
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
42.65.An Optical susceptibility, hyperpolarizability
42.70.Mp Nonlinear optical crystals
78.20.Jq Electro-optical effects
77.65.-j Piezoelectricity and electromechanical effects

Formation of the TiSi2 C40 as an intermediate phase during the reaction of the Si/Ta/Ti system

F. La Via, F. Mammoliti, G. Corallo, M. G. Grimaldi, D. B. Migas, and Leo Miglio

Appl. Phys. Lett. 78, 1864 (2001); http://dx.doi.org/10.1063/1.1359142 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of a thin Ta layer at the Si/Ti interface on the intermediate phase formation has been studied in detail by in situ sheet resistance, x-ray diffraction, transmission electron microscopy and Rutherford backscattering spectroscopy of partially reacted samples. When a Ta layer is deposited at the Si/Ti interface, a new intermediate phase has been detected, i.e. the hexagonal TiSi2 C40. This phase grows on the C40–TaSi2 that is formed at the interface with silicon. The lattice parameters of the C40–TiSi2 obtained by ab initio calculations agree quite well with the experimental ones. © 2001 American Institute of Physics.
Show PACS
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Dv Composition, segregation; defects and impurities
73.40.Ns Metal-nonmetal contacts
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
68.37.Lp Transmission electron microscopy (TEM)
85.40.Ls Metallization, contacts, interconnects; device isolation
61.72.Cc Kinetics of defect formation and annealing
back to top
RSS Feeds

Reduction of the ZnSe/GaAs(100) valence band offset by a Te interlayer

Th. Gleim, C. Heske, E. Umbach, C. Schumacher, W. Faschinger, Ch. Ammon, M. Probst, and H.-P. Steinrück

Appl. Phys. Lett. 78, 1867 (2001); http://dx.doi.org/10.1063/1.1358366 (3 pages) | Cited 6 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
For the heterovalent system ZnSe/GaAs(100), we have investigated the influence of a Te pretreatment of the substrate on the electronic structure of the interface by photoelectron spectroscopy. We have paid special attention to correctly determine the valence band maximum in a k-resolved fashion, including the use of photon energies which enable excitation at the Γ point. We find that the Te pretreatment leads to a decrease of the valence band discontinuity as large as 0.3 eV. From photoemission depth profiling we conclude that some Te atoms remain localized at the interface, thus causing the change of the valence band offset while others float on the ZnSe surface, probably acting as surfactants. © 2001 American Institute of Physics.
Show PACS
73.20.At Surface states, band structure, electron density of states
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.60.Jv Interfaces; heterostructures; nanostructures

Magnetoluminescence of Zn(Mn)Se/Be(Mn)Te semimagnetic heterostructures with a type-II band alignment

D. R. Yakovlev, C. Sas, B. König, L. Hansen, W. Ossau, G. Landwehr, L. W. Molenkamp, and A. Waag

Appl. Phys. Lett. 78, 1870 (2001); http://dx.doi.org/10.1063/1.1357446 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Zn(Mn)Se/Be(Mn)Te semiconductor heterostructures with a type-II band alignment have been fabricated by molecular-beam epitaxy. Giant Zeeman splitting of the band states, caused by their interaction with the localized magnetic moments of Mn ions, has been observed for the spatially direct and indirect optical transitions. Strong p–d exchange interaction for the valence band states in (Be,Mn)Te has been demonstrated experimentally. © 2001 American Institute of Physics.
Show PACS
71.55.Gs II-VI semiconductors
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
73.61.Ga II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.20.Ls Magneto-optical effects
73.20.Fz Weak or Anderson localization

High mobility in n-type GaN substrates

A. Saxler, D. C. Look, S. Elhamri, J. Sizelove, W. C. Mitchel, C. M. Sung, S. S. Park, and K. Y. Lee

Appl. Phys. Lett. 78, 1873 (2001); http://dx.doi.org/10.1063/1.1348304 (3 pages) | Cited 11 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
High peak electron mobilities were observed in freestanding c-plane GaN layers. Two well-defined electrical layers, a low mobility degenerate interface layer, and a high mobility nondegenerate bulk layer, were present in these samples. The carrier concentrations and mobilities for the layers were extracted using two methods: (1) magnetic field dependent Hall effect analysis; and (2) a simple two layer Hall model with the assumption that one of the layers is degenerate. The electron Hall mobility of the bulk layer is found to peak at nearly 8000 cm2/V s at low temperature using the magnetic field dependent Hall effect analysis. © 2001 American Institute of Physics.
Show PACS
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Relaxation oscillation phenomena in cryogenic Si diodes

Bernhard P. Merz and Rudolf A. Treumann

Appl. Phys. Lett. 78, 1876 (2001); http://dx.doi.org/10.1063/1.1357447 (3 pages)

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present observations of unusual oscillatory behavior of Si diodes at low temperatures. The oscillations observed are stable, highly reproducible and obey a frequency-current relation that is linear over nearly eight decades in current strength allowing for precision measurement of currents over the whole range down to picoampere currents. © 2001 American Institute of Physics.
Show PACS
85.30.Kk Junction diodes
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close