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2 Apr 2001

Volume 78, Issue 14, pp. 1961-2084

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Improved extraction of the activation energy of the leakage current in silicon p–n junction diodes

A. Poyai, E. Simoen, C. Claeys, A. Czerwinski, and E. Gaubas

Appl. Phys. Lett. 78, 1997 (2001); http://dx.doi.org/10.1063/1.1359487 (3 pages) | Cited 5 times

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An accurate method is proposed for the extraction of the activation energy ET from the volume generation current density JgA in silicon p–n junctions. It combines temperature-dependent current–voltage (I–V) and capacitance–voltage measurements on an array of diodes with different geometry, in order to separate the peripheral from the volume components. The JgA can be found from the volume leakage current by subtraction of the volume diffusion current JdA, which is calculated from the forward I–V characteristic. To derive the correct slope from an Arrhenius plot of the JgA, several additional corrections have been applied. One is the temperature dependence of the depletion width, which is derived from the corrected volume capacitance. The most important ET change is shown to come from the temperature dependence of the recombination lifetime. © 2001 American Institute of Physics.
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85.30.Kk Junction diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.55.Cn Elemental semiconductors

Athermal annealing of low-energy boron implants in silicon

D. W. Donnelly, B. C. Covington, J. Grun, R. P. Fischer, M. Peckerar, and C. L. Felix

Appl. Phys. Lett. 78, 2000 (2001); http://dx.doi.org/10.1063/1.1359784 (3 pages) | Cited 5 times

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Silicon samples that have been ion implanted with boron at energies below 3 keV have been athermally annealed. The annealing process has been characterized using secondary ion mass spectrometry and infrared absorption spectroscopy. The athermally annealed samples show activation comparable to that for thermally annealed samples, but with much less boron diffusion. The activation in the athermally annealed samples is shown to be much higher than would be achieved by recrystallization of the amorphous layer. © 2001 American Institute of Physics.
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61.72.Cc Kinetics of defect formation and annealing
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.05.Cy Elemental semiconductors
61.72.uf Ge and Si
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
78.30.Am Elemental semiconductors and insulators
66.30.J- Diffusion of impurities

Coulomb suppression of surface noise

V. A. Kochelap, V. N. Sokolov, O. M. Bulashenko, and J. M. Rubí

Appl. Phys. Lett. 78, 2003 (2001); http://dx.doi.org/10.1063/1.1360227 (3 pages) | Cited 2 times

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We have generalized the model of the surface noise taking into account the self-consistent electrostatic interaction and transverse electron transport in a conductive channel. Analyzing this model, we have found that the Coulomb correlations between trapped and conducting electrons considerably suppress the surface noise. The suppression effect is shown to be frequency dependent and especially large for noisy conducting channels. © 2001 American Institute of Physics.
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72.70.+m Noise processes and phenomena
73.25.+i Surface conductivity and carrier phenomena
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Different transfer paths for thermally activated electrons and holes in self-organized Ge/Si(001) islands in a multilayer structure

C. J. Huang, Y. Tang, D. Z. Li, B. W. Cheng, L. P. Luo, J. Z. Yu, and Q. M. Wang

Appl. Phys. Lett. 78, 2006 (2001); http://dx.doi.org/10.1063/1.1360783 (3 pages) | Cited 10 times

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We investigated the temperature dependence (10–250 K) of the photoluminescence (PL) emission spectrum of self-organized Ge/Si(001) islands in a multilayer structure. With elevated temperature, we find that the thermally activated holes and electrons are gathered by the Ge islands in different ways. The holes drift from the wetting layer into the islands, while the electrons, confined in Si due to type-II band alignment, leak into the Ge islands by the electrostatic interaction with the holes accumulated there. It results in an increase of the integrated intensity of island-related PL at a certain temperature range and a reduction of the phonon energy in the phonon-assisted PL of the islands by involving a type-I transition into a type-II transition. © 2001 American Institute of Physics.
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78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
78.67.Hc Quantum dots
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Field emission from polymer-converted carbon films by ultraviolet radiation

Z. Sun, S. M. Huang, Y. F. Lu, J. S. Chen, Y. J. Li, B. K. Tay, S. P. Lau, G. Y. Chen, and Y. Sun

Appl. Phys. Lett. 78, 2009 (2001); http://dx.doi.org/10.1063/1.1360233 (3 pages) | Cited 4 times

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A polymer, poly(phenylcarbyne) (PPC), was converted to carbon film by ultraviolet pulsed-laser (KrF, λ = 248 nm) irradiation in nitrogen atmosphere at room temperature. The irradiated PPC consisted of fine graphitic carbon particles of several tens of nm in size, and exhibited good field emission properties. Low turn-on emission field of 2 V/μm (at 1 nA/cm2), high emission current density of 20 mA/cm2 (at 12 V/μm), and high emission luminescent spots density of 104/cm2 were observed for the polymer film irradiated by a pulsed-laser fluence of 40 mJ/cm2. We demonstrate multiple-lines and 2×5 array field emission patterns using the laser irradiation of PPC. © 2001 American Institute of Physics.
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79.70.+q Field emission, ionization, evaporation, and desorption
81.05.U- Carbon/carbon-based materials
85.45.Db Field emitters and arrays, cold electron emitters
81.15.Fg Pulsed laser ablation deposition

Conservation of flatband conditions for DySi2 monolayers on n-type Si(111)

S. Vandré, C. Preinesberger, W. Busse, and M. Dähne

Appl. Phys. Lett. 78, 2012 (2001); http://dx.doi.org/10.1063/1.1360782 (3 pages) | Cited 9 times

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We propose a low-resistivity metal/Si/DySi2/Si multilayer Ohmic contact to n-type Si. For a DySi2 monolayer on n-type Si(111), the Fermi level has been found to be located only 0.08 eV below the conduction-band minimum of Si, corresponding to flatband conditions. Here, we demonstrate that this Fermi-level position is conserved to a large extent upon Si overgrowth of the monolayer, allowing us to exploit the flatband conditions for device applications under ambient conditions. © 2001 American Institute of Physics.
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73.40.Ns Metal-nonmetal contacts
73.20.At Surface states, band structure, electron density of states
73.40.Cg Contact resistance, contact potential
79.60.Jv Interfaces; heterostructures; nanostructures

Room-temperature Ohmic contact on n-type GaN with surface treatment using Cl2 inductively coupled plasma

Ho Won Jang, Chang Min Jeon, Jong Kyu Kim, and Jong-Lam Lee

Appl. Phys. Lett. 78, 2015 (2001); http://dx.doi.org/10.1063/1.1360784 (3 pages) | Cited 26 times

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A room-temperature Ti/Al Ohmic contact on n-type GaN was obtained by surface treatment using Cl2 inductively coupled plasma treatment. The specific contact resistivity was dramatically decreased from the Schottky behavior to 9.4×10−6 Ω cm2 by the treatment. The binding energy of the Ga–N bond and the atomic ratio of Ga/N were simultaneously increased after the plasma treatment. This provides evidence that N vacancies, acting as donors for electrons, were produced at the etched surface, resulting in a shift of the Fermi level near to the conduction band. This leads to the reduction in contact resistivity through the decrease of the Schottky barrier for the conduction of electrons. © 2001 American Institute of Physics.
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73.61.Ey III-V semiconductors
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
81.05.Ea III-V semiconductors
81.65.Ps Polishing, grinding, surface finishing
61.72.J- Point defects and defect clusters
73.40.Cg Contact resistance, contact potential
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