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26 Mar 2001

Volume 78, Issue 13, pp. 1805-1950

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Reduction of the ZnSe/GaAs(100) valence band offset by a Te interlayer

Th. Gleim, C. Heske, E. Umbach, C. Schumacher, W. Faschinger, Ch. Ammon, M. Probst, and H.-P. Steinrück

Appl. Phys. Lett. 78, 1867 (2001); http://dx.doi.org/10.1063/1.1358366 (3 pages) | Cited 6 times

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For the heterovalent system ZnSe/GaAs(100), we have investigated the influence of a Te pretreatment of the substrate on the electronic structure of the interface by photoelectron spectroscopy. We have paid special attention to correctly determine the valence band maximum in a k-resolved fashion, including the use of photon energies which enable excitation at the Γ point. We find that the Te pretreatment leads to a decrease of the valence band discontinuity as large as 0.3 eV. From photoemission depth profiling we conclude that some Te atoms remain localized at the interface, thus causing the change of the valence band offset while others float on the ZnSe surface, probably acting as surfactants. © 2001 American Institute of Physics.
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73.20.At Surface states, band structure, electron density of states
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.60.Jv Interfaces; heterostructures; nanostructures

Magnetoluminescence of Zn(Mn)Se/Be(Mn)Te semimagnetic heterostructures with a type-II band alignment

D. R. Yakovlev, C. Sas, B. König, L. Hansen, W. Ossau, G. Landwehr, L. W. Molenkamp, and A. Waag

Appl. Phys. Lett. 78, 1870 (2001); http://dx.doi.org/10.1063/1.1357446 (3 pages) | Cited 11 times

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Zn(Mn)Se/Be(Mn)Te semiconductor heterostructures with a type-II band alignment have been fabricated by molecular-beam epitaxy. Giant Zeeman splitting of the band states, caused by their interaction with the localized magnetic moments of Mn ions, has been observed for the spatially direct and indirect optical transitions. Strong p–d exchange interaction for the valence band states in (Be,Mn)Te has been demonstrated experimentally. © 2001 American Institute of Physics.
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71.55.Gs II-VI semiconductors
78.55.Et II-VI semiconductors
78.66.Hf II-VI semiconductors
73.61.Ga II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.20.Ls Magneto-optical effects
73.20.Fz Weak or Anderson localization

High mobility in n-type GaN substrates

A. Saxler, D. C. Look, S. Elhamri, J. Sizelove, W. C. Mitchel, C. M. Sung, S. S. Park, and K. Y. Lee

Appl. Phys. Lett. 78, 1873 (2001); http://dx.doi.org/10.1063/1.1348304 (3 pages) | Cited 11 times

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High peak electron mobilities were observed in freestanding c-plane GaN layers. Two well-defined electrical layers, a low mobility degenerate interface layer, and a high mobility nondegenerate bulk layer, were present in these samples. The carrier concentrations and mobilities for the layers were extracted using two methods: (1) magnetic field dependent Hall effect analysis; and (2) a simple two layer Hall model with the assumption that one of the layers is degenerate. The electron Hall mobility of the bulk layer is found to peak at nearly 8000 cm2/V s at low temperature using the magnetic field dependent Hall effect analysis. © 2001 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Relaxation oscillation phenomena in cryogenic Si diodes

Bernhard P. Merz and Rudolf A. Treumann

Appl. Phys. Lett. 78, 1876 (2001); http://dx.doi.org/10.1063/1.1357447 (3 pages)

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We present observations of unusual oscillatory behavior of Si diodes at low temperatures. The oscillations observed are stable, highly reproducible and obey a frequency-current relation that is linear over nearly eight decades in current strength allowing for precision measurement of currents over the whole range down to picoampere currents. © 2001 American Institute of Physics.
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85.30.Kk Junction diodes
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

