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16 Apr 2001

Volume 78, Issue 16, pp. 2267-2404

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Quantitative thermal imaging by synchronous thermoreflectance with optimized illumination wavelengths

G. Tessier, S. Holé, and D. Fournier

Appl. Phys. Lett. 78, 2267 (2001); http://dx.doi.org/10.1063/1.1363696 (3 pages) | Cited 39 times

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Using thermoreflectance microscopy with a camera, we have designed a system which delivers submicronic images of the alternative temperature variations in integrated circuits working in a modulated regime. A careful choice of the illumination wavelength permits us to highlight the heating in chosen parts of the sample and to optimize the thermoreflectance signal. We measure and explain the modifications of the photothermal response which are induced by the presence of a passivation layer. A calibration conducted on various materials with a thermocouple gives access to the absolute alternative temperature variations in integrated circuits working at frequencies between 0.1 Hz (quasipermanent regime) and 5 MHz. © 2001 American Institute of Physics.
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85.40.Qx Microcircuit quality, noise, performance, and failure analysis
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
42.79.Pw Imaging detectors and sensors
07.20.-n Thermal instruments and apparatus

Monolithic-integrated two-wavelength laser diodes for digital-versatile-disk/compact-disk playback

Kazuhiko Nemoto, Takafumi Kamei, Hiroaki Abe, Daisuke Imanishi, Hironobu Narui, and Shoji Hirata

Appl. Phys. Lett. 78, 2270 (2001); http://dx.doi.org/10.1063/1.1360231 (3 pages) | Cited 3 times

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We have developed a monolithic two-wavelength laser diode, which emits 650 and 780 nm wavelengths. This device, which has a separated-confinement-heterostructure multi-quantum-well active region and a gain-guiding tapered-stripe structure, is fabricated using only two steps of metal organic chemical vapor deposition. The operating currents at 5 mW are 57.0 and 61.5 mA for the 650 and 780 nm elements, respectively. The relative intensity noise of the 650 and 780 nm elements was below −130 dB/Hz up to 70 °C without high-frequency superposition circuits. © 2001 American Institute of Physics.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Vb Optical storage systems, optical disks
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.82.Fv Hybrid systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Fabrication of arrays of two-dimensional micropatterns using microspheres as lenses for projection photolithography

Ming-Hsien Wu and George M. Whitesides

Appl. Phys. Lett. 78, 2273 (2001); http://dx.doi.org/10.1063/1.1351525 (3 pages) | Cited 42 times

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This letter demonstrates the use of an array of transparent microspheres in forming repetitive, micrometer-scale patterns in photoresist, starting from masks with centimeter-scale patterns. A transparent microsphere with diameter d>1.5 μm acts as a lens and reduces centimeter-scale images into micrometer-scale images on its image plane. A planar array of microspheres projects the image of an illuminated mask onto a corresponding array of micropatterns on their common image plane. We have prepared arrays of polystyrene microspheres (d = 1.5–10 μm) embedded in a transparent membrane to generate repetitive patterns in photoresist, and have transferred the resulting patterns into metal films by liftoff. The optical system of this technique is related to that used in conventional projection photolithography, but differs in that the lens that accomplishes size reduction is positioned within 10 μm of the photoresist. The microspheres generate uniform patterns over an area of ∼2 cm2, using a mask with area ∼ 25×25 cm2 illuminated with a white light source. This method can generate submicron features either within a micropattern or between neighboring patterns. © 2001 American Institute of Physics.
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85.40.Hp Lithography, masks and pattern transfer
42.79.Bh Lenses, prisms and mirrors
42.70.Jk Polymers and organics

Enhanced peak power and short pulse operation of planar waveguide CO2 lasers

F. Villarreal, P. R. Murray, H. J. Baker, and D. R. Hall

Appl. Phys. Lett. 78, 2276 (2001); http://dx.doi.org/10.1063/1.1359148 (3 pages) | Cited 4 times

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We report a large peak power enhancement and reduction in pulse width for planar waveguide carbon dioxide lasers. Gain modulation through rf discharge power switching produces trains of laser pulses with peak power levels at up to 38 times the cw power level, with a pulse duration as low as 10 μs. Operation at repetition rates in the kHz region preserves the average power (100 W) of the normal cw/long pulse mode of operation. The laser is shown to operate close to the predicted boundaries dictated by thermal loading of the discharge. © 2001 American Institute of Physics.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Photonic crystal microcavities with self-assembled InAs quantum dots as active emitters

C. Reese, C. Becher, A. Imamoğlu, E. Hu, B. D. Gerardot, and P. M. Petroff

Appl. Phys. Lett. 78, 2279 (2001); http://dx.doi.org/10.1063/1.1362334 (3 pages) | Cited 34 times

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We report the use of self-assembled InAs quantum dots as active emitters in a photonic crystal microcavity. We have fabricated defect microcavities by removing 37 and 61 air holes from a triangular lattice in a photonic crystal membrane, and obtained quality factors in excess of 1000. © 2001 American Institute of Physics.
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42.70.Qs Photonic bandgap materials
78.67.Hc Quantum dots

Nondestructive readout of photochromic optical memory using photocurrent detection

Tsuyoshi Tsujioka, Yuji Hamada, Kenichi Shibata, Akira Taniguchi, and Takashi Fuyuki

Appl. Phys. Lett. 78, 2282 (2001); http://dx.doi.org/10.1063/1.1366365 (3 pages) | Cited 41 times

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We proposed and demonstrated a nondestructive readout method using photocurrent detection for photon-mode photochromic memory. The principle of this readout method, which utilized the ionization potential change according to photoisomerzation reaction, was confirmed by using a medium with a photochromic diarylethene layer and phthalocyanine photoabsorbing layer, and by using a near-infrared readout light. We demonstrated perfect nondestructive readout operations over 106 times. © 2001 American Institute of Physics.
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42.79.Vb Optical storage systems, optical disks
42.70.Ln Holographic recording materials; optical storage media
72.40.+w Photoconduction and photovoltaic effects
82.30.Qt Isomerization and rearrangement
82.50.-m Photochemistry
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