APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

2 Apr 2001

Volume 78, Issue 14, pp. 1961-2084

Return to All Sections
back to top
RSS Feeds

Electrical properties of three-terminal ballistic junctions

H. Q. Xu

Appl. Phys. Lett. 78, 2064 (2001); http://dx.doi.org/10.1063/1.1360229 (3 pages) | Cited 83 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Based on the ballistic nature of electron transport, exploitable nonlinear transport phenomena are predicted for three-terminal ballistic junctions (TBJs). For a symmetric TBJ, it is shown that when finite voltages Vl and Vr are applied in push-pull fashion, with Vl = V and Vr = −V, to the left and right branches, the voltage output Vc from the central branch will always be negative. This characteristic appears even when the device symmetry is broken, provided that ∣V∣ is greater than a certain threshold. It is also shown that the TBJs exhibit parabolic behavior for Vc vs V, in the weak nonlinear response regime. Potential applications of these devices in nanoelectronics are discussed. © 2001 American Institute of Physics.
Show PACS
73.23.Ad Ballistic transport
73.63.Rt Nanoscale contacts
85.35.Ds Quantum interference devices

Integration of n-type and p-type quantum-well infrared photodetectors for sequential multicolor operation

E. Dupont, M. Gao, Z. Wasilewski, and H. C. Liu

Appl. Phys. Lett. 78, 2067 (2001); http://dx.doi.org/10.1063/1.1359482 (3 pages) | Cited 7 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A multicolor infrared photodetector based on the epitaxial integration of an n-type with a p-type GaAs/AlGaAs quantum-well stack is experimentally demonstrated. Additionally, a quantum-well GaAs light-emitting diode is inserted between the stacks to achieve up-conversion of mid-infrared radiation to near-infrared signal. This device shows a remarkable selectivity on wavelength: depending on the bias voltage the peak wavelength detection can be switched on and off between 9.1 and 4.85 μm. © 2001 American Institute of Physics.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.79.Pw Imaging detectors and sensors
78.67.De Quantum wells

Self-aligned double-gate single-electron transistor derived from 0.12-μm-scale electron-beam lithography

K. Nishiguchi and S. Oda

Appl. Phys. Lett. 78, 2070 (2001); http://dx.doi.org/10.1063/1.1360778 (3 pages) | Cited 9 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A single-electron transistor (SET) with two gates was fabricated via the self-aligned evaporation of Al into a trench structure comprised of Si and SiO2. The initial trench, which was comparable to 0.12 μm lines and defined by electron-beam lithography, was reduced to 0.05×0.02 μm by a slightly anisotropic etching characteristic. These processes allow for the production of SET devices using current silicon fabrication techniques. The simultaneous formation of two gates allows for one gate to be used to control the background charge of each device. The shift of Coulomb oscillation peaks was clearly shown by controlling the second gate bias. An inverter logic operation at a temperature of 5 K with a gain of 1.3 was obtained. These characteristics indicate that such SET logic devices, based on a combination of the good performance of the Al SET and the high level of control of the fabrication of Si technology, have considerable potential for future use. © 2001 American Institute of Physics.
Show PACS
85.35.Gv Single electron devices
85.40.Hp Lithography, masks and pattern transfer
73.23.Hk Coulomb blockade; single-electron tunneling
84.30.Sk Pulse and digital circuits
81.65.Cf Surface cleaning, etching, patterning

Silicon carbide and silicon carbide:germanium heterostructure bipolar transistors

K. J. Roe, G. Katulka, J. Kolodzey, S. E. Saddow, and D. Jacobson

Appl. Phys. Lett. 78, 2073 (2001); http://dx.doi.org/10.1063/1.1358851 (3 pages) | Cited 15 times

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this letter, we report on heterostructure bipolar transistors (HBTs) based on silicon carbide (SiC) and a silicon carbide:germanium (SiC:Ge) alloy. The SiC:Ge base alloy was formed by the ion implantation of Ge into p-type 4H–SiC and subsequent annealing. HBT mesa structures were fabricated using a reactive ion etching process. The incorporation of Ge was found to increase the gain and the Early voltage of the devices. A common-emitter current gain (β) of greater than 3 was measured for the SiC:Ge HBTs. Homojunction SiC transistors were fabricated as a reference using the same process (except no Ge in the base region) and exhibited a β of 2.2. The transistors exhibited high breakdown voltages (>50 V without passivation), that typify SiC-based devices. These results indicate that SiC:Ge is a promising material for use in SiC-based heterostructure devices. © 2001 American Institute of Physics.
Show PACS
85.30.Pq Bipolar transistors
81.65.Cf Surface cleaning, etching, patterning
61.72.up Other materials
85.40.Ry Impurity doping, diffusion and ion implantation technology
61.72.Cc Kinetics of defect formation and annealing
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close