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26 Mar 2001

Volume 78, Issue 13, pp. 1805-1950

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In situ x-ray microscopic observation of the electromigration in passivated Cu interconnects

G. Schneider, D. Hambach, B. Niemann, B. Kaulich, J. Susini, N. Hoffmann, and W. Hasse

Appl. Phys. Lett. 78, 1936 (2001); http://dx.doi.org/10.1063/1.1356446 (3 pages) | Cited 10 times

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X-ray imaging of electromigration in a passivated Cu interconnect was performed with 100-nm spatial resolution. A time sequence of 200 images, recorded with the European Synchrotron Radiation Facility x-ray microscope in 2.2 h at 4 keV photon energy, visualizes the mass flow of Cu at current densities up to 2×107 A/cm2. Due to the high penetration power through matter and the element specific image contrast, x-ray microscopy is a unique tool for time-resolved, quantitative mass transport measurements in interconnects. Model calculations predict that failures in operating microprocessors are detectable with 30 nm resolution by nanotomography. © 2001 American Institute of Physics.
Show PACS
85.40.Ls Metallization, contacts, interconnects; device isolation
66.30.Qa Electromigration
68.37.Yz X-ray microscopy
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
07.85.Tt X-ray microscopes

Resonance frequency and Q factor mapping by ultrasonic atomic force microscopy

Kazushi Yamanaka, Yoshiki Maruyama, Toshihiro Tsuji, and Keiichi Nakamoto

Appl. Phys. Lett. 78, 1939 (2001); http://dx.doi.org/10.1063/1.1357540 (3 pages) | Cited 42 times

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We developed an improved ultrasonic atomic force microscopy (UAFM) for mapping resonance frequency and Q factor of a cantilever where the tip is in linear contact with the sample. Since the vibration amplitude at resonance is linearly proportional to the Q factor, the resonance frequency and Q factor are measured in the resonance tracking mode by scanning the sample in the constant force mode. This method enables much faster mapping of the resonance frequency and Q factor than the previous one using a network analyzer. In this letter, we describe the principle and instrumentation of the UAFM and show images of carbon-fiber-reinforced plastic composites. © 2001 American Institute of Physics.
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07.79.Lh Atomic force microscopes
68.37.Ps Atomic force microscopy (AFM)
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
43.35.Yb Ultrasonic instrumentation and measurement techniques
68.37.Tj Acoustic force microscopy
43.58.Ls Acoustical lenses and microscopes

Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN

Chul Huh, Sang-Woo Kim, Hyun-Min Kim, Dong-Joon Kim, and Seong-Ju Park

Appl. Phys. Lett. 78, 1942 (2001); http://dx.doi.org/10.1063/1.1358356 (3 pages) | Cited 20 times

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The effects of an alcohol-based (NH4)2S solution [t-C4H9OH+(NH4)2S] treatment on Pt Ohmic contacts to p-type GaN are presented. The specific contact resistance decreased by three orders of magnitude from 2.56×10−2 to 4.71×10−5 Ω cm2 as a result of surface treatment using an alcohol-based (NH4)2S solution compared to that of the untreated sample. The O 1s and Pt 4f core-level peaks in the x-ray photoemission spectra showed that the alcohol-based (NH4)2S treatment was effective in removing of the surface oxide layer. Compared to the untreated sample, the alcohol-based (NH4)2S-treated sample showed a Ga 2p core-level peak which was shifted toward the valence-band edge by 0.25 eV, indicating that the surface Fermi level was shifted toward the valence-band edge. These results suggest that the surface barrier height for hole injection from Pt metal to p-type GaN can be lowered by the surface treatment, thus resulting in a drastic reduction in specific contact resistance. © 2001 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
84.32.Dd Connectors, relays, and switches
73.40.Cg Contact resistance, contact potential
81.65.Ps Polishing, grinding, surface finishing
79.60.Jv Interfaces; heterostructures; nanostructures
73.20.At Surface states, band structure, electron density of states

Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications

A. R. Stonas, T. Margalith, S. P. DenBaars, L. A. Coldren, and E. L. Hu

Appl. Phys. Lett. 78, 1945 (2001); http://dx.doi.org/10.1063/1.1352663 (3 pages) | Cited 18 times

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The authors have developed a wet band gap-selective photoelectrochemical etching process to produce deep undercuts (∼500 μm) into InGaN/GaN heterostructures. These undercuts were used in a lift-off process which successfully transferred device-scale (100 μm diameter, 5 μm thick) disks from their underlying sapphire substrates to another substrate. Experiments were conducted using a lamp-and-filter arrangement, employing n-type and p-type GaN pieces as filters. Polishing was conducted to smooth the resulting substrate-transferred GaN disks. © 2001 American Institute of Physics.
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81.65.Cf Surface cleaning, etching, patterning
81.05.Ea III-V semiconductors
81.65.Ps Polishing, grinding, surface finishing
82.50.Hp Processes caused by visible and UV light
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
82.45.Mp Thin layers, films, monolayers, membranes

High-resolution imaging of surface acoustic wave scattering

T. Hesjedal and G. Behme

Appl. Phys. Lett. 78, 1948 (2001); http://dx.doi.org/10.1063/1.1357453 (3 pages) | Cited 4 times

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We examine the scattering of surface acoustic waves (SAWs) by single dots, periodic and locally damped two-dimensional dot lattices. Employing the scanning acoustic force microscope, SAW fields are imaged with nanometer resolution. We study the influence of a roughly wavelength-sized single dot on SAW diffraction. In order to distinguish between forward- and backscattered components, we insonify the dot with the pump and probe beam under 0° and 90°. We furthermore analyze the SAW diffraction by a regular dot array. The wave field appears to be localized around the dots. Adding surface distortions, the regular SAW localization pattern brakes down in the vicinity of the distortion. © 2001 American Institute of Physics.
Show PACS
68.37.Tj Acoustic force microscopy
68.35.Iv Acoustical properties
07.79.Lh Atomic force microscopes
68.37.Ps Atomic force microscopy (AFM)
43.35.Sx Acoustooptical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography
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