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9 Apr 2001

Volume 78, Issue 15, pp. 2095-2255

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Electronic sensing of vapors with organic transistors

B. Crone, A. Dodabalapur, A. Gelperin, L. Torsi, H. E. Katz, A. J. Lovinger, and Z. Bao

Appl. Phys. Lett. 78, 2229 (2001); http://dx.doi.org/10.1063/1.1360785 (3 pages) | Cited 195 times

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We show that organic thin-film transistors have suitable properties for use in gas sensors. Such sensors possess sensitivity and reproducibility in recognizing a range of gaseous analytes. A wealth of opportunities for chemical recognition arise from the variety of mechanisms associated with different semiconductor–analyte interactions, the ability to vary the chemical constitution of the semiconductor end/side groups, and also the nature of the thin-film morphology. © 2001 American Institute of Physics.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
82.80.-d Chemical analysis and related physical methods of analysis
85.30.Tv Field effect devices
85.65.+h Molecular electronic devices

Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding

P. D. Moran, D. Chow, A. Hunter, and T. F. Kuech

Appl. Phys. Lett. 78, 2232 (2001); http://dx.doi.org/10.1063/1.1359140 (3 pages) | Cited 12 times

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High-frequency integrated circuit applications of GaSb-based materials are hampered by the lack of a suitable lattice-matched insulating substrate. Wafer bonding was used to fabricate InAs/AlSb/GaSb-based heterojunction bipolar transistors (HBTs) on an insulating sapphire substrate through a low temperature bonding process that results in a high bond strength and permitted the mechanical and chemomechanical removal of the initial GaSb substrate. The use of selective etches allows for the retention of the epitaxial device layers over virtually the entire wafer area. Minimal degradation of the transferred layers occurred in the bonding and substrate removal process. The resulting transferred structures were fabricated into functional HBTs exhibiting a dc current gain of ∼5. © 2001 American Institute of Physics.
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85.30.Pq Bipolar transistors
81.65.Cf Surface cleaning, etching, patterning
81.65.Ps Polishing, grinding, surface finishing

Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors

L. McCarthy, I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, S. P. DenBaars, M. J. W. Rodwell, and U. K. Mishra

Appl. Phys. Lett. 78, 2235 (2001); http://dx.doi.org/10.1063/1.1358358 (3 pages) | Cited 21 times

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We demonstrate an AlGaN/GaN heterojunction bipolar transistor on a substrate grown using the lateral epitaxial overgrowth (LEO) technique. Common emitter characteristics show a current gain of 3. Active layers were grown by plasma-assisted molecular-beam epitaxy on metal–organic chemical-vapor-deposition-grown templates on sapphire. The collector–emitter leakage mechanism in these devices is found to be local punch-through associated with base layer compensation near the dislocations. LEO wing regions (nondislocated) were found to reduce the emitter–collector leakage by four orders of magnitude over adjacent window regions which had a dislocation density of 108 cm−2. Varying the doping profile through the base confirms that the mechanism for leakage is local punch-through due to compensation. This compensation mechanism is consistent with simulations which assume a donor-state line density of 107 cm−1. The implications of the emitter–collector leakage for dc device characterization are also discussed. © 2001 American Institute of Physics.
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85.30.Pq Bipolar transistors
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Observation of double peak in the substrate current versus gate voltage characteristics of n-channel metal–oxide–semiconductor field effect transistors

K. G. Anil, I. Eisele, and S. Mahapatra

Appl. Phys. Lett. 78, 2238 (2001); http://dx.doi.org/10.1063/1.1361279 (3 pages) | Cited 1 time

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By employing sensitive current measurements at low drain voltages for n-channel metal–oxide–semiconductor field effect transistors with different channel dopings, substrate current versus gate voltage characteristics with two peaks were obtained for devices with low channel doping at 77 K. This differs from the single peak bell shaped curves reported in the literature. The data are analyzed and suggest that the second peak is due to the contribution of electron–electron interactions to the high energy tail of the electron energy distribution. Indirect contributions by the thermal tail of the electron energy distribution and ionized impurity scattering that make the second peak visible are also discussed. © 2001 American Institute of Physics.
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85.30.Tv Field effect devices
73.50.Fq High-field and nonlinear effects

Heterojunction wavelength-tailorable far-infrared photodetectors with response out to 70 μm

A. G. U. Perera, S. G. Matsik, B. Yaldiz, H. C. Liu, A. Shen, M. Gao, Z. R. Wasilewski, and M. Buchanan

Appl. Phys. Lett. 78, 2241 (2001); http://dx.doi.org/10.1063/1.1361283 (3 pages) | Cited 17 times

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Results are presented on the performance of a heterojunction interfacial workfunction internal photoemission (HEIWIP) wavelength-tailorable detector. The detection mechanism is based on free-carrier absorption in the heavily doped emitter regions and internal emission across a workfunction barrier caused by the band gap offset at the heterojunction. The HEIWIP detectors have the high responsivity of free-carrier absorption detectors and the low dark current of quantum well infrared photodector type detectors. For a 70±2 cutoff wavelength detector, a responsivity of 11 A/W and a D∗ = 1×1013 cmmath/W with a photocurrent efficiency of 24% was observed at 20 μm. From the 300 K background photocurrent, the background limited performance (BLIP) temperature for this HEIWIP detector was estimated to be 15 K. This HEIWIP detector provides an exciting approach to far-infrared detection. © 2001 American Institute of Physics.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
73.50.Pz Photoconduction and photovoltaic effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

SrTiO3-based metal–insulator–semiconductor heterostructures

Ilaria Pallecchi, Giuseppe Grassano, Daniele Marré, Luca Pellegrino, Marina Putti, and Antonio Sergio Siri

Appl. Phys. Lett. 78, 2244 (2001); http://dx.doi.org/10.1063/1.1363690 (3 pages) | Cited 39 times

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We explored the feasibility of employing strontium titanate (SrTiO3) as semiconducting material in field-effect metal–insulator–semiconductor epitaxial heterostructures. This idea was suggested by the observation of a dramatic effect of the oxygen deficiency on SrTiO3−δ transport properties, which brings about metallic behavior with low-temperature mobility values comparable with those commonly found for silicon. By pulsed-laser deposition, we realized patterned field-effect devices, showing a resistance enhancement up to 90%. This promising result could open perspectives for crystalline-oxide electronics. © 2001 American Institute of Physics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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