Auger recombination in heavily carbon-doped GaAs

R. K. Ahrenkiel, R. Ellingson, W. Metzger, D. I. Lubyshev, and W. K. Liu

Appl. Phys. Lett. 78, 1879 (2001); http://dx.doi.org/10.1063/1.1357213 (3 pages) | Cited 6 times

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The recombination parameters in heavily carbon-doped GaAs are of considerable importance to current bipolar transistor technology. Here, we used time-resolved photoluminescence and quantum-efficiency techniques in parallel to measure the very short lifetimes expected at high doping. The samples were isotype double heterostructures, with the structure Al(0.4)Ga(0.6)As/GaAs/Al(0.4)Ga(0.6)As, grown by molecular-beam epitaxy. The doping level was varied from 5×1018 to 1×1020 cm−3 for the samples described here. For doping levels greater than 1×1019 cm−3, the lifetime decreased as the inverse of the cube of the hole density, indicating that phonon and impurity-assisted Auger processes are dominant. © 2001 American Institute of Physics.
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71.55.Eq III-V semiconductors
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Hot-carrier-induced oxide charge trapping and interface trap creation in metal–oxide–semiconductor devices studied by hydrogen/deuterium isotope effect

Kangguo Cheng, Jinju Lee, Karl Hess, and Joseph W. Lyding

Appl. Phys. Lett. 78, 1882 (2001); http://dx.doi.org/10.1063/1.1359143 (3 pages)

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A method based on the hydrogen/deuterium isotope effect is proposed to separate and quantify the effects of interface trap creation and oxide charge trapping on hot-carrier-induced degradation in n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs). Hydrogenated and deuterated transistors were subjected to hot-carrier stress with a fixed drain voltage Vds and various gate voltages Vgs. The threshold voltage Vt and interface trap density Nit were recorded as a function of stress time. It is found that at low Vgs stress when equal numbers of interface traps are created, the shift of Vt is larger in hydrogenated transistors than in deuterated transistors. Increasing Vgs to 1/3Vds produces no noticeable difference of Vt shift in these two kinds of transistors. However, further increasing Vgs results in larger Vt shift in deuterated transistors than in hydrogenated ones. From a quantitative analysis, the contribution of oxide charge trapping to Vt shift is separated from the contribution of interface trap creation. The results suggest that interface trap creation is the dominant mechanism for hot-carrier-induced degradation in n-channel MOSFETs. © 2001 American Institute of Physics.
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85.30.Tv Field effect devices
73.50.Fq High-field and nonlinear effects
73.20.-r Electron states at surfaces and interfaces
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Anomalous transport on polymeric porous film electrodes in the dopant-induced insulator-to-conductor transition analyzed by electrochemical impedance

Germà Garcia-Belmonte, Juan Bisquert, Ernesto C. Pereira, and Francisco Fabregat-Santiago

Appl. Phys. Lett. 78, 1885 (2001); http://dx.doi.org/10.1063/1.1354671 (3 pages) | Cited 7 times

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In the present letter, we have identified anomalous transport patterns on conducting polymer thin-film electrodes [poly(thiophene-3-acetic acid)] by means of electrochemical impedance measurements. This type of electrical behavior yields conductance responses exhibiting frequency dispersion at frequencies in excess of the ac onset ωc. The study of impedance spectra under variation of the applied potential allows to determine the threshold potential at which a dopant-induced insulator-to-conductor transition takes place. Moreover, since the charge carrier concentration in the polymer matrix is directly modulated by the insertion of anions via the applied potential, some relevant aspects of the doping process, such as the dimensionality of the ion insertion, can be properly investigated. © 2001 American Institute of Physics.
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73.61.Ph Polymers; organic compounds
72.15.Nj Collective modes (e.g., in one-dimensional conductors)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
82.35.Cd Conducting polymers
72.80.Le Polymers; organic compounds (including organic semiconductors)
82.45.Mp Thin layers, films, monolayers, membranes
72.60.+g Mixed conductivity and conductivity transitions
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