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16 Apr 2001

Volume 78, Issue 16, pp. 2267-2404

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Organic light-emitting devices with saturated red emission using 6,13-diphenylpentacene

L. C. Picciolo, H. Murata, and Z. H. Kafafi

Appl. Phys. Lett. 78, 2378 (2001); http://dx.doi.org/10.1063/1.1362259 (3 pages) | Cited 48 times

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Organic electroluminescent devices with saturated red emission were developed using 6,13-diphenylpentacene (DPP) doped into tris(8-hydroxyquinolinato) aluminum III (Alq3). DPP exhibits a narrow emission spectrum giving rise to a saturated red peak, centered around 625 nm, with excellent chromaticity coordinates (x = 0.63 and y = 0.34) in accordance with the Commission Internationale de l’Eclairage. An absolute photoluminescence (PL) quantum yield (ϕPL) of ∼30% was measured for a composite film of 0.55 mol % of DPP doped into Alq3. An electroluminescence (EL) quantum efficiency of 1.3% at 100 A/m2, close to the estimated theoretical limit (1.5%), was measured for an unoptimized device structure that consists of an active emissive layer sandwiched between hole- and electron-transport layers. In addition, the EL quantum efficiency is constant or stable over a wide range of current densities (1–1000 A/m2) or luminance values (1–1000 cd/m2). © 2001 American Institute of Physics.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.66.Qn Polymers; organic compounds
78.55.Kz Solid organic materials

Optical temperature probe

Brett A. Hooper, Yacov Domankevitz, R. Rox Anderson, and Charles Lin

Appl. Phys. Lett. 78, 2381 (2001); http://dx.doi.org/10.1063/1.1364509 (3 pages) | Cited 3 times

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In order to quantify the energy deposition at a dielectric-tissue interface, a simple optical temperature probe to measure the transient temperature rise of the laser-heated layer at this interface is presented. The optical temperature probe (1) is noninvasive, so as not to alter the optical, thermal, and mechanical properties of the sample, (2) has a fast time response (nanoseconds), in order to measure the temperature increase during a short laser pulse, and (3) has high spatial resolution (micrometers), in order to probe only the heated layer. The probe is also capable of detecting ablation at the optic-tissue interface. © 2001 American Institute of Physics.
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07.20.Dt Thermometers
07.60.-j Optical instruments and equipment

Influence of the injection current dependence of gain suppression on the nonlinear dynamics of semiconductor lasers

C. G. Lim, S. Iezekiel, and C. M. Snowden

Appl. Phys. Lett. 78, 2384 (2001); http://dx.doi.org/10.1063/1.1363698 (3 pages) | Cited 5 times

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A detailed numerical analysis of the nonlinear dynamics of a directly modulated 1.55 μm InGaAsP distributed-feedback laser diode (LD) is carried out. Results show that when simulating the nonlinear dynamics of LDs, it is important to account for the gain suppression being dependent on the injection current. Only when this dependency of gain suppression is included in the conventional single-mode rate equations, can excellent agreement between simulated and measured results be achieved. © 2001 American Institute of Physics.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Adjustable ultraviolet-sensitive detectors based on amorphous silicon

Marko Topič, Helmut Stiebig, Mathias Krause, and Heribert Wagner

Appl. Phys. Lett. 78, 2387 (2001); http://dx.doi.org/10.1063/1.1365948 (3 pages) | Cited 9 times

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Thin-film detectors made of hydrogenated amorphous silicon (a-Si:H) and amorphous silicon carbide (a-SiC:H) with adjustable sensitivity in the ultraviolet (UV) spectrum were developed. Thin PIN diodes deposited on glass substrates in N–I–P layer sequence with a total thickness of down to 33 nm and a semitransparent Ag front contact were fabricated. The optimized diodes with a 10 nm Ag contact exhibit spectral response values above 80 mA/W in the wavelength range from 295 to 395 nm with a maximum of 91 mA/W at 320 nm. For longer wavelengths, the spectral response drops by 50% at 450 nm. Increasing the thickness of the Ag front contact leads to a narrowing of the spectral response at around 320 nm, which allows the adjustment from a broad UV to a selective UV–B-sensitive detector. © 2001 American Institute of Physics.
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42.79.Pw Imaging detectors and sensors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors

Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

J. Hernando, J. L. Sánchez-Rojas, A. Guzmán, E. Muñoz, J. M. G. Tijero, D. González, G. Aragón, and R. García

Appl. Phys. Lett. 78, 2390 (2001); http://dx.doi.org/10.1063/1.1365951 (3 pages) | Cited 2 times

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Longwavelength InGaAs/GaAs quantum-well infrared photodetectors with indium contents ranging from 25% to 40% have been grown and characterized. Material quality has been assessed by photoluminescence and transmission electron microscopy. Intersubband photocurrent, excited by polarized (TE or TM) infrared light, has been analyzed in order to determine the responsivity for normal-incident radiation. It is found that the TE to TM responsivity ratio is lower than 10% in all the samples studied. By changing the indium content from 25% to 40%, the increase in the TE to TM photoresponse ratio is as low as 3%. Our results are opposite to previous reports of experimental observation of significant TE-polarized light absorption. However, the low efficiency for normal-incident radiation agrees with various theoretical predictions. © 2001 American Institute of Physics.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects
78.67.De Quantum wells
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